Sirectifier MUR15120 Ultra fast recovery diode Datasheet

MUR15120
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MUR15120
VRSM
V
1200
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
TVJ=TVJM
TC=100oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
25
15
150
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
75
80
65
70
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
28
27
21
20
A2s
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
P1
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Unit
TVJ=150oC
Weight
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
1200
Dim.
o
C
78
W
0.4...0.6
Nm
2
g
W\SLFDO
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
MUR15120
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
250
150
4
uA
uA
mA
VF
IF=15A; TVJ=150oC
TVJ=25oC
2.2
2.6
V
VTO
For power-loss calculations only
1.65
V
TVJ=TVJM
46.2
rT
RthJC
RthCK
RthJA
0.5
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
trr
o
_
VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH;
TVJ=100 C
IRM
FEATURES
* International standard package
JEDEC TO-220AC
* Glass passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
P2
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
1.6
60
m
K/W
50
70
ns
6.5
7.2
A
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
MUR15120
Ultra Fast Recovery Diodes
IF
30
3.0
A
µC
25
2.5
20
Qr
TVJ=25°C
TVJ=100°C
TVJ=150°C
15
1.5
1.0
5
0.5
0
0
1
2
VF
3
V
0.0
4
Fig. 1 Forward current
versus voltage drop.
IRM
15
10
max.
10
-diF/dt
1.0
1.2
0.8
1.0
IRM
0.8
0.6
trr
IF=11A
IF=22A
IF=11A
IF=5.5A
max.
0.6
0.4
QR
0.2
0.2
40
TJ
80
120 °C 160
Fig. 4 Dynamic parameters versus
junction temperature.
0.0
100
200
-diF/dt
0
100
200
-diF/dt
300 A/µs 400
Fig. 5 Recovery time versus -diF/dt.
300
A/µs
400
Fig. 3 Peak reverse current versus
-diF/dt.
VFR
60
V
1200
50
1000
ns
VFR
40
800
30
600
tfr
10
typ.
0
0
20
0.4
0.0
0
100 A/µs 1000
TVJ=100°C
VR=540V
µs
typ.
5
typ.
1
max.
IF=11A
IF=22A
IF=11A
IF=5.5A
20
Fig. 2 Recovery charge versus -diF/dt.
1.4
Kf
TVJ=100°C
A V =540V
R
25
IF=11A
IF=22A
IF=11A
IF=5.5A
2.0
10
30
TVJ=100°C
VR= 540V
0
400
TVJ=125°C
IF=11A
0
100
200
diF/dt
200
300 A/µs 400
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
P3
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
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