Pan Jit BAS21W Surface mount switching diode Datasheet

DATA SHEET
BAS19W~BAS21W
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
120-250 Volts
POWER
SOT-323
200mWatts
Unit: inch (mm)
FEATURES
.087(2.2)
.070(1.8)
• Electrically Identical to Standard JEDEC
.054(1.35)
.045(1.15)
• High Conductance
.087(2.2)
.078(2.0)
• Surface mount package Ideally Suited for Automatic insertion
.004(.10)MIN.
• Fast switching speed.
• Both normal and Pb free product are available :
.006(.15)
.002(.05)
.056(1.40)
.047(1.20)
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANICAL DATA
.016(.40)
.078(.20)
Case: SOT-323, Plastic
.044(1.1)
.035(0.9)
.004(.10)MAX.
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.0052 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
P A R A M E TE R
S YM B O L
B A S 19W
B A S 20W
B A S 21W
A8
A 80
A 82
VR
100
150
200
V
V RM
120
200
250
V
M a rking C o d e
R e ve rse V o lta g e
P e a k R e ve rse V o lta g e
R e ctifie d C urre nt (A ve ra g e ), H a lf W a ve R e ctifica tio n w ith
R e sistive L o a d a nd f > = 5 0 H z
U N IT S
IO
200
mA
P e a k F o rw a rd S urg e C urre nt,1 .0 us
IF S M
2 .5
A
P o w e r D issip a tio n D e ra te A b o ve 2 5 O C
P TO T
200
mW
M a xim um F o rw a rd V o lta g e a t 0 .1 A
VF
1 .0
V
M a xim um D C R e ve rse C urre nt a t R a te d D C B lo cking V o lta g e
T J= 2 5 O C
IR
0 .1
uA
Typ ica l Junctio n C a p a cita nce ( N o te s1 )
CJ
5 .0
pF
M a xim um R e ve rse R e co ve ry (N o te s2 )
TR R
50
ns
R θ JA
625
T J, T S TG
-5 5 to + 1 5 0
M a xim um T he rm a l R e sista nce
O p e ra ting Junctio n a nd S to ra g e Te m p e ra ture R a ng e
O
C /W
O
C
SINGLE
NOTE:
1. CJ at VR=0, f=1MHZ
2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
STAD-MAR.03.2004
PAGE . 1
100
100
I R , LEAKAGE CURRENT, uA
FORWARD CURRENT, mA
1000
TJ =25OC
10
1.0
0.1
0.01
0
1.0
10
1.0
0.1
0.01
2.0
FORWARD VOLTAGE, VOLTS
Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE
P D , POWER DISSIPATION (mW)
DIODE CAPACITANCE, pF
4.5
3.0
1.5
2
4
6
REVERSE VOLTAGE, VOLTS
FIG. 3 TYPICAL JUNCTION CAPACITANCE
STAD-MAR.03.2004
200
O
6.0
0
100
T J , JUNCTION TEMPERATURE, C
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
0
0
8
400
300
200
100
0
50
100
150
200
O
AMBIENT TEMPERATURE( C)
FIG. 4 POWER DERATING CURVE
PAGE . 2
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