CHA6250-QFG 5.5-9GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6250-QFG is a three stages monolithic GaAs high power circuit that produces more than 2 Watt output power. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features Output power at 1dB comp. ■ Broadband performances: 5.5- 9GHz ■ 23.5dB Linear Gain ■ 33.5dBm output power @1dB comp. ■ 43dBm output TOI ■ 29% PAE@ 1dB compression ■ DC bias: Vd=7Volt@Id=0.9A ■ 32L-QFN5x5 36 35 Output P1dB (dB) 34 33 32 31 Temp=25°C Temp=-40°C 30 Temp=+85°C 29 28 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power @1dB comp. Ref. : DSCHA6250-QFG2272 - 28 Sep 12 Min 5.5 Typ Max 9.0 23.5 43.0 33.5 1/14 Unit GHz dB dBm dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +7.0V Symbol Parameter Freq Frequency range Gain Linear Gain G_T Linear Gain variation versus Temperature RL_in Input Return Loss RL_out Output Return Loss OP1dB Output power @1dB comp. [5.5 - 6.8GHz] Output power @1dB comp. [6.8 - 9GHz] Psat Saturated output power OTOI Output TOI PAE Power Added Efficiency @ 1dB compression Idq Quiescent Drain current Vg Gate voltage These values are representative of onboard measurements paragraph "Evaluation mother board". Min 5.5 21 Typ Max 9 27 Unit GHz 23.5 dB -0.03 dB/°C -18 dB -14 dB 32.5 33.5 dBm 31.5 32.5 dBm 34.5 dBm 43 dBm 29 % 900 1000 mA -0.5 V as defined on the drawing in Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 7.5V V Idq Drain bias current 1.06 A Vg Gate bias voltage -2 to +0 V Pin Input continuous power 15 dBm (2) Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25°C Symbol Pad No VD1 30 VD2 28 VD3 25 VG 13 Parameter DC Drain voltage 1st stage DC Drain voltage 2nd stage DC Drain voltage 3rd stage DC Gate voltage tuned for Idq= 0.9A Ref. : DSCHA6250-QFG2272 - 28 Sep 12 2/14 Values 7 7 7 -0.5 Unit V V V V Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). DEVICE THERMAL SPECIFICATION : CHA6250-QFG Recommended max. junction temperature (Tj max) : 169 Junction temperature absolute maximum rating : 175 Max. continuous dissipated power (Pdiss. Max.) : 6.3 => Pdiss. Max. derating above Tcase(1)= 85 °C : 75 Junction-Case thermal resistance (Rth J-C)(2) : <13 Minimum Tcase operating temperature(3) : -40 Maximum Tcase operating temperature(3) : 85 Minimum storage temperature : -55 Maximum storage temperature : 150 °C °C W mW/°C °C/W °C °C °C °C (1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased. (3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 7 5 4 3 2 1 Pdiss. Max. @Tj <Tj max (W) 0 -50 -25 0 25 50 75 100 125 150 175 Pdiss. Max. @Tj <Tj max (W) 6 Tcase Example: QFN 16L 3x3 Location of temperature reference point (Tcase) on package's bottom side Tcase (°C) 6.4 Ref. : DSCHA6250-QFG2272 - 28 Sep 12 3/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +7.0V, Idq = 900mA Measurement in the plan of the connectors, using the proposed land pattern & board, as defined in paragraph “Evaluation mother board” 30 5 25 0 20 -5 15 -10 10 -15 5 -20 0 -25 Linear Gain RL_in RL_out -5 Return Loss (dB) Linear Gain (dB) Linear Gain & Return Loss -30 -10 -35 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 Frequency (GHz) Linear Gain versus temperature 30 Linear Gain (dB) 25 20 15 Temp=25°C 10 Temp=-40°C Temp=+85°C 5 0 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 Frequency (GHz) 1- Ref. : DSCHA6250-QFG2272 - 28 Sep 12 4/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +7.0V, Idq = 900mA Measurement in the QFN access plans, using the proposed land pattern & board, as defined in paragraph “Evaluation mother board” Output power at 1 dB Compression 36 35 Output P1dB (dB) 34 33 32 31 Temp=25°C Temp=-40°C 30 Temp=+85°C 29 28 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 9.5 10 Frequency (GHz) Power Added Efficiency at 1 dB Compression 40 35 PAE (%) 30 25 Temp=25°C 20 Temp=-40°C Temp=+85°C 15 10 5 5.5 6 6.5 7 7.5 8 8.5 9 Frequency (GHz) 2- Ref. : DSCHA6250-QFG2272 - 28 Sep 12 5/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +7.0V, Idq = 900mA Drain current at 1 dB Compression 1.8 1.6 1.4 Id (A) 1.2 1 0.8 0.6 Temp=25°C Temp=-40°C 0.4 Temp=+85°C 0.2 0 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 Frequency (GHz) Output TOI (dBm) at two Pout/Tone 48 47 Output TOI (dBm) 46 45 44 43 42 Pout/Tone=14.5 dBm 41 Pout/Tone=20.5 dBm 40 39 6 6.5 7 7.5 8 8.5 9 Frequency (GHz) 3- Ref. : DSCHA6250-QFG2272 - 28 Sep 12 6/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +7.0V, Idq = 900mA Output C/I3 (dBc) versus Pout / 2 Tones 80 Freq=6 GHz Freq=7 GHz Freq=8 GHz Freq=9 GHz 75 70 C/I3 (dBc) 65 60 55 50 45 40 35 10 12 14 16 18 20 22 24 26 28 Pout/2Tones (dBm) 4- Ref. : DSCHA6250-QFG2272 - 28 Sep 12 7/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Typical Board Measurements Tamb.= +25°C Linear gain vs Vd at 0.9A Linear gain vs Vd at 1A 30 28 24 Linear Gain (dB) Linear Gain (dB) 26 22 20 18 16 14 5V 12 6V 7V 10 5 6 7 8 9 30 28 26 24 22 20 18 16 14 12 10 5V 5 10 6 7 Frequency (GHz) Output P1dB (dBm) 5 6V 6 7 7V 8 9 36 35 34 33 32 31 30 29 28 27 26 25 10 5V 5 6 6.5 7 7.5 Output TOI (dBm) Output TOI (dBm) 10 9 10 7V 8 Output TOI at Pout/ Tone= 13dBm 7V- 0.9A 6V- 0.9A 5V- 1A 6 9 Frequency (GHz) Output TOI at Pout/ Tone= 7dBm 5.5 6V 7 Frequency (GHz) 50 48 46 44 42 40 38 36 34 32 30 8 Power at 1dB vs Vd at 1A Output P1dB (dBm) 5V 7V Frequency (GHz) Power at 1dB vs Vd at 0.9A 36 35 34 33 32 31 30 29 28 27 26 25 6V 8 8.5 9 9.5 50 48 46 44 42 40 38 36 34 32 30 7V- 0.9A 6V- 0.9A 5V- 1A 5.5 6 6.5 Frequency (GHz) 7 7.5 8 8.5 9 9.5 Frequency (GHz) Output TOI (dBm) Output TOI at Pout/ Tone= 19dBm 50 48 46 44 42 40 38 36 34 32 30 7V- 0.9A 6V- 0.9A 5V- 1A 5.5 6 6.5 7 7.5 8 8.5 9 9.5 Frequency (GHz) Ref. : DSCHA6250-QFG2272 - 28 Sep 12 8/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Package outline (1) Matt tin, Lead Free Units : From the standard : (Green) mm JEDEC MO-220 (VGGD) 33- GND 1234567891011- Nc Nc Gnd(2) RF IN Gnd(2) Nc Nc Nc Nc Nc Nc 1213141516171819202122- Gnd(2) VG Nc Nc Nc Nc Nc Nc Gnd(2) RF OUT Gnd(2) 23242526272829303132- Nc Nc VD3 Gnd(2) Nc VD2 Gnd(2) VD1 Nc Nc (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA6250-QFG2272 - 28 Sep 12 9/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Evaluation mother board ■ Compatible with the proposed footprint. ■ Based on typically Ro4003 / 8mils or equivalent. ■ Using a micro-strip to coplanar transition to access the package. ■ Recommended for the implementation of this product on a module board. Module should be designed to dissipate around 6.3W ■ First decoupling network is done with 100pF capacitors, second decoupling network is done with 10nF capacitors. ■ See application note AN0017 for details. Ref. : DSCHA6250-QFG2272 - 28 Sep 12 10/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Notes Due to ESD protection circuits on RF input, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF access. 30 28 25 VD1 VD2 VD3 RF IN RF OUT 4 21 VG 13 The DC connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling (100pF & 10nF) on the PC board, as close as possible to the package. Ref. : DSCHA6250-QFG2272 - 28 Sep 12 11/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier DC Schematic 7V, 900mA VD1 VD2 VD3 520 mA 255 mA 125 mA RF OUT RF IN 15 VG # -0.5 V 100 Ref. : DSCHA6250-QFG2272 - 28 Sep 12 50 12/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Note Ref. : DSCHA6250-QFG2272 - 28 Sep 12 13/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6250-QFG 5.5-9GHz Power Amplifier Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 5x5 RoHS compliant package: CHA6250-QFG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA6250-QFG2272 - 28 Sep 12 14/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34