To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET RY FL14KM-10A INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀➁➂ 10V DRIVE ● VDSS ................................................................................ 500V ● rDS (ON) (MAX) .............................................................. 0.64Ω ● ID ......................................................................................... 14A ● Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ● ➀ ➂ TO-220FN APPLICATION Inverter type fluorescent light sets, SMPS MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter Ratings Unit 500 ±30 V V 14 42 A A 14 40 A W Channel temperature –55 ~ +150 °C Storage temperature Isolation voltage AC for 1minute, Terminal to case –55 ~ +150 2000 °C V Weight Typical value 2.0 g VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA PD Avalanche current (Pulsed) Maximum power dissipation Tch Tstg Viso — Conditions VGS = 0V VDS = 0V L = 200µH Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL14KM-10A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) Drain-source on-state resistance ID = 7A, VGS = 10V Drain-source on-state voltage ID = 7A, VGS = 10V y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions Unit Min. Typ. Max. 500 ±30 — — — — V V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V — — — — ±10 1.0 µA mA ID = 1mA, VDS = 10V 2.0 3.0 4.0 V — — 0.50 3.5 0.64 4.5 Ω V ID = 7A, VDS = 10V — — 10.0 1500 — — S pF VDS = 25V, VGS = 0V, f = 1MHz — — 180 60 — — pF pF — — 30 60 — — ns ns — 250 — ns IS = 7A, VGS = 0V — — 115 1.5 — 2.0 ns V Channel to case — — 3.13 °C/W VDD = 200V, ID = 7A, VGS = 10V, R GEN = RGS = 50Ω PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 7 5 40 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 30 20 10 0 3 2 101 100µs 7 5 3 2 1ms 100 10ms 7 5 Tc = 25°C Single Pulse 3 2 0 50 100 150 DC 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 20 50 DRAIN CURRENT ID (A) 40 VGS = 20V 30 Tc = 25°C VGS = 20V Pulse Test Tc = 25°C Pulse Test PD = 40W DRAIN CURRENT ID (A) tw = 10µs 10V 20 6V 10 5V 16 10V 6V 12 PD = 40W 8 5V 4 4V 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL14KM-10A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 30 ID = 25A 20 14A 10 7A 0 0 4 8 12 16 Tc = 25°C Pulse Test 0.8 VGS = 10V 0.6 20V 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 50 102 Tc = 25°C VDS = 50V Pulse Test 40 VDS = 10V Pulse Test 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 1.0 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 30 20 10 3 2 Tc = 25°C 101 7 5 3 2 75°C 125°C 0 4 12 16 5 7 101 2 3 5 7 102 SWITCHING CHARACTERISTICS (TYPICAL) 5 4 3 Ciss Coss 102 7 5 3 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 101 2 DRAIN CURRENT ID (A) 103 7 5 3 2 100 0 10 20 GATE-SOURCE VOLTAGE VGS (V) 7 5 3 2 CAPACITANCE Ciss, Coss, Crss (pF) 8 Tch = 25°C f = 1MHZ VGS = 0V Crss 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 0 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) 2 tf 102 7 tr 5 4 3 td(on) 2 101 7 5 100 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL14KM-10A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 50 Tch = 25°C ID = 14A VDS = 100V 16 SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 200V 12 400V 8 4 0 0 20 40 60 80 100 40 TC = 125°C 30 25°C 20 VGS = 0V Pulse Test 10 0 120 0 0.4 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 1.6 2.0 10 100 7 5 4 3 2 –50 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VGS = 10V ID = 7A Pulse Test 2 0 50 100 8 6 4 2 0 150 –50 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1.0 0.8 0.6 VGS = 0V ID = 1mA –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) 0.4 1.2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 101 10–1 0.8 SOURCE-DRAIN VOLTAGE VSD (V) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) GATE CHARGE Qg (nC) 7 5 4 3 75°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 Duty = 1.0 3 2 0.5 100 0.2 7 5 0.1 3 2 0.05 0.02 PDM 10–1 7 5 3 2 tw 0.01 T D= tw T Single Pulse 10–2 –4 10 2 3 5 7 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Aug. 1999