AUK BC848U Npn silicon transistor (general purpose application switching application) Datasheet

BC848U
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• High voltage : VCEO=30V
• Complementary pair with BC858U
Ordering Information
Type NO.
Marking
BC848U
Package Code
BS
SOT-323
: hFE rank
Outline Dimensions
unit : mm
2.1±0.1
1.25±0.05
KST-3021-001
0.15±0.05
2
0.30±0.1
3
0~0.1
1.30±0.1
0.90±0.1
2.0±0.2
1
0.1 Min.
PIN Connections
1. Base
2. Emitter
3. Collector
1
BC848U
(Ta=25°°C)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
30
V
Collector-Emitter voltage
VCEO
30
V
Emitter-Base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
(Ta=25°°C)
Electrical Characteristics
Characteristic
Symbol
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
Base-Emitter turn on voltage
VBE(ON)
VCE=5V, IC=2mA
Base-Emitter saturation voltage
VBE(sat)
Collector-Emitter saturation voltage
VCE(sat)
Collector cut-off current
DC current gain
Transition frequency
ICBO
*
hFE
fT
Test Condition
Min. Typ. Max.
Unit
30
-
-
V
550
-
700
mV
IC=100mA, IB=5mA
-
900
-
mV
IC=100mA, IB=5mA
-
-
600
mV
VCB=35V, IE=0
-
-
15
nA
110
-
800
-
VCE=5V, IC=10mA
-
150
-
MHz
VCE=5V, IC=2mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
-
4.5
pF
Noise figure
NF
VCE=5V, IC=200µA,
f=1KHz, Rg=2KΩ
-
-
10
dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-3021-001
2
BC848U
Electrical Characteristic Curves
Fig. 1 PC –Ta
Fig. 3 IC -VCE
Fig. 2 IC -VBE
Fig. 4 hFE -IC
Fig. 5 VCE(sat) -IC
KST-3021-001
3
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