Common-Drain N-Channel Trench MOSFET 24V, 10A, 11.6mΩ General Description Features The MDCA0338E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. - VDS = 24 V - ID =10 A - Drain-Source ON Resistance; RDS(ON) < 11.6mΩ @ VGS = 4.5V RDS(ON) < 12.6mΩ @ VGS = 4.0V RDS (ON) < 15.0mΩ @ VGS = 3.5V RDS (ON) < 17.5mΩ @ VGS = 3.1V Applications - Portable Battery Protection Module 5(D) 6(D) 7(D) 8(D) 4(G2) 3(S2) 2(G1) 1(S1) SOJ-8 Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Note 1 Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Units VDSS 24 V VGSS ±12 V 10 A 8 A 60 A o TA=25 C Continuous Drain Current Note 1 o TA=70 C Pulse Drain Current Note 2 ID IDM o Power Dissipation for Single Operation Note 1 TA=25 C o TA=70 C Junction and Storage Temperature Range 1.7 PDSM W 1.0 TJ, Tstg -55~150 Symbol Rating Thermal Resistance, Junction-to-Ambient(Steady-State) RθJA 75 Thermal Resistance, Junction-to-Case RθJC 6 o C Thermal Characteristics Characteristics Unit o C/W May 2016. Version 1.0 1 MagnaChip Semiconductor Ltd. MDCA0338E– Common-Drain Dual N-Channel Trench MOSFET 24V MDCA0338E Part Number Temp. Range Package Packing RoHS Status MDCA0338EURH -55~150oC SOJ-8L Tape and Reel Halogen Free Electrical Characteristics (Ta =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 500μA, VGS = 0V 24 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 0.50 1.00 1.50 Drain Cut-Off Current IDSS VDS = 20V, VGS = 0V - - 1.0 μA Gate Leakage Current IGSS VGS = ±8V, VDS = 0V μA Drain-Source Resistance Note 3 Forward Trans conductance RDS(ON) gfs - - ±1.0 VGS = 4.5V, ID = 5A 7.4 9.0 11.6 VGS = 4.0V, ID = 5A 7.7 9.3 12.6 VGS = 3.1V, ID = 5A 8.5 10.2 15.0 VGS = 2.5V, ID = 5A 10.0 11.8 17.5 VDS = 5V, ID = 10A - 33 - - 18 - - 3.7 - - 8.2 - - 1440 - - 340 - V mΩ S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS = 10V, ID = 10A, VGS = 4.5V VDS = 12V, VGS = 0V, f = 1MHz Output Capacitance Coss - 790 - Turn-On Delay Time td(on) - 50 - - 200 - - 1800 - - 2500 - 0.5 0.65 0.9 Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 4.5V, VDS = 10V, ID = 5A, RGEN = 3Ω tf nC pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD IS = 1.0A, VGS = 0V V Notes : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. t=10 μs, Duty cycle ≤1% 3. RDS(ON) is Single MOS. May 2016. Version 1.0 2 MagnaChip Semiconductor Ltd. MDCA0338E– Common-Drain Dual N-Channel Trench MOSFET 24V Ordering Information VGS = 4.5V 3.0V Drain-Source On-Resistance [mOhm] ID, Drain Current [A] 40 50 2.5V 30 20 10 45 40 35 2.5V 30 25 20 15 3.0V 10 VGS = 4.5V 5 0 0 1 2 0 3 0 10 20 30 40 VDS, Drain-Source Voltage [V] 60 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 40 1.6 * Notes : ID = 5A RDS(ON) [mOhm], 1.4 1.2 1.0 0.8 Drain-Source On-Resistance 35 Normalized Drain-Source On-Resistance 50 ID, Drain Current [A] 30 25 20 15 10 5 0 0.6 -50 0 50 100 150 0 2 4 6 8 10 VGS, Gate to Source Volatge [V] TJ, Junction Temperature (،)ة Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage IDR, Reverse Drain Current [A] 20 ID Drain Current [A] 15 o TA=25 C 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 1 0.1 0.0 3.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] VGS, Gate To Source Voltage [V] Fig.5 Transfer Characteristics May 2016. Version 1.0 * Notes : VGS = 0V 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDCA0338E– Common-Drain Dual N-Channel Trench MOSFET 24V 50 MDCA0338E– Common-Drain Dual N-Channel Trench MOSFET 24V 2000 * Note : ID = 10A Coss = Cds + Cgd Crss = Cgd 1500 3 2 1 0 0 5 10 Coss 1000 * Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 500 0 15 0 5 QG, Total Gate Charge [nC] 10 15 20 VDS, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 1 3 10 10 Thermal Response (Normalized) Operation in This Area is Limited by R DS(on) (VGS=4.5V) 2 10 IS, Source Current [A] Ciss = Cgs + Cgd (Cds = shorted) Ciss VDS = 10V Capacitance [pF] VGS, Gate-Source Voltage [V] 4 1 ms 10 ms 1 10 100 ms 1000 ms DC Limited by ID 0 10 -1 10 Single Pulse TJ=Max Rated 0 10 D=0.5 0.2 -1 10 0.1 0.05 0.02 0.01 -2 10 * Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * ZthJA * RthJA(t) + TA single pulse o TA=25 C -2 10 -3 -1 10 0 10 1 10 10 2 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 t1, Rectangular Pulse Duration [sec] VSSSource-Source Voltage [V] Fig.10 Transient Thermal Response Curve Fig.9 Maximum Safe Operating Area May 2016. Version 1.0 -4 10 4 MagnaChip Semiconductor Ltd. MDCA0338E– Common-Drain Dual N-Channel Trench MOSFET 24V Package Dimension SOJ, 8 Leads A A1 A2 b c D E E1 E2 e L θ θ1 May 2016. Version 1.0 Min 0.01 0.925 0.25 0.10 2.95 2.50 2.30 2.65 0.30 0' Magnachip(2928) Nom 1.00 0.32 0.15 3.05 2.40 2.85 0.65BSC 0.45 4' 7' NOM 5 Unit: mm Max 0.10 1.00 0.40 0.20 3.10 3.00 2.50 3.05 0.60 8' MagnaChip Semiconductor Ltd. MDCA0338E– Common-Drain Dual N-Channel Trench MOSFET 24V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May 2016. Version 1.0 6 MagnaChip Semiconductor Ltd.