MCT270, MCT271, MCT272, MCT273, MCT274, MCT275, MCT276, MCT277 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 DESCRIPTION The MCT27_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 1 2 6 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO (MCT275 only) BVCEO Collector-base Voltage BVCBO Emitter-base Voltage BVEBO Power Dissipation 30V 80V 70V 5V 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92544m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.2 10 Collector-emitter Breakdown (BVCEO) MCT27x (except MCT275) MCT275 ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 Collector-emitter Saturation VoltageVCE(SAT) IF = 20mA IR = 10µA VR = 3V IC = 1mA 30 V V 70 V IC = 100µA 5 V nA IE = 100µA VCE = 10V % % % % % % % % V 10mA IF , 10V VCE 16mA IF , 2mA IC VRMS VPK Ω See note 1 See note 1 VIO = 500V (note 1) µs µs µs µs µs µs VCC = 5V , RL = 100Ω, IC= 2mA, (fig 1) 50 45 75 125 225 70 15 100 90 150 250 400 210 60 0.4 5300 7500 5x1010 Input-output Isolation Resistance RISO Switching Time tON , tOFF MCT270,272 MCT271 MCT273 MCT274 MCT275,277 MCT276 V V µA 80 50 Input to Output Isolation Voltage VISO Note 1 Note 2 1.5 TEST CONDITION 10 7 20 25 15 3.5 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 100Ω tr Output tf Output 10% 10% 90% 90% FIG 1 7/12/00 DB92544m-AAS/A2 Relative Current Transfer Ratio vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature Collector power dissipation P C (mW) 200 Relative current transfer ratio 1.5 150 100 50 IF = 10mA VCE = 10V 1.0 0.5 0 0 -30 0 25 50 75 100 125 -30 0 25 50 75 Ambient temperature TA ( °C ) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 100 80 1.4 Relative current transfer ratio Forward current I F (mA) 70 60 50 40 30 20 10 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25°C 0.2 0 -30 0 25 50 75 100 1 125 TA = 25°C 50 30 20 30 15 20 10 10 IF = 5mA 0 0 2 4 6 8 Collector-emitter voltage VCE ( V ) 7/12/00 10 10 20 50 Collector-emitter Saturation Voltage vs. Ambient Temperature (V) Collector-emitter saturation voltage V Collector current I C (mA) CE(SAT) Collector Current vs. Collector-emitter Voltage (Normalised to MCT270,273,275,277) 40 5 Forward current IF (mA) Ambient temperature TA ( °C ) 50 2 0.28 0.24 IF = 16mA IC = 2mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 DB92544m-AAS/A2