CED6031L/CEU6031L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 30 Units V VGS ±20 V ID 55 A IDM 140 A 50 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range S PD 0.3 W/ C TJ,Tstg -55 to 175 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 3 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W 1998.March http://www.cetsemi.com 6 - 82 CED6031L/CEU6031L Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 24V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 1.6 3 V VGS = 10V, ID = 5A 1 8.5 11 mΩ VGS = 4.5V, ID = 5A 12 15 mΩ VDS = 10V, ID = 26A 32 S 1800 pF 700 pF 200 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 55A, VGS = 10V, RGEN = 24Ω 10 16 ns 190 250 ns 55 90 ns Turn-Off Fall Time tf 130 200 ns Total Gate Charge Qg 27 33 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 24V, ID = 48A, VGS = 5V 6 nC 14 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 26A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 6 - 83 0.93 55 A 1.3 V 6 CED6031L/CEU6031L 25 50 25 C 20 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5,4V 15 VGS=3V 10 5 40 30 20 10 -55 C TJ=125 C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) Ciss 2000 1500 1000 Coss 500 Crss 0 5 10 15 20 25 2.2 1.9 ID=5A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 0 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 VGS, Gate-to-Source Voltage (V) 2500 1.2 4 VDS, Drain-to-Source Voltage (V) 3000 1.3 2 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 2 1 0 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 6 - 84 10 VDS=24V ID=48A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED6031L/CEU6031L 6 4 2 10 10 RDS(ON)Limit 2 100µs 1ms 10ms 100ms DC 1 0 0 12 24 36 48 6 TC=25 C TJ=175 C Single Pulse 0 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 0.05 -1 PDM t1 t2 0.02 0.01 Single Pulse 10 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 6 - 85 10 3 10 4