FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Features Description • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested D D G S I-PAK D-PAK G D G S S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) FQD10N20CTM / FQU10N20CTU 200 Unit V 7.8 A 5.0 A 31.2 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 7.8 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 5.0 5.5 50 0.4 -55 to +150 mJ V/ns W W/°C °C 300 °C FQD10N20CTM / FQU10N20CTU 2.5 Unit dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient, Max. ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 110 1 °C/W www.fairchildsemi.com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET November 2013 Device Marking FQD10N20C Device FQD10N20CTM Package D-PAK Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FQU10N20C FQU10N20CTU I-PAK Tube N/A 70 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 200 -- -- V -- 0.28 -- V/°C VDS = 200 V, VGS = 0 V -- -- 10 μA VDS = 160 V, TC = 125°C -- -- 100 μA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 μA 2.0 -- 4.0 V VGS = 10 V, ID = 3.9 A -- 0.29 0.36 Ω VDS = 40 V, ID = 3.9 A -- 5.6 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 395 510 pF -- 97 125 pF -- 40.5 53 pF On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4) VDS = 160 V, ID = 9.5 A, VGS = 10 V (Note 4) -- 11 30 ns -- 92 190 ns -- 70 150 ns -- 72 160 ns -- 20 26 nC -- 3.1 -- nC -- 10.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.8 A ISM -- -- 31.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.8 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 158 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/μs -- 0.97 -- μC NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 5.2 mH, IAS = 7.8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9.5 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 2 www.fairchildsemi.com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C o -55 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.0 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1.5 VGS = 10V VGS = 20V 0.5 ※ Note : TJ = 25℃ 0.0 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0 5 10 15 20 25 10 30 0.2 0.4 ID, Drain Current [A] 1200 Ciss Coss 600 Crss 400 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 200 0 -1 10 1.0 1.2 1.4 1.6 12 VGS, Gate-Source Voltage [V] 800 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Capacitances [pF] 25℃ VDS = 40V 10 VDS = 100V VDS = 160V 8 6 4 2 ※ Note : ID = 9.5A 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 0 4 8 12 16 20 24 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET Typical Characteristics 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 3.9 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2 10 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 8 100 μs 1 10 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C 6 4 2 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 100 125 150 Figure 10. Maximum Drain Current vs Case Temperature D = 0 .5 0 ※ N o te s : 1 . Z θ J C ( t) = 2 .5 ℃ /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e θJC ZθJC Thermal Response [oC/W] Z (t),(t), Thermal Response Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 4 www.fairchildsemi.com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET Typical Characteristics (Continued) FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 6 www.fairchildsemi.com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET Mechanical Dimensions TO-252 3L (DPAK) Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 Dimension in Millimeters ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 7 www.fairchildsemi.com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET Mechanical Dimensions TO-251 3L (IPAK) Figure 17. TO251 (IPAK) Molded 3 Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003 Dimension in Millimeters ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C2 9 www.fairchildsemi.com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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