MMBTA63LT1G, MMBTA64LT1G Darlington Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 BASE 1 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCES −30 Vdc Collector −Base Voltage VCBO −30 Vdc Emitter −Base Voltage VEBO −10 Vdc IC −500 mAdc Collector Current − Continuous EMITTER 2 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD RqJA Max Unit 225 1.8 mW mW/°C 556 °C/W MARKING DIAGRAM 2x M G G PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 2x = Device Code x = U for MMBTA63LT1 x = V for MMBTA64LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBTA63LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBTA64LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 4 1 Publication Order Number: MMBTA63LT1/D MMBTA63LT1G, MMBTA64LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −30 − − −100 − −100 5,000 10,000 10,000 20,000 − − − − − −1.5 − −2.0 125 − Unit OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (IC = −100 mAdc) Collector Cutoff Current (VCB = −30 Vdc) ICBO Emitter Cutoff Current (VEB = −10 Vdc) IEBO Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE Collector −Emitter Saturation Voltage (IC = −100 mAdc, IB = −0.1 mAdc) VCE(sat) Base − Emitter On Voltage (IC = −100 mAdc, VCE = −5.0 Vdc) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) fT 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MHz MMBTA63LT1G, MMBTA64LT1G hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 -10 V 30 25°C VCE = -2.0 V -5.0 V 20 10 7.0 5.0 -55°C 3.0 2.0 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -2.0 TA = 25°C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) -1.6 -1.2 VBE(on) @ VCE = -5.0 V -0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mA) -100 -200 -300 -2.0 TA = 25°C -1.8 -1.6 IC = -10 mA -50 mA -100 mA -175 mA -1.4 -1.2 -1.0 -0.8 -0.6 -0.1-0.2 -0.5 -1 -2 Figure 3. “On” Voltage 1 VCE = -5.0 V f = 100 MHz TA = 25°C IC, COLLECTOR CURRENT (A) |h FE |, HIGH FREQUENCY CURRENT GAIN -5 -10 -20 -50 -100-200-500 -1K-2K -5K-10K IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 10 4.0 3.0 2.0 -300 mA 1.0 0.4 0.2 0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 10 ms 0.1 100 ms 1s 0.01 Thermal Limit Single Pulse Test @ TA = 25°C 0.001 0.01 -1K 1 ms IC, COLLECTOR CURRENT (mA) 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 4. High Frequency Current Gain Figure 5. Safe Operating Area http://onsemi.com 3 100 MMBTA63LT1G, MMBTA64LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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