AP15T15GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristics
D
▼ RoHS Compliant & Halogen-Free
BVDSS
RDS(ON)
ID
150V
150mΩ
10A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
10
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
6
A
40
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.3
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Unit
Rthj-c
Symbol
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Parameter
Data & specifications subject to change without notice
1
201101051
AP15T15GI-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=8A
Min.
Typ.
Max. Units
150
-
-
150
V
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=4.5V, ID=5A
-
-
250
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=8A
-
10
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=120V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=8A
-
24
38
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=120V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
10
-
nC
2
td(on)
Turn-on Delay Time
VDS=75V
-
7
-
ns
tr
Rise Time
ID=8A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
20
-
ns
tf
Fall Time
VGS=10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
IS=8A, VGS=0V
-
-
1.3
V
1000 1600
pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
160
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15T15GI-HF
32
24
10V
8.0V
7.0V
6.0V
V G =5.0V
ID , Drain Current (A)
28
24
20
16
12
10V
8.0V
7.0V
6.0V
V G =5.0V
o
T C =150 C
20
ID , Drain Current (A)
T C = 25 o C
16
12
8
8
4
4
0
0
0
3
6
9
0
12
Fig 1. Typical Output Characteristics
10
15
Fig 2. Typical Output Characteristics
2.8
1.4
I D =5A
V GS =10V
I D =1mA
Normalized RDS(ON)
2.4
Normalized BVDSS (V)
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.2
1
2
1.6
1.2
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
-50
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2
8
I D =1mA
Normalized VGS(th) (V)
1.6
IS(A)
6
4
T j =150 o C
T j =25 o C
1.2
0.8
2
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15T15GI-HF
f=1.0MHz
2000
I D =8A
V DS =75V
V DS =90V
V DS =120V
10
1600
8
1200
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
800
4
400
2
C oss
C rss
0
0
0
10
20
30
1
40
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
Operation in this
area limited by
RDS(ON)
100us
ID (A)
10
1ms
1
10ms
100ms
1s
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4