BCD AZ4559M Dual bipolar operational amplifier Datasheet

Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
General Description
Features
The AZ4559 consists of two high performance
operational amplifiers. The IC features high gain, low
equivalent input noise voltage, excellent channel
separation, wide range of operating voltage and
internal frequency compensation.
·
·
·
·
·
·
It can work with ±18V maximum power supply
voltage or single power supply up to 36V.
Internally Frequency Compensated
Large Signal Voltage Gain: 100dB Typical
Gain and Phase Match between Amplifiers
Gain Bandwidth Product (at 10KHz): 6MHz
Slew Rate: 3V/µs Typical
Pin to Pin Compatible with MC1458
Applications
The AZ4559 is available in DIP-8 and SOIC-8 packages.
·
·
SOIC-8
Audio AC-3 Decoder System
Audio Amplifier
DIP-8
Figure 1. Package Types of AZ4559
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
Pin Configuration
M Package/P Package
(SOIC-8/DIP-8)
OUTPUT 1
1
8
VCC
INPUT 1-
2
7
OUTPUT 2
INPUT 1+
3
6
INPUT 2-
VEE
4
5
INPUT 2+
Figure 2. Pin Configuration of AZ4559 (Top View)
Functional Block Diagram
VCC
- Input
+ Input
Output
VEE
Figure 3. Functional Block Diagram of AZ4559 (Each Amplifier)
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
Ordering Information
AZ4559
-
Circuit Type
E1: Lead Free
Package
M: SOIC-8
P: DIP-8
TR: Tape and Reel
Package
Temperature
Range
SOIC-8
-40 to 85oC
DIP-8
-40 to 85oC
Blank: Tin Lead
Blank: Tube
Part Number
Tin Lead
Marking ID
Lead Free
Tin Lead
Lead Free
Packing Type
AZ4559M
AZ4559M-E1
4559M
4559M-E1
Tube
AZ4559MTR
AZ4559MTR-E1
4559M
4559M-E1
Tape & Reel
AZ4559P
AZ4559P-E1
AZ4559P
AZ4559P-E1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
VCC
+20
V
VEE
-20
V
VI
±15
V
VID
±30
V
TJ
150
oC
TSTG
-65 to 150
Lead Temperature (Soldering 10s)
TL
260
Power Dissipation
PD
Power Supply Voltage
Input Voltage
Differential Input Voltage
Operating Junction Temperature
Storage Temperature Range
oC
o
C
DIP
800
SOIC
500
mW
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Min
Max
Unit
Supply Voltage
±2
±18
V
Operating Temperature Range
-40
85
Aug. 2006 Rev. 1. 2
o
C
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
Electrical Characteristics
Operating Conditions: VCC=+15V, VEE= -15V, TA=25oC, unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.5
3
mV
Input Offset Voltage
VIO
Input Offset Current
IIO
VCM=0V
10
100
nA
Input Bias Current
IIB
VCM=0V
70
400
nA
Large Signal Voltage Gain
AVD
RL= 2kΩ, VO=±10V
85
100
dB
Supply Voltage Rejection Ratio
SVR
RS≤10kΩ
80
95
dB
Supply Current
ICC
All Amplifiers, No Load
Input Common Mode Voltage
Range
VICM
Common Mode Rejection Ratio
CMRR
2.5
±12
5.0
mA
V
RS≤10kΩ
70
95
RL≥10kΩ
±12
±14
RL≥2kΩ
±10
±13
dB
Output Voltage Swing
VO
Slew Rate
SR
VI=±10V, RL=2kΩ,
CL=100pF, unity gain
3.0
V/µs
Rise Time
TR
VI=±20mV, RL=2kΩ,
CL=100pF, unity gain
0.25
µs
Overshoot
KOV
9
%
0.7
MΩ
VI=±20mV, RL=2kΩ, CL=100pF, unity
gain
V
Input Resistance
RI
Output Resistance
RO
45
Ω
Unity Gain Bandwidth
B
3.5
MHz
6.0
MHz
0.002
%
RS=100Ω, f=1kHz
10
nV---------
ISINK
V-=1V, V+=0V, VO=2V
65
ISOURCE
V+=1V, V-= 0V, VO=2V
35
0.3
Gain Bandwidth Product
GBWP
VI= ±10mV, RL=2kΩ,
CL=100pF, f=10kHz
Total Harmonic Distortion Plus
Noise
THD+N
f=1kHz, AV=6dB, RL=10kΩ,
VO=1VRMS
Equivalent Input Noise Voltage
Density
eN
Output Current
Aug. 2006 Rev. 1. 2
Hz
mA
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
Typical Performance Characteristics
120
Maximum Output Voltage Swing (V)
20
Open Loop Gain (dB)
100
80
60
40
20
15
VCC=+15V, VEE=-15V,
RL=2KΩ, THD+N<5%
10
5
0
1
10
100
1k
10k
100k
1M
1
10M
10
100
Frequency (Hz)
Figure 4. Open Loop Voltage Gain vs. Frequency
10k
100k
1M
Figure 5. Maximum Output Voltage Swing vs. Frequency
3.2
16
12
3.0
P o sitive V o lta g e S w in g
8
Supply Current (mA)
Maximum Output Voltage Swing (V)
1k
Frequency (Hz)
4
0
-4
-8
2.8
2.6
2.4
2.2
N e g a tive V o lta g e S w in g
-12
2.0
-16
100
1k
-40.0
10k
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
120.0
O
R e sista n ce L o a d ( Ω )
Temperature ( C)
Figure 6. Maximum Output Voltage Swing
Figure 7. Supply Current vs. Temperature
vs. Load Resistance
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
Typical Performance Characteristics (Continued)
5
120
100
Input Bias Current (nA)
Input Offset Voltage (mV)
4
3
2
1
0
80
60
40
20
-1
-2
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
0
-40.0
120.0
O
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
120.0
O
Temperature ( C)
Temperature ( C)
Figure 8. Input Offset Voltage vs. Temperature
Figure 9. Input Bias Current vs. Temperature
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
Typical Application
R1
20K 1%
C1
150pF
VEE=-12V
VIN
C3
0.1µF
C2
R2 10K 1%
22µF/
25V
R3
3.3K 1%
2 (6)
-
4
AZ4559
3 (5)
C5
1000pF
GND
OUT
VOUT
22uF/25V
+ 8
R5
10K
R4
6.8K
GND
C4
1 (7)
C6
0.1µF
VCC=+12V
GND
GND
GND
Figure 10. Typical Application of AZ4559 in Audio 2nd Order Low Pass Filter
(FO=50.58KHz, Q=0.7015, Input impedance=10K, Gain=6dB, Group Delay=4.48ms)
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
Mechanical Dimensions
DIP-8
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP
6°
5°
6°
3.200(0.126)
3.600(0.142)
3.710(0.146)
4.310(0.170) 4°
4°
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.360(0.014)
8.200(0.323)
9.400(0.370)
0.254(0.010)TYP
2.540(0.100) TYP
0.360(0.014)
0.560(0.022)
0.130(0.005)MIN
6.200(0.244)
6.600(0.260)
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS
AZ4559
Mechanical Dimensions (Continued)
SOIC-8
Unit: mm(inch)
4.800(0.189)
5.000(0.197)
7°
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
φ 0.800(0.031)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.190(0.007)
0.250(0.010)
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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