BBY59... Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in moblie communications equipment For control elements as TCXOS and VCXOS High capacitance ratio and good C-V linearity BBY59-02V 1 2 Type Package Configuration BBY59-02V SC79 single LS (nH) Marking 0.6 RR Maximum Ratings Parameter Symbol Diode reverse voltage VR 15 V Forward current IF 50 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 1 Value Unit Jul-18-2002 BBY59... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 10 V - - 20 VR = 10 V, TA = 85 °C - - 100 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 26,6 27.8 29 VR = 2 V, f = 1 MHz 13.6 15.3 17 VR = 3 V, f = 1 MHz 8,4 9.5 10.9 VR = 4 V, f = 1 MHz 6,1 6,95 7,8 3,4 4 4,6 - 0.45 0.7 Capacitance ratio CT1 /CT4 VR = 1 V, VR = 4 V Series resistance rS VR = 1 V, f = 470 MHz 2 Jul-18-2002 BBY59... Diode capacitance CT = (VR ) Temperature coefficient of the diode f = 1MHz capacitance TCC = (VR ) 60 0.00095 1/°C pF 0.00085 0.0008 45 0.00075 40 0.0007 TCC CT 50 0.00065 35 0.0006 30 0.00055 25 0.0005 20 0.00045 0.0004 15 0.00035 10 5 0 0.0003 0.5 1 1.5 2 2.5 3 V 0.00025 4 VR 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VR 3 Jul-18-2002