MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MPSW01 MPSW01A MPSW01 MPSW01A Emitter −Base Voltage VCEO VCBO Value Unit Vdc 30 40 Vdc 40 50 VEBO 5.0 Vdc Collector Current − Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 1 EMITTER TO−92 (TO−226AE) CASE 29−10 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM MPS W01x AYWW G G x = 01A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 5 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MPSW01/D MPSW01, MPSW01A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 40 − − 40 50 − − 5.0 − − − 0.1 0.1 − 0.1 55 60 50 − − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) MPSW01 MPSW01A Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPSW01 MPSW01A V(BR)CEO V(BR)CBO V(BR)EBO Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) MPSW01 MPSW01A Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) − Collector −Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) − 0.5 Vdc Base−Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc fT 50 − MHz Cobo − 20 pF SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device MPSW01 Package Shipping† TO−92 5000 Units / Bulk MPSW01G TO−92 (Pb−Free) 5000 Units / Bulk MPSW01AG TO−92 (Pb−Free) 5000 Units / Bulk MPSW01ARLRAG TO−92 (Pb−Free) 2000 / Tape & Reel MPSW01ARLRPG TO−92 (Pb−Free) 2000 / Tape & Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) 300 h FE , CURRENT GAIN 200 100 70 VCE = 1.0 V TJ = 25°C 50 30 10 20 50 200 100 IC, COLLECTOR CURRENT (mA) 500 1000 Figure 1. DC Current Gain TJ = 25°C 0.8 0.6 IC = 1000 mA 0.4 0.2 IC = 10 mA IC = 50 mA IC = IC = 500 mA IC = 250 mA 100 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (mA) 10 20 Figure 2. Collector Saturation Region http://onsemi.com 2 50 100 1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) qVB , TEMPERATURE COEFFICIENT (mV/° C) MPSW01, MPSW01A VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 5.0 10 20 -1.2 -1.6 qVB FOR VBE -2.0 -2.4 -2.8 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient 80 300 TJ = 25°C 200 70 VCE = 10 V TJ = 25°C f = 20 MHz 50 60 C, CAPACITANCE (pF) 100 40 Cibo 20 Cobo 0 30 10 20 50 200 100 1000 Cobo Cibo IC, COLLECTOR CURRENT (mA) 5.0 1.0 10 2.0 Figure 6. Capacitance 1k 1.0 ms 100 ms 1.0 s 500 200 TA = 25°C 100 TC = 25°C DUTY CYCLE ≤ 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 50 20 10 1.0 MPSW01 MPSW01A 2.0 5.0 15 3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current Gain — Bandwidth Product IC , COLLECTOR CURRENT (mA) f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 1.0 2.0 -0.8 10 20 30 40 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 20 4.0 25 5.0 MPSW01, MPSW01A PACKAGE DIMENSIONS TO−92 (TO−226AE) CASE 29−10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P F SEATING PLANE L K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X−X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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