Siemens HYM322160S-70 2m x 32-bit dynamic ram module Datasheet

2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
•
2 097 152 words by 32-Bit organization
(alternative 4 194 304 words by 16-Bit)
•
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
•
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
•
Single + 5 V (± 10 %) supply
•
Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 88 mW standby
TTL – 176 mW standby
•
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
•
8 decoupling capacitors mounted on
substrate
•
All inputs, outputs and clocks fully TTL
compatible
•
72 pin double-sided Single in-Line Memory
Module with 25.4 mm (1000 mil) height
•
Utilizes sixteen 1M × 4 DRAMs in 300 mil
SOJ packages
•
1024 refresh cycles / 16 ms
•
Tin-Lead contact pads (S - version)
•
Gold contact pads (GS - version)
Ordering Information
Type
Ordering Code
Package
Description
HYM 322160S-60
Q67100-Q2014
L-SIM-72-11
DRAM Module
(access time 60 ns)
HYM 322160S-70
Q67100-Q2015
L-SIM-72-11
DRAM Module
(access time 70 ns)
HYM 322160GS-60
Q67100-Q2016
L-SIM-72-11
DRAM Module
(access time 60 ns)
HYM 322160GS-70
Q67100-Q2017
L-SIM-72-11
DRAM Module
(access time 70 ns)
Semiconductor Group
551
09.94
HYM 322160S/GS-60/-70
2M x 32-Bit
The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by
32-Bit in a 72-pin single-in-line package comprising sixteen HYB514400BJ 1M × 4 DRAMs in 300
mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC
board.
The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Pin No.
Function
A0-A9
Address Inputs
DQ0-DQ31
Data Input/Output
CAS0 - CAS3
Column Address Strobe
RAS0 - RAS3
Row Address Strobe
WE
Read/Write Input
VCC
Power (+ 5 V)
VSS
Ground
PD
Presence Detect Pin
N.C.
No Connection
Presence Detect Pins
-60
-70
PD0
N.C.
N.C.
PD1
N.C.
N.C.
PD2
N.C.
VSS
PD3
N.C.
N.C.
Semiconductor Group
552
HYM 322160S/GS-60/-70
2M x 32-Bit
Pin Configuration
(top view)
Semiconductor Group
553
HYM 322160S/GS-60/-70
2M x 32-Bit
Block Diagram
Semiconductor Group
554
HYM 322160S/GS-60/-70
2M x 32-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range......................................................................................... – 55 to 125 ˚C
Soldering temperature ............................................................................................................ 260 ˚C
Soldering time ............................................................................................................................. 10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 6.2 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics1)
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %
Parameter
Symbol
Limit Values
min.
max.
Unit
Input high voltage
VIH
2.4
5.5
V
Input low voltage
VIL
– 1.0
0.8
V
Output high voltage (IOUT = – 5 mA)
VOH
2.4
–
V
Output low voltage (IOUT = 4.2 mA)
VOL
–
0.4
V
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
– 20
20
µA
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
– 20
20
µA
–
–
880
800
mA
mA
ICC2
–
32
mA
Average VCC supply current
ICC3
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-60 version
-70 version
–
–
880
800
mA
mA
ICC1
Average VCC supply current
(RAS, CAS, address cycling, tRC = tRC min)
-60 version
-70 version
Standby VCC supply current
(RAS = CAS = VIH)
Semiconductor Group
555
Test
Condition
2)
,
3)
2)
HYM 322160S/GS-60/-70
2M x 32-Bit
DC Characteristics1) (cont’d)
Parameter
Symbol
Limit Values
Unit
Test
Condition
2)
min.
max.
–
–
560
560
mA
mA
ICC5
–
16
mA
Average VCC supply current
ICC6
during CAS-before-RAS refresh mode
(RAS, CAS cycling, tRC = tRC min)
-60 version
-70 version
–
–
880
800
mA
mA
Average VCC supply current
ICC4
during fast page mode
(RAS = VIL, CAS, address cycling,
tPC = tPC min)
-60 version
-70 version
Standby VCC supply current
(RAS = CAS = VCC – 0.2 V)
,
3)
2)
Capacitance
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %, f = 1 MHz
Parameter
Symbol
Limit Values
min.
max.
Unit
Input capacitance
(A0 to A9, WE)
CI1
–
120
pF
Input capacitance
(RAS0-RAS2, CAS0-CAS3)
CI2
–
40
pF
I/O capacitance
(DQ0-DQ31)
CIO1
–
29
pF
Semiconductor Group
556
HYM 322160S/GS-60/-70
2M x 32-Bit
AC Characteristics 4) 5)
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
HYM
322160S/GS-60
Unit
HYM
322160S/GS-70
min.
max.
min.
max.
Random read or write cycle time
tRC
110
–
130
–
ns
Fast page mode cycle time
tPC
40
–
45
–
ns
Access time from RAS
6) 11) 12)
tRAC
–
60
–
70
ns
Access time from CAS
6) 11)
tCAC
–
15
–
20
ns
tAA
–
30
–
35
ns
tCPA
–
35
–
40
ns
Access time from column
address
Access time from CAS
precharge
6) 12)
6)
CAS to output in low-Z
6)
tCLZ
0
–
0
–
ns
Output buffer turn-off delay
7)
tOFF
0
20
0
20
ns
Transition time (rise and fall)
5)
tT
3
50
3
50
ns
RAS precharge time
tRP
40
–
50
–
ns
RAS pulse width
tRAS
60
10000
70
10000
ns
RAS pulse width
tRASP
60
200000
70
200000
ns
CAS precharge to RAS delay
tRHCP
35
–
40
–
ns
RAS hold time
tRSH
15
–
20
–
ns
CAS hold time
tCSH
60
–
70
–
ns
CAS pulse width
tCAS
15
10000
20
10000
ns
tRCD
20
45
20
50
ns
tRAD
15
30
15
35
ns
CAS to RAS precharge time
tCRP
5
–
5
–
ns
CAS precharge time
(fast page mode)
tCP
10
–
10
–
ns
Row address setup time
tASR
0
–
0
–
ns
Row address hold time
tRAH
10
–
10
–
ns
Column address setup time
tASC
0
–
0
–
ns
Column address hold time
tCAH
15
–
15
–
ns
(fast page mode)
RAS to CAS delay time
RAS to column address
delay time
Semiconductor Group
11)
12)
557
HYM 322160S/GS-60/-70
2M x 32-Bit
AC Characteristics4) 5) (cont’d)
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
HYM
322160S/GS-60
Unit
HYM
322160S/GS-70
min.
max.
min.
max.
30
–
35
–
ns
tRCS
0
–
0
–
ns
tRCH
0
–
0
–
ns
tRRH
0
–
0
–
ns
Write command hold time
tWCH
10
–
15
–
ns
Write command pulse width
tWP
10
–
15
–
ns
Write command to RAS lead time
tRWL
15
–
20
–
ns
Write command to CAS lead time
tCWL
15
–
20
–
ns
Column address to RAS lead time tRAL
Read command setup time
Read command hold time
Read command hold time
ref. to RAS
8)
8)
Data setup time
9)
tDS
0
–
0
–
ns
Data hold time
9)
tDH
15
–
15
–
ns
tREF
–
16
–
16
ms
Write command setup time
10)
tWCS
0
–
0
–
ns
CAS setup time
13)
tCSR
5
–
5
–
ns
CAS hold time
13)
tCHR
15
–
15
–
ns
RAS to CAS precharge time
tRPC
0
–
0
–
ns
CAS precharge time
tCP
10
–
10
–
ns
Refresh period
Write to RAS precharge time
13)
tWRP
10
–
10
–
ns
Write hold time ref. to RAS
13)
tWRH
10
–
10
–
ns
Semiconductor Group
558
HYM 322160S/GS-60/-70
2M x 32-Bit
Notes:
1) All voltages are referenced to VSS .
2) ICC1, ICC3, ICC4 and ICC6 depend on cycle rate.
3) ICC1 and ICC4 depend on output loading. Specified values are measured with the output open.
4) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles out of which at least one cycle
has to be a refresh cycle before proper device operation is achieved. In case of using internal refresh counter,
a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required.
5) VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are also
measured between VIH and VIL .
6) Measured with a load equivalant of 2 TTL loads and 100 pF.
7) tOFF (max.) defines the time at which the output achieves the open-circuit condition and is not referenced to
output voltage levels.
8) Either tRCH or tRRH must be satisfied for a read cycle.
9) These parameters are referenced to the CAS leading edge.
10) tWCS is not a restrictive operating parameter. This is included in the data sheet as electrical characteristic only.
If tWCS > tWCS (min.), the cycle is an early write cycle and data out pin will remain open circuit (high impedance).
11) Operation within the tRCD (max.) limit insures that tRAC (max.) can be met. tRCD (max.) is specified as a reference
point only. If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled by tCAC .
12) Operation within the tRAD (max.) limit insures that tRAC (max.) can be met. tRAD (max.) is specified as a reference
point only. If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled by tAA .
13)For CAS-before-RAS cycles only.
Semiconductor Group
559
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