Panasonic MA3J741 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3J741
Silicon epitaxial planar type
Unit : mm
For switching circuits
2.1 ± 0.1
1.25 ± 0.1
• S-mini type package (3-pin) of MA3X704A
• Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current IR
0.3 − 0
2.0 ± 0.2
1.3 ± 0.1
0.65 0.65
■ Features
1
3
0.9 ± 0.1
+ 0.1
0.15 − 0.05
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.425
+ 0.1
0.425
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Forward current (DC)
IF
30
mA
Peak forward current
IFM
150
mA
Junction temperature
Tj
125
°C
Marking Symbol: M1L
Storage temperature
Tstg
−55 to +125
°C
Internal Connection
1 : Anode
2 : NC
3 : Cathode
EIAJ : SC-70
Flat S-Mini Type Package (3-pin)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
300
nA
Forward voltage (DC)
VF1
IF = 1 mA
0.4
V
VF2
IF = 30 mA
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1
Reverse recovery time*
trr
Detection efficiency
η
V
1.5
pF
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1
ns
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
MA3J741
Schottky Barrier Diodes (SBD)
IF  V F
IR  VR
VF  Ta
103
103
1.0
0.9
75°C 25°C
102
0.8
− 20°C
10
1
10−1
0.7
IF = 30 mA
0.6
10 mA
0.5
0.4
0.3
1 mA
0.2
Reverse current IR (µA)
Ta = 125°C
Forward voltage VF (V)
Forward current IF (mA)
102
Ta = 125°C
10
75°C
1
25°C
10−1
0.1
10−2
0
0.2
0.4
0.6
0.8
1.0
10−2
0
−40
1.2
Forward voltage VF (V)
0
40
80
Ct  VR
IR  T a
VR = 30 V
15 V
Reverse current IR (µA)
Terminal capacitance Ct (pF)
2
1
0
5
10
15
20
25
Reverse voltage VR (V)
30
10
1
10−1
10−2
−40
0
40
80
120
160
Ambient temperature Ta (°C)
0
5
10
15
20
25
Reverse voltage VR (V)
102
f = 1 MHz
Ta = 25°C
2
160
Ambient temperature Ta (°C)
3
0
120
200
30