isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX39 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Designed for switching-control amplifiers, power gates, switching regulators, power switching circuits converters, inverters and control circuits. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEX Collector-Emitter Voltage VBE= -1.5V 120 V VCER Collector-Emitter Voltage RBE= 100Ω 110 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 40 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX39 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L =25mH 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A 1.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2.5A 1.6 V Base-Emitter Saturation Voltage IC= 20A ;IB= 2.5A 2.5 V ICEO Collector Cutoff Current VCE= 70V; IB= 0 1.0 mA ICEX Collector Cutoff Current VCE= 120V;VBE= -1.5V VCE= 120V;VBE= -1.5V;TC=125℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 12A ; VCE= 4V 15 hFE-2 DC Current Gain IC= 20A ; VCE= 4V 8 Current-Gain—Bandwidth Product IC= 1A; VCE= 15V 8 VBE(sat) fT CONDITIONS MIN B TYP. MAX UNIT 45 MHz Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 20A ;IB1= 2.5A; VCC= 30V 1.5 μs 1.0 μs 0.3 μs IC= 20A ;IB1= -IB2= 2.5A; VCC= 30V isc Website：www.iscsemi.cn