IRLHS6342PbF HEXFET® Power MOSFET VDS 30 V VGS ±12 V RDS(on) max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP VIEW 6 D D 1 D 2 G 3 D S D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Low RDSon (≤ 15.5mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 0.9 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity IRLHS6342TRPbF PQFN 2mm x 2mm Tape and Reel 4000 IRLHS6342TR2PbF PQFN 2mm x 2mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ±12 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 6.9 19 ID @ TC(Bottom)= 70°C Continuous Drain Current, VGS @ 10V 15 ID @ TC(Bottom) = 25°C IDM Continuous Drain Current, VGS @ 10V (Wirebond Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation PD @TA = 70°C TJ Linear Derating Factor Operating Junction and hi hi 12i TSTG Storage Temperature Range A 76 2.1 g V 8.7 c g Power Dissipation g Units 1.3 0.02 -55 to + 150 W W/°C °C Notes through are on page 2 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 22 12.0 ––– 15.5 VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– 0.5 ––– 15.0 ––– -4.2 19.5 1.1 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 12V VGS = -12V gfs Qg Forward Transconductance Total Gate Charge Gate-to-Source Charge 39 ––– ––– ––– 11 0.5 ––– ––– ––– Gate-to-Drain Charge ––– 4.6 ––– Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 2.1 4.9 13 ––– ––– ––– Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 19 13 1019 ––– ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– 97 70 ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Max. Units V Conditions VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 8.5A mΩ VGS = 2.5V, ID = 8.5A V VDS = VGS, ID = 10μA mV/°C e e S VDS = 10V, ID = 8.5A VDS = 15V nC VGS = 4.5V ID = 8.5A (See Fig. 6 & 17) Ω ns pF VDD = 15V, VGS = 4.5V ID = 8.5A RG=1.8Ω See Fig.18 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c d Typ. ––– Max. 14 Units mJ ––– 8.5 A Diode Characteristics Parameter Min. IS Continuous Source Current ISM (Body Diode) Pulsed Source Current ––– c (Body Diode) Diode Forward Voltage Reverse Recovery Time VSD trr Qrr Reverse Recovery Charge Forward Turn-On Time ton Typ. ––– Max. Units i 12 ––– ––– 76 ––– ––– ––– 11 1.2 17 Conditions MOSFET symbol D A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 8.5A, VGS = 0V TJ = 25°C, IF = 8.5A, VDD = 15V di/dt = 300 A/μs ––– 13 20 nC Time is dominated by parasitic Inductance G e S e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient (<10s) g g f Typ. ––– ––– ––– ––– f Max. 13 90 60 42 Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.39mH, RG = 50Ω, IAS = 8.5A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 12A by die-source to lead-frame bonding technology 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.0V 2.5V 2.0V 1.8V 1.5V 1.4V 1 1.4V BOTTOM 10 1.4V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 1 0.1 0.1 1 10 0.1 100 100 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics TJ = 150°C TJ = 25°C 10 VDS = 15V ≤60μs PULSE WIDTH 1.0 ID = 8.5A VGS = 4.5V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 8.5A C oss = C ds + C gd Ciss 1000 Coss Crss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 10 12.0 VDS= 24V VDS= 15V VDS= 6.0V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 4.5V 3.0V 2.5V 2.0V 1.8V 1.5V 1.4V www.irf.com © 2013 International Rectifier 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100μsec 1msec 10 Limited by Wire Bond 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 20 VGS(th) , Gate threshold Voltage (V) 1.6 18 Limited By Package 16 ID, Drain Current (A) DC Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 10msec 14 12 10 8 6 4 2 0 1.4 1.2 1.0 0.8 ID = 10μA ID = 25μA 0.6 ID = 250μA 0.4 ID = 1.0mA 0.2 ID = 1.0A 0.0 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 100 10 D = 0.50 0.20 0.10 0.05 1 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on) , Drain-to -Source On Resistance (mΩ) 30 ID = 8.5A 25 20 T J = 125°C 15 10 T J = 25°C 5 0 2 4 6 8 10 12 28 26 24 22 20 Vgs = 2.5V 18 16 14 Vgs = 4.5V 12 10 14 5 15 25 35 45 55 65 75 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 600 60 ID TOP 1.9A 3.4A BOTTOM 8.5A 50 500 Single Pulse Power (W) EAS , Single Pulse Avalanche Energy (mJ) 30 40 30 20 400 300 200 100 10 0 1E-5 0 25 50 75 100 125 150 1E-4 1E-3 Starting T J , Junction Temperature (°C) Driver Gate Drive + - P.W. D.U.T. ISD Waveform + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period * Reverse Recovery Current V DD D= Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - 1E+0 Fig 15. Typical Power vs. Time + 1E-1 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T 1E-2 + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01Ω tp Fig 18a. Unclamped Inductive Test Circuit V DS V GS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms www.irf.com © 2013 International Rectifier 10% VGS td(on) tr td(off) tf Fig 19b. Switching Time Waveforms Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF PQFN 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 2x2 Outline Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF PQFN 2x2 Outline Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF † Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level †† guidelines ) MS L1 PQFN 2mm x 2mm RoHS compliant † †† (per JE DE C J-S TD-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Revision History Date Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) 12/17/2013 • Updated Qual level from "Consumer" to "Industrial" on page 1, 9 • Updated data sheet with new IR corporate template IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013