MOTOROLA BC307B Amplifier transistors(pnp) Datasheet

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by BC307/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
Symbol
BC
307
BC
308C
BC
309
Unit
Collector – Emitter Voltage
VCEO
–45
–25
–25
Vdc
Collector – Base Voltage
VCBO
–50
–30
–30
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
°C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
Rating
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC307
BC308C
BC309B
V(BR)CEO
–45
–25
–25
—
—
—
—
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BC307
BC308C
BC309B
V(BR)EBO
–5.0
–5.0
–5.0
—
—
—
—
—
—
Vdc
BC307
BC308C
BC309B
—
—
—
–0.2
–0.2
–0.2
–15
–15
–15
nAdc
(VCES = –50 V, VBE = 0) TA = 125°C
BC307
—
–0.2
–4.0
µA
(VCES = –30 V, VBE = 0) TA = 125°C
BC308C
BC309B
—
—
–0.2
–0.2
–4.0
–4.0
Collector–Emitter Leakage Current
(VCES = –50 V, VBE = 0)
(VCES = –30 V, VBE = 0)
ICES
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
—
—
150
270
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
hFE
BC307B/309B
BC307C/308C
—
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BC307
BC308C
120
120
—
—
800
800
(IC = –100 mAdc, VCE = –5.0 Vdc)
BC307B/309B
BC307C/308C
200
420
290
500
460
800
BC307B/309B
BC307C/308C
—
—
180
300
—
—
—
—
—
–0.10
–0.30
–0.25
–0.3
–0.6
—
—
—
–0.7
–1.0
—
—
–0.55
–0.62
–0.7
—
—
—
280
320
360
—
—
—
—
—
6.0
—
—
—
—
2.0
2.0
2.0
2.0
4.0
10
10
4.0
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
VBE(on)
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
BC307
BC308C
BC309B
Common Base Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ, f = 1.0 kHz)
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)
Ccbo
MHz
NF
BC309
BC307
BC308C
BC309B
pF
dB
1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.5
–0.9
0.7
0.5
VBE(sat) @ IC/IB = 10
–0.7
VBE(on) @ VCE = –10 V
–0.6
–0.5
–0.4
–0.3
–0.2
0.3
VCE(sat) @ IC/IB = 10
–0.1
0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50 –100
Figure 2. “Saturation” and “On” Voltages
10
400
300
Cib
7.0
200
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
TA = 25°C
–0.8
1.0
0.2
–0.2
VCE = –10 V
TA = 25°C
150
100
80
60
5.0
TA = 25°C
3.0
Cob
2.0
40
30
20
–0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
IC, COLLECTOR CURRENT (mAdc)
1.0
–0.4 –0.6
–50
Figure 3. Current–Gain — Bandwidth Product
0.5
0.3
VCE = –10 V
f = 1.0 kHz
TA = 25°C
0.1
0.05
0.03
0.01
–0.1
–0.2
–0.5
–1.0
–2.0
IC, COLLECTOR CURRENT (mAdc)
–5.0
–1.0
–2.0
–4.0 –6.0 –10
VR, REVERSE VOLTAGE (VOLTS)
–20 –30 –40
Figure 4. Capacitances
r b′, BASE SPREADING RESISTANCE (OHMS)
1.0
hob, OUTPUT ADMITTANCE (OHMS)
–1.0
VCE = –10 V
TA = 25°C
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
–10
Figure 5. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150
140
130
VCE = –10 V
f = 1.0 kHz
TA = 25°C
120
110
100
–0.1
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0
IC, COLLECTOR CURRENT (mAdc)
–5.0
–10
Figure 6. Base Spreading Resistance
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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4
◊
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC307/D
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