ETL GJ122 N p n e p i t a x i a l p l a n a r t r a n s i s t o r Datasheet

ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GJ122
NPN EPITAXIAL PLANAR T RANSISTOR
Description
The GJ122 is designed for use in general purposes and low speed switching applications.
Features
High DC current gain
Built-in a damper diode at E-C
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
BVCBO
100
V
Collector to Emitter Voltage
BVCEO
100
V
Emitter to Base Voltage
BVEBO
5
V
Collector Current
Total Power Dissipation(Tc=25
)
IC
5
A
PD
20
W
Electrical Characteristics (Rating at 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
100
100
5
1
1
-
Typ.
-
ambient temperature unless otherwise specified)
Max.
10
10
2
2
4
4
2.5
200
Unit
V
V
V
A
A
mA
V
V
V
V
K
K
pF
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
IE=1mA, IC=0
VCB=100V, IE=0
VCE=50V, IB=0
VEB=5V, IC=0
IC=3A, IB=16mA
IC=5A, IB=20mA
IC=5A, IB=50mA
VCE=3V, IC=3A
VCE=3V, IC=500mA
VCE=3V, IC=3A
VCB=10V, f=1MHz
* Pulse Test: Pulse Width
GJ122
380 s, Duty Cycle 2%
Page: 1/3
ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
Characteristics Curve
GJ122
Page: 2/3
ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ122
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