PD - 90880C RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA) IRH9130 100V, P-CHANNEL ® ™ RADHard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9130 100K Rads (Si) 0.3Ω IRH93130 300K Rads (Si) 0.3Ω ID -11A -11A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-204AA Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -11 -7.0 -44 75 0.6 ±20 190 -11 7.5 -10 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in.(1.6mm) from case for 10s) 11.5 (Typical ) g For footnotes refer to the last page www.irf.com 1 02/18/03 IRH9130 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 — — V — -0.1 — V/°C — — -2.0 2.5 — — — — — — — — 0.3 0.325 -4.0 — -25 -250 Ω — — — — — — — — — — — — — — — — — — — 10 -100 100 45 10 25 30 50 70 70 — ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA nC VGS = -12V, ID = -7.0A ➃ VGS = -12V, ID = -11A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -7.0A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -11A VDS = -50V ns VDD =-50V, ID = -11A VGS =-12V, RG = 7.5Ω V S( ) Ω BVDSS µA nA nH Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from Package) with Source wires internally bonded from Source Pin to Drain Pad C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 300 74 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -11 -44 -3.0 250 0.84 Test Conditions A V nS µC Tj = 25°C, IS = -11A, V GS = 0V ➃ Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units — — — — 1.67 — 30 0.12 — °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRH9130 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100K Rads(Si)1 Min BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance Diode Forward Voltage ➃ 300K Rads (Si)2 Max Min Test Conditions Units Max -100 -2.0 — — — — — -4.0 -100 100 -25 0.3 -100 -2.0 — — — — — -5.0 -100 100 -25 0.3 nA — -3.0 — -3.0 V VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-7A V µA Ω VGS = 0V, IS = -11A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) Energy (MeV) VD S(V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V Cu 28 285 43 -100 -100 -100 -70 -60 Br 36.8 305 39 -100 -100 -70 -50 -40 I 59.9 345 32.8 -60 — — — — -120 VDS -100 -80 Cu -60 Br -40 I -20 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRH9130 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 -5.0V 10 20µs PULSE WIDTH T = 25 C ° J 1 0.1 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP 1 10 -5.0V 100 Fig 1. Typical Output Characteristics 2.5 TJ = 150 ° C 10 V DS = -50V 20µs PULSE WIDTH 7 8 9 10 11 12 13 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C 6 10 100 Fig 2. Typical Output Characteristics 100 5 ° J 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 20µs PULSE WIDTH T = 150 C 1 0.1 ID = -11A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1600 Ciss 1200 800 Coss 400 Crss 20 -VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) IRH9130 10 VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 0 1 ID = -11A FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 10 -VDS , Drain-to-Source Voltage (V) 20 30 40 50 60 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R TJ = 150 ° C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) DS(on) 10 100 TJ = 25 ° C 1 100us 10 V GS = 0 V 0.1 0.0 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 1 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 10ms 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRH9130 Pre-Irradiation 12 RD VDS VGS -ID , Drain Current (A) 10 D.U.T. RG - + 8 VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 4 Fig 10a. Switching Time Test Circuit 2 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRH9130 A IA S -2 0V VGS VD D D R IV E R 0 .0 1 Ω tp 15V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) D .U .T RG 400 L VDS ID -4.9A -7.0A BOTTOM -11A TOP 300 200 100 0 25 IAS 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF -12 V QGS QGD VG D.U.T. +VDS VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform www.irf.com Fig 13b. Gate Charge Test Circuit 7 IRH9130 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L=3.1mH Peak IL = -11A, V GS =-12V ➂ ISD ≤ -11A, di/dt ≤ -480A/µs, VDD ≤ -100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with V DS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-204AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 8 www.irf.com