Schottky Barrier Diodes (SBD) MA6J784 Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 5 4 1 2 3 0.7±0.1 • IF(AV) = 100 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Low forward voltage VF and good rectification efficiency 5˚ Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Average forward current *2 IF(AV) 100 mA IFM 300 mA IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Peak forward current *2 Non-repetitive peak forward surge current *1, 2 (0.15) 0 to 0.1 Symbol Reverse voltage 0.16+0.10 –0.06 0.2±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 5˚ ■ Features (0.425) 6 1.25±0.1 2.1±0.1 For super high speed switching For small current rectification 1: Anode 1 2: Anode 2 3: Anode 3 4: Cathode 3 5: Cathode 2 6: Cathode 1 EIAJ: SC-88 SMini6-F1 Package Marking Symbol: M8A Internal Connection 6 5 4 1 2 3 Note) *1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) *2: Value of each diode in double diodes used. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA Reverse current IR VR = 30 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 20 pF Reverse recovery time * trr IF = IR = 100 mA Irr = 0.1 • IR , RL = 100 Ω 2.0 ns 0.55 V 15 µA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Rated input/output frequency: 250 MHz 4. *: trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: October 2003 Wave Form Analyzer (SAS-8130) Ri = 50 Ω SKH00133AED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 • IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 M6J784 IF V F I R VR 103 75°C 25°C 1 10−1 0.8 Ta = 125°C 102 75°C 10 25°C 0.1 0.2 0.3 0.4 0.5 10−1 0.6 0 Forward voltage VF (V) 5 10 15 20 25 30 IR T a Ct VR 24 f = 1 MHz Ta = 25°C Reverse current IR (µA) VR = 30 V 3V 1V 102 10 1 10−1 −40 16 12 8 4 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 Terminal capacitance Ct (pF) 20 103 200 IF = 100 mA 0.4 0 5 10 15 20 25 Reverse voltage VR (V) SKH00133AED 0 −40 10 mA 3 mA 0 40 80 120 160 Ambient temperature Ta (°C) Reverse voltage VR (V) 104 0.6 0.2 1 0 Forward voltage VF (V) −20°C Ta = 125°C 10 1.0 103 Reverse current IR (µA) Forward current IF (mA) 102 10−2 VF T a 104 30 200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP