BULK128 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 1 2 3 SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage o (I C = 0, I B = 2 A, t p < 10µs, T j < 150 C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature November 2001 Value 700 400 V (BR)EBO Unit V V V 4 8 2 4 55 -65 to 150 150 A A A A W o C o C 1/7 BULK128 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 2.27 80 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)EBO Parameter V CE = 700 V V CE = 700 V Emitter-Base Breakdown Voltage (I C = 0) I E = 10 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Test Conditions Collector Cut-off Current (V BE = -1.5 V) I C = 100 mA Collector Cut-Off Current (I B = 0) V CE = 400 V Collector-Emitter Saturation Voltage IC IC IC IC = = = = Typ. T C = 125 o C 9 L = 25 mH IB IB IB IB = = = = 0.1 A 0.2 A 0.5 A 1A I B = 0.1 A I B = 0.2 A I B = 0.5 A DC Current Gain I C = 10 mA IC = 2 A V CE = 5 V V CE = 5 V 10 14 1.5 RESISTIVE LOAD Storage Time Fall Time V CC = 125 V I B1 = 0.4 A T p = 30 µs IC = 2 A I B2 = -0.4 A (see fig.2) ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V clamp = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig.1) Unit 50 500 µA µA 18 V V 250 µA 0.7 1 1.5 V V V V 1.1 1.2 1.3 V V V 0.5 I C = 0.5 A IC = 1 A I C = 2.5 A ts tf Max. 400 Base-Emitter Saturation Voltage ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/7 0.5 A 1A 2.5 A 4A Min. 28 0.2 3 0.4 µs µs 0.6 0.1 1 0.2 µs µs BULK128 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULK128 Inductive Load Fall Time Inductive Load Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULK128 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULK128 SOT-82 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.444 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.04 0.106 c1 1.0 1.3 0.039 0.05 D 15.4 16 0.606 0.629 e e3 2.2 0.087 4.15 4.65 F 0.163 0.183 3.8 0.150 H 2.54 H2 0.100 2.15 0.084 C B F A D H H2 c1 b e b1 e3 6/7 P032A BULK128 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7