HANBit HMN1M8DV Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin – DIP, 3.3V Part No. HMN1M8DV GENERAL DESCRIPTION The HMN1M8DV Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMN1M8DV uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM. FEATURES w Access time : 70, 85, 120, 150 ns PIN ASSIGNMENT w High-density design : 8Mbit Design w Battery internally isolated until power is applied w Industry-standard 36-pin 1,024K x 8 pinout NC NC A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS w Unlimited write cycles w Data retention in the absence of VCC w 10-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Data is automatically protected during power loss OPTIONS MARKING w Timing 70 ns - 70 85 ns - 85 120 ns -100 150 ns -150 URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 VCC A19 NC A15 A17 /WE A13 A8 A9 A11 /OE A10 /CE DQ7 DQ6 DQ5 DQ4 DQ3 36-pin Encapsulated Package 1 HANBit Electronics Co.,Ltd HANBit HMN1M8DV FUNCTIONAL DESCRIPTION The HMN1M8DV executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by the address inputs(A0-A19) defines which of the 1,048,576 bytes of data is accessed. Valid data will be available to the eight data output drivers within tACC (access time) after the last address input signal is stable. When power is valid, the HMN1M8DV operates as a standard CMOS SRAM. During power-down and power-up cycles, the HMN1M8DV acts as a nonvolatile memory, automatically protecting and preserving the memory contents. The HMN1M8DV is in the write mode whenever the /WE and /CE signals are in the active (low) state after address inputs are stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle. /WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The /OE control signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled (/CE and /OE active) then /WE will disable the outputs in tODW from its falling edge. The HMN1M8DV provides full functional capability for Vcc greater than 3.0 V and write protects by 2.8 V nominal. Powerdown/power-up control circuitry constantly monitors the Vcc supply for a power-fail-detect threshold VPFD. When VCC falls below the VPFD threshold, the SRAM automatically write-protects the data. All inputs to the RAM become “don’t care” and all outputs are high impedance. As Vcc falls below approximately 2.5V, the power switching circuit connects the lithium energy soure to RAM to retain data. During power-up, when Vcc rises above approximately 2.5 volts, the power switching circuit connects external Vcc to the RAM and disconnects the lithium energy source. Normal RAM operation can resume after Vcc exceeds 3.0 volts. BLOCK DIAGRAM /OE /WE PIN DESCRIPTION A19 /CE : Chip Enable DQ0-DQ7 VSS : Ground DQ0-DQ7 : Data In / Data Out Power /CE A0-A19 : Address Input A0-A19 2 x 512K x 8 SRAM Block /CE CON Power – Fail Control /WE : Write Enable VCC /OE : Output Enable VCC: Power (+5V) Lithium Cell URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) NC : No Connection 2 HANBit Electronics Co.,Ltd HANBit HMN1M8DV TRUTH TABLE MODE /OE /CE /WE I/O OPERATION POWER Not selected X Output disable H H X High Z Standby L H High Z Active Read L L H DOUT Active Write X L L DIN Active ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VCC -0.5V to Vcc+0.5 VT -0.3V to 4.6V Operating temperature TOPR 0 to 70°C Storage temperature TSTG -65°C to 150°C TSOLDER 260°C DC voltage applied on VCC relative to VSS DC Voltage applied on any pin excluding VCC relative to VSS Soldering temperature CONDITIONS VT≤ VCC+0.3 For 10 second NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. RECOMMENDED DC OPERATING CONDITIONS ( TA= TOPR ) PARAMETER SYMBOL MIN TYPICAL MAX Supply Voltage VCC 3.0V 3.3V 3.6V Ground VSS 0 0 0 Input high voltage VIH 2.2 - VCC+0.3 Input low voltage VIL -0.3 - 0.6V NOTE: Typical values indicate operation at TA = 25℃ CAPACITANCE (TA=25℃ , f=1MHz, VCC=3.3V) DESCRIPTION Input Capacitance Input/Output Capacitance CONDITIONS SYMBOL MAX MIN UNIT Input voltage = 0V CIN 8 - pF Output voltage = 0V CI/O 10 - pF 1. Only sampled, not 100% tested URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) 3 HANBit Electronics Co.,Ltd HANBit HMN1M8DV DC ELECTRICAL CHARACTERISTICS (TA= TOPR, VCCmin £ VCC≤ VCCmax ) PARAMETER CONDITIONS Input Leakage Current VIN=VSS to VCC Output Leakage Current /CE=VIH or /OE=VIH or /WE=VIL SYMBOL MIN TYP. MAX UNIT ILI - - ± 3.0 mA ILO - - ± 3.0 mA Output high voltage IOH=-1.0mA VOH 2.4 - - V Output low voltage IOL= 2.0mA VOL - - 0.4 V VPFD 2.8 2.9 3.0 V ISB - - 0.6 ㎃ ISB1 - - 30 mA ICC - 12 ㎃ VSO - - V Threshold Power-fail Deselect Voltage Select Voltage (THS = VSS ) Standby supply current /CE=2.2v /CE≥ VCC-0.2V, 0V≤ VIN≤ 0.2V, Standby supply current or VIN≥ VCC-0.2V Operating Power supply current /CE=VIL, II/O=0㎃ , VIN = VIL or VIH, Read Supply switch-over voltage 2.5 CHARACTERISTICS (Test Conditions) +5V PARAMETER Input pulse levels VALUE 0.4 to 2.2V Input rise and fall times 5 ns Input and output timing reference levels 5V ( unless otherwise specified) 1) Output load (CL =30pF+1TTL) 1) (CL =100pF+1TTL) +5V See Figures 1.9KΩ DOUT 100㎊ 1KΩ 1.9KΩ DOUT 5㎊ 1KΩ Figure 1. Figure 2. Output Load A Output Load B Note : Including scope and jig capacitance URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) 4 HANBit Electronics Co.,Ltd HANBit HMN1M8DV READ CYCLE (TA= TOPR, VCCmin £ VCC≤ VCCmax ) PARAMETER SYMBOL Read Cycle Time tRC Address Access Time tACC Chip enable access time Output enable to Output valid CONDITIONS -70 -85 -120 -150 UNIT MIN MAX MIN MAX MIN MAX MIN MAX 70 - 85 - 120 - 150 - ns Output load A - 70 - 85 - 120 - 150 ns tACE Output load A - 70 - 85 - 120 - 150 ns tOE Output load A - 35 - 45 - 60 - 70 ns Chip enable to output in low Z tCLZ Output load B 5 - 5 - 5 - 10 - ns Output enable to output in low Z tOLZ Output load B 5 - 0 - 0 - 5 - ns Chip disable to output in high Z tCHZ Output load B 0 25 0 35 0 45 0 60 ns Output disable to output high Z tOHZ Output load B 0 25 0 25 0 35 0 50 ns Output hold from address change tOH Output load A 10 - 10 - 10 - 10 - ns WRITE CYCLE (TA= TOPR, Vccmin £ Vcc ≤ Vccmax ) PARAMETER SYMBOL Write Cycle Time tWC Chip enable to end of write tCW Address setup time CONDITIONS -70 -85 -120 -150 UNI MIN MAX MIN MAX MIN MAX Min Max T 70 - 85 - 120 - 150 - ns Note 1 65 - 75 - 100 - 100 - ns tAS Note 2 0 - 0 - 0 - 0 - ns Address valid to end of write tAW Note 1 65 - 75 - 100 - 90 - ns Write pulse width tWP Note 1 55 - 65 - 85 - 90 - ns Write recovery time (write cycle 1) tWR1 Note 3 5 - 5 - 5 - 5 - ns Write recovery time (write cycle 2) tWR2 Note 3 15 - 15 - 15 - 15 - ns Data valid to end of write tDW 30 - 35 - 45 - 50 - ns Data hold time (write cycle 1) tDH1 Note 4 0 - 0 - 0 - 0 - ns Data hold time (write cycle 2) tDH2 Note 4 10 - 10 - 10 - 0 - ns Write enabled to output in high Z tWZ Note 5 0 25 0 30 0 40 0 50 ns Output active from end of write tOW Note 5 5 - 0 - 0 - 5 - ns NOTE: 1. A write ends at the earlier transition of /CE going high and /WE going high. 2. A write occurs during the overlap of allow /CE and a low /WE. A write begins at the later transition of /CE going low and /WE going low. 3. Either tWR1 or tWR2 must be met. 4. Either tDH1 or tDH2 must be met. 5. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain in highimpedance state. URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) 5 HANBit Electronics Co.,Ltd HANBit HMN1M8DV POWER-DOWN/POWER-UP CYCLE PARAMETER SYMBOL CONDITIONS MIN TYP. MAX UNIT VPFD(max) to VPFD(min) VCC Fail Time tF 300 - - ms VPFD(max) to VSS VCC Fail Time tFB 150 - - ms VPFD(max) to VPFD(min) VCC Rise Time tR 10 - - ms 250 ms Delay after Vcc slews down Write Protect Time tWPT past VPFD before SRAM is 40 Write-protected. Chip Enable Recovery tCER 40 - 120 ms VSS to VPFD (min) VCC Rise Time tRB 1 - - ms TIMING WAVEFORM - READ CYCLE NO.1 (Address Access)*1,2 tRC Address tACC tOH Previous Data Valid DOUT Data Valid - READ CYCLE NO.2 (/CE Access)*1,3,4 tRC /CE tACE tCHZ tCLZ DOUT High-Z URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) High-Z 6 HANBit Electronics Co.,Ltd HANBit HMN1M8DV - READ CYCLE NO.3 (/OE Access)*1,5 tRC Address tACC /OE tOE DOUT tOHZ tOLZ Data Valid High-Z High-Z NOTES: 1. /WE is held high for a read cycle. 2. Device is continuously selected: /CE = /OE =VIL. 3. Address is valid prior to or coincident with /CE transition low. 4. /OE = VIL. 5. Device is continuously selected: /CE = VIL - WRITE CYCLE NO.1 (/WE-Controlled)*1,2,3 tWC Address tAW tWR1 tCW /CE tAS tWP /WE tDW DIN Data-in Valid tWZ DOUT Data Undefined (1) URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) tDH1 7 tOW High-Z HANBit Electronics Co.,Ltd HANBit HMN1M8DV - WRITE CYCLE NO.2 (/CE-Controlled)*1,2,3,4,5 Address tAW tAS tWR2 tCW /CE tWP /WE tDH2 tDW Data-in DIN tWZ DOUT Data NOTE: High-Z Undefined 1. /CE or /WE must be high during address transition. 2. Because I/O may be active (/OE low) during this period, data input signals of opposite polarity to the outputs must not be applied. 3. If /OE is high, the I/O pins remain in a state of high impedance. 4. Either tWR1 or tWR2 must be met. 5. Either tDH1 or tDH2 must be met. POWER-DOWN/POWER-UP TIMING VCC tPF 4.75 VPFD VPFD 4.25 VSO VSO tFS tPU tCER tDR tWPT /CE URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) 8 HANBit Electronics Co.,Ltd HANBit HMN1M8DV PACKAGE DIMENSION Dimension Min Max A 2.070 2.100 B 0.710 0.740 C 0.365 0.375 D 0.015 - E 0.008 0.013 F 0.590 0.630 G 0.017 0.023 H 0.090 0.110 I 0.080 0.110 J 0.120 0.150 J A H I G C D B E F All dimensions are in inches. ODERING INFORMATION H M N 1 M 8 DV – 70 I Operating Temperature : I = Industrial Temp. (-40~85 °C ) Blank = Commercial Temp. (0~70°C) Speed options : 70 = 70 ns 85 = 85ns 120 = 120ns 150 = 150ns 3.3V Dip type package Device : 1,024K x 8 bit Nonvolatile SRAM HANBit Memory Module URL:www.hbe.co.kr Rev.0.0 (FEBRUARY/ 2002) 9 HANBit Electronics Co.,Ltd