DDTC (R2-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · SOT-523 Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistor, R2 only A C B C TOP VIEW Mechanical Data · · · · · · · · P/N E B Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Diagrams & Page 2) Weight: 0.002 grams (approx.) Ordering Information (See Page 2) R2 (NOM) MARKING 10KW 22KW 47KW 100KW N26 N27 N28 N29 DDTC114GE DDTC124GE DDTC144GE DDTC115GE G H K M N J D L C Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0° 8° ¾ All Dimensions in mm B R2 E SCHEMATIC DIAGRAM Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC (Max) 100 mA Power Dissipation Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: 1. Mounted on FR4 PC Board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30316 Rev. 3 - 1 1 of 3 DDTC (R2-ONLY SERIES) E NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO 50 ¾ ¾ V IC = 50mA Collector-Emitter Breakdown Voltage BVCEO 50 ¾ ¾ V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 5 ¾ ¾ V IE = 720mA, DDTC114GE IE = 330mA, DDTC124GE IE = 160mA, DDTC144GE IE = 72mA, DDTC115GE ICBO ¾ ¾ 0.5 mA VCB = 50V IEBO 300 140 65 30 ¾ 580 260 130 58 mA VEB = 4V VCE(sat) ¾ ¾ 0.3 V IC = 10mA, IB = 0.5mA hFE 30 56 68 82 ¾ ¾ ¾ IC = 5mA, VCE = 5V DR2 -30 ¾ +30 % Collector Cutoff Current DDTC114GE DDTC124GE DDTC144GE DDTC115GE Emitter Cutoff Current Collector-Emitter Saturation Voltage DDTC114GE DDTC124GE DDTC144GE DDTC115GE DC Current Transfer Ratio Bleeder Resistor (R2) Tolerance ¾ fT Gain-Bandwidth Product* ¾ 250 MHz Test Condition ¾ VCE = 10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only Ordering Information Notes: (Note 2) Device Packaging Shipping DDTC114GE-7 SOT-523 3000/Tape & Reel DDTC124GE-7 SOT-523 3000/Tape & Reel DDTC144GE-7 SOT-523 3000/Tape & Reel DDTC115GE-7 SOT-523 3000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXX = Product Type Marking Code (See Page 1, e.g. N26 = DDTC114GE) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) XXXYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30316 Rev. 3 - 1 2 of 3 DDTC (R2-ONLY SERIES) E 1 VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) PD, POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 -50 0 50 100 IC/IB = 10 0.1 75°C -25°C 25°C 0.01 0.001 150 0 1000 5 VCE = 10 COB, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) 10 20 40 30 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC TA, AMBIENT TEMPERATURE (°C) Fig. 1 Derating Curve 75°C 100 25°C -25°C IE = 0mA 4 3 2 1 0 0 10 1 1000 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC CURRENT GAIN 5 100 10 15 20 30 25 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 10 75°C VO = 0.2 100 Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA) NEW PRODUCT TYPICAL CURVES - DDTC114GE -25°C 10 25°C 1 0.1 75°C -25°C 1 25°C 0.01 0.001 0 1 2 3 4 5 6 7 8 9 0.1 10 0 Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage DS30316 Rev. 3 - 1 100 200 300 400 500 600 700 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current 3 of 3 DDTC (R2-ONLY SERIES) E