HMC311LP3 / 311LP3E v03.0907 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 8 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC311LP3 / HMC311LP3E is an ideal RF/IF gain block or LO buffer amplifier for: P1dB Output Power: +15.5 dBm • Cellular / PCS / 3G Gain: 14.5 dB • Fixed Wireless & WLAN 50 Ohm I/O’s • CATV & Cable Modem 16 Lead 3x3mm SMT Package: 9mm2 Output IP3: +32 dBm • Microwave Radio Functional Diagram General Description The HMC311LP3 & HMC311LP3E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifi cations, Vs= 5.0 V, Rbias= 22 Ohm, TA = +25° C Parameter Min. Typ. 13.0 12.5 12.0 14.5 14.3 14.0 Max. Gain Gain Variation Over Temperature DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz 0.005 0.008 0.012 Return Loss Input / Output DC - 1.0 GHz 1.0 - 3.0 GHz 3.0 - 6.0 GHz 13 11 15 dB dB dB Reverse Isolation DC - 6.0 GHz 18 dB Output Power for 1 dB Compression (P1dB) DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz 15.5 15.0 13.0 dBm dBm dBm Output Third Order Intercept (IP3) DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz 32 30 28 24 dBm dBm dBm dBm Noise Figure DC - 6.0 GHz 4.5 dB Supply Current (Icq) 13.5 12.0 10.0 56 dB dB dB 0.008 0.012 0.016 74 Note: Data taken with broadband bias tee on device output. 8 - 10 Units DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB/ °C dB/ °C dB/ °C mA HMC311LP3 / 311LP3E v03.0907 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz 20 15 5 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 9 +25 C +85 C -40 C 0 1 2 3 FREQUENCY (GHz) 4 5 6 7 8 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) 8 Gain vs. Temperature -10 -15 -20 +25 C +85 C -40 C -5 -10 -15 -20 0 1 2 3 4 5 6 7 8 0 1 2 3 FREQUENCY (GHz) 4 5 6 7 8 FREQUENCY (GHz) Reverse Isolation vs. Temperature DRIVER & GAIN BLOCK AMPLIFIERS - SMT Gain & Return Loss Noise Figure vs. Temperature 0 10 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 -5 +25 C +85 C -40 C -10 -15 -20 7 6 5 4 3 2 +25C +85C -40C 1 -25 0 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 11 HMC311LP3 / 311LP3E v03.0907 Psat vs. Temperature 20 20 18 18 16 16 14 14 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 10 8 +25 C 10 +25 C +85 C -40 C 8 +85 C 6 4 -40 C 4 2 0 0 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE -6 -4 -2 0 2 4 6 8 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 INPUT POWER (dBm) 28 24 22 +25 C +85 C -40 C 14 12 10 0 1 2 3 4 5 FREQUENCY (GHz) 7 8 Pout Gain PAE -6 -4 -2 0 2 4 6 6 7 8 80 40 35 60 30 25 40 20 15 20 10 5 0 0 4.5 4.75 5 5.25 Vs(V) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 Icq (mA) IP3 (dBm) 26 GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 30 16 6 Gain, Power, Output IP3 & Supply Current vs. Supply Voltage @ 1 GHz 32 18 5 INPUT POWER (dBm) 34 20 4 Power Compression @ 6 GHz Power Compression @ 1 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 3 FREQUENCY (GHz) Output IP3 vs. Temperature 8 - 12 12 6 2 Pout (dBm), GAIN (dB), PAE (%) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 8 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz HMC311LP3 / 311LP3E v03.0907 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Collector Bias Voltage (Vcc) +7 Vdc RF Input Power (RFIN)(Vs = +5 Vdc) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 5.21 mW/°C above 85 °C) 0.339 W Thermal Resistance (junction to ground paddle) 192 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY DRIVER & GAIN BLOCK AMPLIFIERS - SMT 8 Absolute Maximum Ratings 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC311LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC311LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 311 XXXX [2] 311 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 13 HMC311LP3 / 311LP3E v03.0907 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 8 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Pin Descriptions Pin Number Function Description 1, 2, 4 - 9, 11 - 16 Interface Schematic N/C This pin may be connected to RF ground. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias Recommended Component Values Frequency (MHz) Component 8 - 14 50 900 1900 2200 2400 3500 5200 5800 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 3.3 nH 3.3 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311LP3 / 311LP3E v03.0907 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz 8 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Evaluation PCB J3 Pin Number Description 1, 2, 3 Vs 4, 5, 6 GND List of Materials for Evaluation PCB 106789 [1] Item Description J1 - J2 PC Mount SMA Connector J3 2 mm DC Header C1, C2 Capacitor, 0402 Pkg. C3 10,000 pF Capacitor, 0805 Pkg. R1 22 Ohm Resistor, 0805 Pkg. L1 Inductor, 0805 Pkg. U1 HMC311LP3 / HMC311LP3E PCB [2] 106493 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 15