Hittite HMC-MDB207 Gaas mmic i/q mixer 55 - 64 ghz Datasheet

HMC-MDB207
v02.0209
MIXERS - I/Q MIXERS / IRM - CHIP
3
GaAs MMIC I/Q MIXER
55 - 64 GHz
Typical Applications
Features
This HMC-MDB207 is ideal for:
Wide IF Bandwidth: DC - 3 GHz
• Point-to-Point Radios
High Image Rejection: 30 dB
• Military Radar, ECM & EW
High LO to RF Isolation: 30 dB
• Test & Measurement Equipment
Passive: No DC Bias Required
• SATCOM
Die Size: 2.0 x 1.2 x 0.1 mm
• Sensors
General Description
Functional Diagram
The HMC-MDB207 is a monolithic I/Q Mixer which
can be used as either an image reject mixer (IRM)
or a single sideband upconverter. This passive
MMIC mixer utilizes two double balanced mixer cells
and a 90 degree hybrid. It is fabricated with GaAs
Heterojunction Bipolar Transistor (HBT) Shottky diode
technology. For downconversion applications, an
external quadrature hybrid can be used to select the
desired sideband while rejecting image signals. All
bond pads and the die backside are Ti/Au metallized
and the Shottky devices are fully passivated for reliable
operation. The HMC-MDB207 I/Q MMIC Mixer is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. This compact MMIC is
a much smaller and more consistent alternative to
hybrid style Image Reject Mixers and Single Sideband
Upconverter assemblies. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifi cations,[1] TA = 25 °C, IF = 2 GHz, LO = +16 dBm
Parameter
Min.
Typ.
Frequency Range, RF & LO
55 - 64
Frequency Range, IF
DC - 3
Max.
GHz
GHz
Conversion Loss [2]
9
1 dB Compression (Input)
7
dBm
Image Rejection
30
dB
LO to RF Isolation
30
dB
LO to IF Isolation
30
dB
IP3 (Input)
16
dBm
Amplitude Balance
0.7
Phase Balance
11
1.7
1
[1] Unless otherwise indicated, all measurements are from probed die
[2] Conversion loss assumed that IF1 & IF2 are combined with an ideal off-chip 90° hybrid
3 - 172
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
dB
dB
Deg
HMC-MDB207
v02.0209
GaAs MMIC I/Q MIXER
55 - 64 GHz
Upconverter Conversion Loss [2]
Downconverter Conversion Loss [1]
0
IF2
IF1
IF1
IF2
-2
CONVERSION LOSS (dB)
CONVERSION LOSS (dB)
-2
-4
-6
-8
-10
-12
-14
-4
3
-6
-8
-10
-12
-14
-16
-16
55
57
59
61
63
65
53
55
RF INPUT FREQUENCY (GHz)
Downconverter Amplitude Imbalance [1]
59
61
63
61
63
LO & RF Port Isolation [2]
0
0
-0.5
-1
-10
-1.5
ISOLATION (dB)
AMPLITUDE IMPEDANCE (dB)
57
LO FREQUENCY (GHz)
-2
-2.5
-3
-3.5
-20
-30
-4
-4.5
-5
-40
53
55
57
59
61
63
65
RF INPUT FREQUENCY (GHz)
53
55
57
59
LO FREQUENCY (GHz)
MIXERS - I/Q MIXERS / IRM - CHIP
0
Absolute Maximum Ratings
LO Drive
20 dBm
Storage Temperature
-65 °C to 150 °C
Operating Temperature
-55 °C to 85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
[1] IF = RF -LO. RF and LO Tracking, IF = 2 GHz
[2] RF = LO + IF. RF and LO Tracking. IF = 2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 173
HMC-MDB207
v02.0209
GaAs MMIC I/Q MIXER
55 - 64 GHz
Outline Drawing
MIXERS - I/Q MIXERS / IRM - CHIP
3
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Pad Descriptions
3 - 174
Pad Number
Function
Pin Description
1, 3
IF1, IF2
This pad is DC coupled.
2
LO
This pad is DC coupled and matched to 50 Ohms.
4
RF
This pad is DC coupled and matched to 50 Ohms.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-MDB207
v02.0209
GaAs MMIC I/Q MIXER
55 - 64 GHz
Application Circuits
Application circuit 1 shows the mixer equivalent circuit. Application Circuit 2 depicts the mixer with a 90°hybrid used to
achieve signal image rejection. All RF parameters are specified with an ideal 90° hybrid on IF output ports. Conversion
loss is measured (on wafer) at IF1 and/or IF2 (Application Circuit 1) with the second IF port terminated into 50 ohms.
Three dB is then added to compensate for an ideal hybrid. The IP3 is stated as an input IP3 number and is obtained
via a two-tone measurement.
3
Application Circuit 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MIXERS - I/Q MIXERS / IRM - CHIP
Application Circuit 1
3 - 175
HMC-MDB207
v02.0209
GaAs MMIC I/Q MIXER
55 - 64 GHz
Assembly Diagram
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 176
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-MDB207
v02.0209
GaAs MMIC I/Q MIXER
55 - 64 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
3
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
MIXERS - I/Q MIXERS / IRM - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 177
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