MCR69-2, MCR69-3 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. • Glass-Passivated Junctions for Greater Parameter Stability and Reliability • Center-Gate Geometry for Uniform Current Spreading Enabling http://onsemi.com High Discharge Current SCRs 25 AMPERES RMS 50 thru 100 VOLTS • Small Rugged, Thermowatt Package Constructed for Low Thermal • • Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 750 Amps Device Marking: Logo, Device Type, e.g., MCR69–2, Date Code G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = 40 to +125°C, Gate Open) MCR69–2 MCR69–3 * Peak Discharge Current(2) Symbol A Value VDRM, VRRM Volts 50 100 4 ITM 750 Amps On-State RMS Current (180° Conduction Angles; TC = 85°C) IT(RMS) 25 Amps Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) 16 Amps Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ITSM 300 Amps 1 I2t 375 A2s Forward Peak Gate Current (t ≤ 1.0 µs, TC = 85°C) IGM 2.0 Amps Forward Peak Gate Power (t ≤ 1.0 µs, TC = 85°C) PGM 20 Watts PG(AV) 0.5 Watt TJ – 40 to +125 °C Tstg – 40 to +150 °C — 8.0 in. lb. Circuit Fusing Considerations (t = 8.3 ms) Forward Average Gate Power (t = 8.3 ms, TC = 85°C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque February, 2000 – Rev. 0 2 3 TO–220AB CASE 221A STYLE 3 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, t w is defined as 5 time constants of an exponentially decaying current pulse. (3) Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value, TJ = 125°C. Semiconductor Components Industries, LLC, 1999 K Unit 1 Device Package Shipping MCR69–2 TO220AB 500/Box MCR69–3 TO220AB 500/Box Publication Order Number: MCR69/D MCR69–2, MCR69–3 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 1.5 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Characteristic Min Typ Max Unit — — — — 10 2.0 µA mA — — — 6.0 1.8 — OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TJ = 25°C TJ = 125°C ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 50 A)(1) (ITM = 750 A, tw = 1 ms)(2) VTM Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 2.0 7.0 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT — 0.65 1.5 Volts Gate Non–Trigger Voltage (VD = 12 Vdc, RL = 100 Ω, TJ = 125°C) VGD 0.2 0.40 — Volts Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH 3.0 15 50 mA Latching Current (VD = 12 Vdc, IG = 150 mA) IL — — 60 mA Gate Controlled Turn-On Time(3) (VD = Rated VDRM, IG = 150 mA) (ITM = 50 A Peak) tgt — 1.0 — µs Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C) dv/dt 10 — — V/µs Critical Rate-of-Rise of On-State Current IG = 150 mA di/dt — — 100 A/µs DYNAMIC CHARACTERISTICS p p TJ = 125°C (1) Pulse duration 300 µs, duty cycle 2%. (2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. (3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. http://onsemi.com 2 MCR69–2, MCR69–3 Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage Anode + VTM on state Peak Forward Blocking Current VRRM IRRM Peak Repetitive Off State Reverse Voltage VTM IH Peak On State Voltage IH IRRM at VRRM Peak Reverse Blocking Current Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) I TM, PEAK DISCHARGE CURRENT (AMPS) Anode – NORMALIZED PEAK CURRENT 1000 300 200 100 50 20 0.5 ITM tw tw = 5 time constants 1.0 0.8 0.6 0.4 0.2 0 5.0 2.0 1.0 10 20 25 50 tw, PULSE CURRENT DURATION (ms) 125 120 115 110 dc 100 95 90 80 75 8.0 12 100 125 32 Half Wave 24 dc 16 8.0 Half Wave 85 4.0 75 Figure 2. Peak Capacitor Discharge Current Derating P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) Figure 1. Peak Capacitor Discharge Current 105 50 TC, CASE TEMPERATURE (°C) 16 TJ = 125°C 0 0 20 4.0 8.0 12 16 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 3. Current Derating Figure 4. Maximum Power Dissipation http://onsemi.com 3 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MCR69–2, MCR69–3 1 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k t, TIME (ms) Figure 5. Thermal Response NORMALIZED GATE TRIGGER VOLTAGE 5.0 VD = 12 Volts RL = 100 Ω 3.0 2.0 1.0 0.5 0.3 0.2 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 1.4 1.0 0.8 0.5 –60 140 VD = 12 Volts RL = 100 Ω 1.2 –40 –20 0 20 2.0 VD = 12 Volts ITM = 100 mA 1.0 0.8 0.5 –40 –20 60 80 100 Figure 7. Gate Trigger Voltage 3.0 0.3 –60 40 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate Trigger Current NORMALIZED HOLD CURRENT NORMALIZED GATE TRIGGER CURRENT 10 0 40 20 60 80 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Holding Current http://onsemi.com 4 100 120 140 120 140 MCR69–2, MCR69–3 PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z –T– B F T SEATING PLANE C S 4 Q A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 5 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MCR69–2, MCR69–3 Notes http://onsemi.com 6 MCR69–2, MCR69–3 Notes http://onsemi.com 7 MCR69–2, MCR69–3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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