MUR15120 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode MUR15120 VRSM V 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 25 15 150 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 75 80 65 70 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 28 27 21 20 A2s TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque P1 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Unit TVJ=150oC Weight A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Maximum Ratings TVJ=45oC I2t VRRM V 1200 Dim. o C 78 W 0.4...0.6 Nm 2 g W\SLFDO ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR15120 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 250 150 4 uA uA mA VF IF=15A; TVJ=150oC TVJ=25oC 2.2 2.6 V VTO For power-loss calculations only 1.65 V TVJ=TVJM 46.2 rT RthJC RthCK RthJA 0.5 IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC trr o _ VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C IRM FEATURES * International standard package JEDEC TO-220AC * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders 1.6 60 m K/W 50 70 ns 6.5 7.2 A ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR15120 Ultra Fast Recovery Diodes IF 30 3.0 A µC 25 2.5 20 Qr TVJ=25°C TVJ=100°C TVJ=150°C 15 1.5 1.0 5 0.5 0 0 1 2 VF 3 V 0.0 4 Fig. 1 Forward current versus voltage drop. IRM 15 10 max. 10 -diF/dt 1.0 1.2 0.8 1.0 IRM 0.8 0.6 trr IF=11A IF=22A IF=11A IF=5.5A max. 0.6 0.4 QR 0.2 0.2 40 TJ 80 120 °C 160 Fig. 4 Dynamic parameters versus junction temperature. 0.0 100 200 -diF/dt 0 100 200 -diF/dt 300 A/µs 400 Fig. 5 Recovery time versus -diF/dt. 300 A/µs 400 Fig. 3 Peak reverse current versus -diF/dt. VFR 60 V 1200 50 1000 ns VFR 40 800 30 600 tfr 10 typ. 0 0 20 0.4 0.0 0 100 A/µs 1000 TVJ=100°C VR=540V µs typ. 5 typ. 1 max. IF=11A IF=22A IF=11A IF=5.5A 20 Fig. 2 Recovery charge versus -diF/dt. 1.4 Kf TVJ=100°C A V =540V R 25 IF=11A IF=22A IF=11A IF=5.5A 2.0 10 30 TVJ=100°C VR= 540V 0 400 TVJ=125°C IF=11A 0 100 200 diF/dt 200 300 A/µs 400 Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. P3 ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved tfr www.sirectifier.com 0