AP9930GM Pb Free Plating Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS(ON) P1S/P2S P1G LCD Monitor Inverter N1D/P1D 5.5A P-CH BVDSS N1G Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. 33mΩ ID N2G N1S/N2S SO-8 30V -30V RDS(ON) 55mΩ ID -4.1A P1S P2S P1G P2G P2N2D P1N1D The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. N2G N1G Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ N2S N1S Absolute Maximum Ratings Units P-channel 30 -30 V ±25 ±25 V Continuous Drain Current 3 5.5 -4.1 A Continuous Drain Current 3 4.4 -3.3 A 20 -20 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 90 ℃/W 200923043 AP9930GM o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.04 - V/℃ VGS=10V, ID=5A - - 33 mΩ VGS=4.5V, ID=3A - - 60 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=5A - 5.2 - S Drain-Source Leakage Current (Tj=25 C) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±25V - - ±100 nA ID=5A - 7 10 nC BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS IGSS 2 VGS=0V, ID=250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=15V - 7 - ns tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=10V - 18 - ns tf Fall Time RD=15Ω - 8 - ns Ciss Input Capacitance VGS=0V - 600 960 pF Coss Output Capacitance VDS=25V - 229.8 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 94 - pF Min. Typ. IS=1.2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=1.7A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC AP9930GM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -30 - - V - -0.04 - V/℃ VGS=-10V, ID=-4A - - 55 mΩ VGS=-4.5V, ID=-2A - - 100 mΩ VDS=VGS, ID=-250uA -1 - -3 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) 2 Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS VGS=0V, ID=-250uA Max. Units VDS=-10V, ID=-5A - 4.8 - S o VDS=-30V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±25V - - ±100 nA Drain-Source Leakage Current (Tj=25 C) 2 Qg Total Gate Charge ID=-5A - 7 11 nC Qgs Gate-Source Charge VDS=-15V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4 - nC VDS=-15V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 8 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 20 - ns tf Fall Time RD=15Ω - 18 - ns Ciss Input Capacitance VGS=0V - 490 790 pF Coss Output Capacitance VDS=-25V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-1.7A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 15 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 186 ℃/W when mounted on Min. copper pad. AP9930GM N-Channel 25 20 T A =25 o C 10V 8.0V 6.0V 4.0V 15 ID , Drain Current (A) 20 ID , Drain Current (A) T A =150 o C 10V 8.0V 6.0V 4.0V 15 10 V G =3.0V 10 V G =3.0V 5 5 0 0 0 1 2 3 4 5 6 0 2 3 4 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 6 1.6 45 I D =3A T A =25 ℃ I D =5A V G =10V 1.4 Normalized RDS(ON) 40 RDS(ON) (mΩ ) 1 V DS , Drain-to-Source Voltage (V) 35 30 1.2 1.0 0.8 25 0.6 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10.00 1.8 1.00 T j =25 o C IS(A) VGS(th) (V) T j =150 o C 1.6 1.4 0.10 1.2 1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 T j ,Junction Temperature ( 150 o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9930GM N-Channel f=1.0MHz VGS , Gate to Source Voltage (V) 12 1000 C iss I D =5A V DS =15V 10 C oss C (pF) 8 6 C rss 100 4 2 0 10 0 4 8 12 16 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 ID (A) 100us 1ms 1 10ms 100ms 1s T A =25 o C Single Pulse 0.1 DC 0.2 0.1 0.1 0.05 P DM 0.02 t 0.01 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 186℃ ℃ /W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q AP9930GM P-Channel 25 20 o T A =25 C -10V -8.0V -6.0V -8.0V 20 15 -6.0V -ID , Drain Current (A) -ID , Drain Current (A) o T A =150 C -10V 15 -4.0V 10 10 -4.0V 5 5 V G =-3.0V V G =-3.0V 0 0 0 1 2 3 4 5 0 6 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 95 1.6 I D =-2A T A =25 ℃ I D = -4 A V G = -10 V 1.4 Normalized R DS(ON) RDS(ON) (mΩ ) 1 75 55 1.2 1 0.8 35 0.6 2 4 6 8 10 -50 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 10.00 o T j =150 C T j =25 o C 2 -IS(A) -VGS(th) (V) 1.00 1.5 0.10 0.01 1 0.1 0.3 0.5 0.7 0.9 1.1 -V SD ,Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP9930GM P-Channel f=1.0MHz 16 1000 -VGS , Gate to Source Voltage (V) I D =-5A V DS =-15V C iss 12 C (pF) C oss 8 C rss 100 4 10 0 0 4 8 12 1 16 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 10 100us ID (A) 9 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1ms 1 10ms 0.1 100ms 1s T A =25 o C Single Pulse DC 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta 0.01 Rthja = 186℃ ℃ /W 0.001 0.1 1 10 100 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q