PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes VCES = 600V VCE(on) typ. = 2.21V G @VGE = 15V, IC = 16A E n-ch an nel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses • This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products • For hints see design tip 97003 D 2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 28 16 58 58 12 58 10 ± 20 100 42 -55 to +150 V A µs V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state)U Weight Typ. Max. Units ––– 1.2 2.5 ––– 40 ––– °C/W 0.5 ––– 1.44 g 1 4/24/2000 IRG4BC30KD-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 600 — — V Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C Collector-to-Emitter Saturation Voltage — 2.21 2.7 — 2.88 — V — 2.36 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -12 — mV/°C Forward Transconductance T 5.4 8.1 — S Zero Gate Voltage Collector Current — — 250 µA — — 2500 Diode Forward Voltage Drop — 1.4 1.7 V — 1.3 1.6 Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 16A VGE = 15V See Fig. 2, 5 IC = 28A IC = 16A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 16A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 12A See Fig. 13 IC = 12A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 67 100 IC = 16A 11 16 nC VCC = 400V See Fig.8 25 37 VGE = 15V 60 — 42 — TJ = 25°C ns 160 250 IC = 16A, VCC = 480V 80 120 VGE = 15V, RG = 23Ω 0.60 — Energy losses include "tail" 0.58 — mJ and diode reverse recovery 1.18 1.6 See Fig. 9,10,14 — — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V 58 — TJ = 150°C, See Fig. 11,14 42 — IC = 16A, VCC = 480V ns 210 — VGE = 15V, RG = 23Ω 160 — Energy losses include "tail" 1.69 — mJ and diode reverse recovery 7.5 — nH Measured 5mm from package 920 — VGE = 0V 110 — pF VCC = 30V See Fig. 7 27 — ƒ = 1.0MHz 42 60 TJ = 25°C See Fig. ns 80 120 TJ = 125°C 14 IF = 12A 3.5 6.0 TJ = 25°C See Fig. A 5.6 10 TJ = 125°C 15 VR = 200V 80 180 TJ = 25°C See Fig. nC 220 600 TJ = 125°C 16 di/dt = 200Aµs 180 — TJ = 25°C See Fig. A/µs 160 — TJ = 125°C 17 www.irf.com IRG4BC30KD-S 2.5 For both: D uty cy cle: 50% TJ = 125°C 55°C T s ink = 90°C G ate drive as specified LOAD CURRENT (A) 2.0 P ow e r Dis sip ation = 1.8 W 1.5 S q u a re w a v e : 6 0% of rate d volta ge 1.0 I 0.5 Id e a l d io d e s 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 o C TJ = 150 o C 10 1 V = 15V 20µs PULSE WIDTH GE 0.1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 o C 10 TJ = 25 oC 1 V = 50V 5µs PULSE WIDTH CC 0.1 5 10 15 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30KD-S 4.0 30 V = 15V 80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) GE Maximum DC Collector Current(A) 25 20 15 10 5 0 25 50 75 100 125 150 I C = 32 A 3.0 I C = 16 A I C = 8.0A 8A 2.0 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 , Junction Temperature ( °C) TT J J, Junction Temperature ( °C ) TC , Case Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30KD-S VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 1200 Cies 900 600 C oes 300 20 VGE , Gate-to-Emitter Voltage (V) 1500 VCC = 400V I C = 16A 16 12 8 4 C res 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 10 V CC = 480V V GE = 15V TJ = 25 ° C 1.40 I C = 16A 1.30 1.20 1.10 1.00 0 10 20 30 40 RG, ,Gate Gate Resistance Resistance ((Ohm) Ω) RG Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 60 80 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 1.50 20 QG , Total Gate Charge (nC) 50 RG = Ohm 23Ω VGE = 15V VCC = 480V IC = 32 A IC = 16 A 1 IC = 8.0A 8A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30KD-S RG TJ VCC 4.0 VGE Ω = 23 Ohm = 150 ° C = 480V = 15V 100 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 5.0 3.0 2.0 1.0 VGE = 20V oC 125°C T J = 125 10 SAFE OPERATING AREA 0.0 1 0 8 16 24 32 40 1 I C , Collector-to-emitter Current (A) 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Insta ntane ous Forward C urrent - I F (A ) 100 TJ = 15 0°C TJ = 12 5°C 10 TJ = 2 5°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Fo rwa rd V oltage D rop - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30KD-S 100 160 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 120 I IR R M - (A ) t rr - (ns) I F = 24 A I F = 1 2A 80 I F = 6 .0 A I F = 2 4A I F = 1 2A 10 I F = 6 .0A 40 0 100 d i f /d t - (A /µ s) 1 100 1000 1000 di f /dt - (A /µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 600 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C d i(re c )M /d t - (A /µ s) VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C Q R R - (n C ) 400 I F = 24 A I F = 12 A 200 1000 IF = 6.0 A I F = 12 A 100 I F = 2 4A I F = 6.0 A 0 100 d i f /dt - (A /µs) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 10 100 1000 d i f /d t - (A /µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC30KD-S Same ty pe device as D .U.T. 430µF 80% of Vce 90% D .U .T. 10% Vge VC 90% t d(off) 10% IC 5% Fig. 18a - Test Circuit for Measurement of tf tr ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5µs Eon Eoff E ts = (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Ic ddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt Vce E on = V t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc d t dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC30KD-S V g G A T E S IG N AL D EV IC E UN DE R T E ST C UR R EN T D.U .T . V O LT A G E IN D .U.T . C UR R EN T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1 000 V RL= Vc * 480V 4 X IC @25°C 0 - 480V 50V 6 00 0µ F 100 V Figure 20. Pulsed Collector Current Test Circuit Figure 19. Clamped Inductive Load Test Circuit Tape & Reel Information D2Pak TRR 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) F E E D D I R E C T IO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 1.6 0 (.4 5 7 ) 1 1.4 0 (.4 4 9 ) 15 .42 ( .6 09 ) 15 .22 ( .6 01 ) 2 4 .3 0 (.95 7 ) 2 3 .9 0 (.94 1 ) TRL 1 0 .9 0 (.4 2 9) 1 0 .7 0 (.4 2 1) 1 .7 5 ( .0 69 ) 1 .2 5 ( .0 49 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .10 (.6 3 4 ) 1 5 .90 (.6 2 6 ) F E E D D IR E C T IO N 1 3.50 ( .5 32 ) 1 2.80 ( .5 04 ) 27 .4 0 ( 1.0 79 ) 23 .9 0 ( .94 1) 4 3 3 0.00 ( 14 .1 7 3) M AX . N O T ES : 1. C O MF O R M S T O EIA-4 18 . 2. C O N TR O LL IN G D IM EN S IO N : MIL LIM ET ER . 3. D IM EN S IO N M EA SU R ED @ H U B. 4. IN C LU D E S F LAN G E D IST O R T IO N @ O U TER ED G E. www.irf.com 6 0.00 (2 .3 62) M IN . 2 6 .4 0 ( 1.03 9 ) 2 4 .4 0 ( .9 61 ) 3 30 .4 0 (1.19 7) M A X. 4 9 IRG4BC30KD-S Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. U When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. D2Pak Package Outline 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 1 .4 0 (.0 55 ) M A X. -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 2 1 .7 8 (.0 7 0 ) 1 .2 7 (.0 5 0 ) 1 1 0 .1 6 (.4 0 0 ) REF . -B - 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 6 .4 7 (.2 5 5 ) 6 .1 8 (.2 4 3 ) 3 1 5 .4 9 (.6 1 0 ) 1 4 .7 3 (.5 8 0 ) 2 .7 9 (.1 1 0 ) 2 .2 9 (.0 9 0 ) 2 .6 1 (.1 0 3 ) 2 .3 2 (.0 9 1 ) 5 .2 8 (.2 0 8 ) 4 .7 8 (.1 8 8 ) 3X 1 .4 0 (.0 5 5 ) 1 .1 4 (.0 4 5 ) 5 .0 8 (.2 0 0 ) 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 0 .9 3 (.0 3 7 ) 3X 0 .6 9 (.0 2 7 ) 0 .2 5 (.0 1 0 ) M 8 .8 9 (.3 5 0 ) REF. 1 .3 9 (.0 5 5 ) 1 .1 4 (.0 4 5 ) B A M M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .43 (.4 5 0 ) NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S . L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 8 .8 9 (.3 5 0 ) 1 7 .7 8 (.7 0 0 ) 3 .8 1 (.1 5 0 ) 2 .0 8 (.0 8 2 ) 2X 2 .5 4 (.1 0 0 ) 2X IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 10 www.irf.com