TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 32 nC) • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G G DS TO-220F TO-220 GD S FDP Series FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP16N50 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR FDPF16N50 500 V 16 9.6 (Note 1) Unit 16 * 9.6 * 64 * 64 A A A ±30 V (Note 2) 780 mJ Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 20 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (TC = 25°C) - Derate above 25°C 200 1.59 52 0.41 W W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP16N50 FDPF16N50 Unit RθJC Thermal Resistance, Junction-to-Case 0.63 2.4 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2007 Fairchild Semiconductor Corporation FDP16N50 / FDPF16N50 Rev. B 1 www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET February 2007 Device Marking Device Package Reel Size Tape Width Quantity FDP16N50 FDP16N50 TO-220 - - 50 FDPF16N50 FDPF16N50 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.31 0.38 Ω -- 23 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 8A gFS Forward Transconductance VDS = 40V, ID = 8A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 1495 1945 pF -- 235 310 pF -- 20 30 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 16A RG = 25Ω (Note 4, 5) VDS = 400V, ID = 16A VGS = 10V (Note 4, 5) -- 40 90 ns -- 150 310 ns -- 65 140 ns -- 80 170 ns -- 32 45 nC -- 8.5 -- nC -- 14 -- nC 9.2 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 37 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 16A -- -- 1.4 V trr Reverse Recovery Time 490 -- ns Reverse Recovery Charge VGS = 0V, IS = 16A dIF/dt =100A/µs -- Qrr -- 5.0 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 2 10 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 o 1 150 C 10 o 25 C o -55 C * Notes : 1. 250µs Pulse Test -1 * Notes : 1. VDS = 40V o 10 2. TC = 25 C 2. 250µs Pulse Test 0 -1 0 10 10 1 10 2 10 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.6 0.5 VGS = 10V 0.4 VGS = 20V 0.3 o 1 10 150oC o 25 C * Notes : 1. VGS = 0V 2. 250µs Pulse Test * Note : TJ = 25 C 0 0.2 10 0 5 10 15 20 25 30 35 0.2 40 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 4000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] Coss 2000 Ciss 1000 VDS = 100V 10 3000 * Note : 1. VGS = 0 V Crss 2. f = 1 MHz VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 16A 0 -1 10 0 10 0 1 10 0 VDS, Drain-Source Voltage [V] 20 30 40 QG, Total Gate Charge [nC] 3 FDP16N50 / FDPF16N50 Rev. B 10 www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250µA 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 8 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 o TJ, Junction Temperature [ C] -50 0 50 100 150 Figure 9-1. Maximum Safe Operating Area - FDP16N50 Figure 9-2. Maximum Safe Operating Area - FDPF16N50 2 2 10 10 1 ms 10 ms 100 ms DC 1 10 Operation in This Area is Limited by R DS(on) 0 10 10 µs ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs -1 100 µs 1 10 1 ms 10 ms Operation in This Area is Limited by R DS(on) 0 10 100 ms DC -1 * Notes : 10 * Notes : 10 o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -2 10 200 o TJ, Junction Temperature [ C] -2 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Currentvs. Case Temperature 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 4 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP16N50 / FDPF16N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP16N50 ZθJC(t), Thermal Response 10 0 D = 0 .5 0 .2 10 -1 PDM 0 .1 t1 0 .0 5 t2 0 .0 2 * N o te s : o 0 .0 1 10 1 . Z θ J C ( t) = 0 .6 3 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11-2. Transient Thermal Response Curve - FDPF16N50 ZθJC(t), Thermal Response 10 D = 0 .5 0 0 .2 0 .1 10 PDM 0 .0 5 -1 t1 0 .0 2 t2 0 .0 1 * N o te s : o 10 -2 10 1 . Z θ J C ( t) = 2 .4 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 5 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 8 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 9 FDP16N50 / FDPF16N50 Rev. B 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 10 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET TRADEMARKS