AH1-1 High Dynamic Range Amplifier Product Features 250 – 4000 MHz +41 dBm OIP3 3 dB Noise Figure 13.5 dB Gain +21 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package Single +5 V Supply MTTF > 100 years Applications Mobile Infrastructure CATV / DBS W-LAN / Wi-Bro / WiMAX RFID Defense / Homeland Security Fixed Wireless Product Description The AH1-1 is a high dynamic range amplifier in a lowcost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The AH1-1 is a specially screened version of the AH1 offering a very narrow gain spread from device to device. GND 4 The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85C. The AH1-1 is available in both the standard SOT-89 package and the environmentally-friendly lead-free/green/RoHScompliant SOT-89 package. 1 2 3 RF IN GND RF OUT Function Input Output / Bias Ground The broadband amplifier uses a high reliability GaAs MMIC technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AH1-1 will work for other applications within the 250 to 4000 MHz frequency range such as fixed wireless. Specifications (1) Parameter Functional Diagram Pin No. 1 3 2, 4 Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dB mA V 250 Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure (3) Operating Current Range Supply Voltage 12.9 +37 120 Typ 800 13.3 8 15 +21.7 +41 3 150 5 Max Parameter 4000 Frequency S21 S11 S22 Output P1dB Output IP3 (2) IS-95 Channel Power (5) Noise Figure Supply Voltage Device Current 13.8 180 Units MHz dB dB dB dBm dBm dB dB V mA Typical 900 14.2 -21 -14 +21.7 +42 +15.5 3.2 1900 12.2 -14 -13 +22 +41 +16.5 3.3 5 150 2140 12.0 -21 -11 +22 +40 3.3 1. Test conditions unless otherwise noted: T = 25 ºC, 50 system. 2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Noise figure can be optimized by matching the input for optimal return loss. 4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3. 5. Measured with -45 dBc ACPR, IS-95 9 channels fwd. Not Recommended for New Designs Absolute Maximum Rating Recommended Replacement Part: TQP3M9007 Parameter Rating Operating Case Temperature Storage Temperature Supply Voltage RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth -40 to +85 C -55 to +150 C +6 V +10 dBm +160 C 59 C / W Ordering Information Part No. Description AH1-1G High Dynamic Range Amplifier (lead-free/green/RoHS-compliant SOT-89 Pkg) Standard T/R size = 1000 pieces on a 7” reel. Junction Temperature for >106 hours MTTF Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 1 of 5 May 2012 AH1-1 High Dynamic Range Amplifier Typical Device Data S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25C, unmatched device in a 50 ohm system) Input return loss can be improved with the appropriate input matching network shown later in this datasheet. OIP3 Load Pull Circles 900 MHz IP3=35 IP3=36 IP3=37 IP3=38 IP3=39 IP3=41 VSWR=1.5 VSWR=2 VSWR=3 VSWR=4 VSWR=5 S-Parameters (VD = +5 V, ID = 150 mA, T = 25 C, calibrated to device leads) Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 S11 (dB) -2.65 -7.97 -8.57 -8.47 -8.24 -7.79 -7.18 -6.55 -6.03 -5.69 -5.55 -5.68 -5.86 S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) -29.52 17.80 164.25 -24.29 45.18 -8.25 -44.15 15.28 158.50 -21.31 6.75 -19.01 -60.61 14.91 147.54 -21.11 -3.83 -25.15 -80.72 14.60 134.66 -21.11 -10.90 -29.26 -100.99 14.22 121.38 -21.21 -17.00 -30.76 -120.81 13.80 108.59 -21.21 -23.01 -29.83 -138.15 13.27 96.13 -21.41 -28.54 -29.30 -152.70 12.69 84.26 -21.62 -33.67 -29.12 -164.30 12.11 73.25 -21.83 -38.35 -28.24 -173.54 11.57 62.88 -21.99 -42.48 -26.58 176.22 11.12 52.70 -22.10 -46.41 -25.60 166.67 10.76 42.57 -22.16 -50.57 -26.12 153.06 10.40 31.81 -22.27 -55.21 -29.48 Device S-parameters are available for download off of the website at: http://www.tqs.com S22 (ang) -39.80 -65.37 -69.25 -84.69 -115.12 -88.78 -94.19 -136.07 -112.00 -97.44 -90.19 -87.80 -82.67 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 2 of 5 May 2012 AH1-1 High Dynamic Range Amplifier Application Circuit: 800 – 2500 MHz (AH1-PCB) Vcc = +5 V ID=C5 C=56 pF Typical RF Performance at 25 C Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. Output P1dB Output IP3 (+5 dBm / tone, 10 MHz spacing) IS-95 Channel Power (@-45 dBc ACPR, 9 channels fwd) Noise Figure Device Bias MHz 900 1900 2140 dB 14.2 12.2 12.0 dB -21 -14 -21 dB -14 -13 -11 dBm +21.7 +22 +22 dBm +42 +41 All passive components are of size 0603 unless otherwise noted. Component C1 is shown in the silkscreen but is not used for this configuration. ID=C2 C=56 pF Z0=22 Ohm EL=15.2 Deg F0=0.9 GHz +40 ID=C6 C=56 pF dBm +15.5 +16.5 dB ID=C4 L=12 nH ID=Q1 NET="AH1" ID=C3 L=5.6 nH 3.2 3.3 3.3 +5V @ 150mA Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, 50 Microstrip line details: width = .025”. Gain and Output IP3 vs. Temperature 45 14 44 13 43 12 42 Gain 11 41 Output IP3 (dBm) Gain (dB) Frequency = 800, 801 MHz @ Pout =5dBm 15 OIP3 10 40 -40 -15 10 35 60 85 Temperature (oC) P1dB and Noise Figure vs. Temperature Frequency = 800 MHz 4 22 3 21 2 20 1 P1dB Noise Figure (dB) P1dB (dBm) 23 NF 19 0 -40 -15 10 35 60 85 Temperature (oC) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 3 of 5 May 2012 AH1-1 High Dynamic Range Amplifier 250 - 650 MHz Reference Design Gain / Return Loss 16 250 14.8 -10 -19 450 650 14.5 13.8 -36 -11 -17 -13 +22 +42 2.8 2.8 3.2 +5V @ 150mA 0 DB(|S(1,1)|) (R) +5V DB(|S(2,2)|) (R) C=1000 pF 15 -5 14 -10 13 -15 12 -20 11 S11, S22 (sB) MHz dB dB dB dBm dBm dB Gain (dB) Freq. Gain S11 S22 P1dB OIP3 NF Bias DB(|S(2,1)|) (L) L=82 nH NET="AH1" C=1000 pF L=15 nH -25 0.2 0.3 0.4 0.5 Frequency (GHz) 0.6 0.7 900 MHz Reference Design 800 900 1000 13.7 13.7 13.6 -13 -16 -18 -13 -14 -15 +22 +41 2.5 +5V @ 150mA Gain / Return Loss 15 +5 V 0 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) C=100 pF DB(|S(2,2)|) (R) 14 -5 13 -10 12 -15 11 -20 10 -25 L=100 nH S11, S22 (dB) MHz dB dB dB dBm dBm dB Gain (dB) Freq. ain S11 S22 P1dB OIP3 NF Bias C=100 pF NET="AH1" C=100 pF L=12 nH 0.7 0.8 0.9 Frequency (GHz) 1 1.1 2350 MHz Reference Design 2.3 12.0 -24 -12 2.35 2.4 12.0 11.9 -40 -25 -13 -14 +22 +41 3.7 +5V @ 150mA +5V Gain / Return Loss 13 C=56 pF 0 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) 12 -5 11 -10 10 -15 9 -20 8 S11, S22 (sB) GHz dB dB dB dBm dBm dB Gain (dB) Freq. Gain S11 S22 P1dB OIP3 NF Bias TLINP Z0=50 Ohm L=250 mil Eeff=3.4 Loss=0 F0=0 GHz L=22 nH NET="AH1" C=56 pF C=1.2 pF -25 2.1 2.2 2.3 2.4 Frequency (GHz) 2.5 2.6 3500 MHz Reference Design 3.3 9.8 -10 -16 3.5 3.8 9.9 9.5 -18 -14 -17 -16 +21.6 +41 4.8 4.3 4.1 +5V @ 150mA +5V Gain / Return Loss 11 C=18 pF 0 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) 10 -5 9 -10 8 -15 7 -20 6 S11, S22, (dB) GHz dB dB dB dBm dBm dB Gain (dB) Freq. Gain S11 S22 P1dB OIP3 NF Bias TLINP Z0=80 Ohm L=50 mil Eeff=3.4 Loss=0 F0=0 GHz L=12 nH NET="AH1" C=18 pF C=1 pF -25 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 4 of 5 May 2012 AH1-1 High Dynamic Range Amplifier AH1-1G Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The AH1-1G will be marked with an “AH1G” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. A “1” will be lasermarked in the upper right-hand corner. AH1G 1 XXXX-X ESD / MSL Information Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Standard: Level 1 at +260 C convection reflow JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 5 of 5 May 2012