Renesas HAT2165H Silicon n channel power mos fet power switching Datasheet

HAT2165H
Silicon N Channel Power MOS FET Power Switching
REJ03G0004-0500Z
(Previous ADE-208-1632C (Z))
Rev.5.00
Apr.09.2003
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.5 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5
5
D
4
G
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
Rev.5.00, Apr.09.2003, page 1 of 10
3
1 2
HAT2165H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
55
A
Drain peak current
ID(pulse)Note1
220
A
Body-drain diode reverse drain current
IDR
55
A
Note 2
Avalanche current
IAP
30
A
Avalanche energy
EAR Note 2
90
mJ
Note3
30
W
Channel dissipation
Pch
Channel to Case Thermal Resistance
θch-C
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Rev.5.00, Apr.09.2003, page 2 of 10
HAT2165H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS ± 20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
± 10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
2.5
3.3
mΩ
ID = 27.5 A, VGS = 10 V Note4
resistance
RDS(on)
—
3.4
5.3
mΩ
ID = 27.5 A, VGS = 4.5 V
Forward transfer admittance
|yfs|
60
100
—
S
ID = 27.5 A, VDS = 10 V Note4
Input capacitance
Ciss
—
5180
—
pF
VDS = 10 V
Output capacitance
Coss
—
1200
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
380
—
pF
f = 1 MHz
Gate Resistance
Rg
—
0.5
—
Ω
Total gate charge
Qg
—
33
—
nc
30
VDD = 10 V
Gate to source charge
Qgs
—
15
—
nc
VGS = 4.5 V
Gate to drain charge
Qgd
—
7.1
—
nc
ID = 55 A
Turn-on delay time
td(on)
—
13
—
ns
VGS = 10 V, ID = 27.5 A
Rise time
tr
—
65
—
ns
VDD ≅ 10 V
Turn-off delay time
td(off)
—
60
—
ns
RL = 0.36 Ω
Fall time
tf
—
9.5
—
ns
Rg = 4.7 Ω
Body–drain diode forward
voltage
VDF
—
0.81
1.06
V
IF = 55 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
trr
—
40
—
ns
IF = 55 A, VGS = 0
diF/ dt = 100 A/ µs
Notes: 4. Pulse test
Rev.5.00, Apr.09.2003, page 3 of 10
Note4
HAT2165H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
I D (A)
Pch (W)
40
20
10
0
10
Op
s
era
0m
s
n
1 Operation in
this area is
limited by R DS(on)
50
100
150
200
Tc (°C)
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
10 V
4.5 V
Typical Transfer Characteristics
100
Pulse Test
V DS = 10 V
Pulse Test
3.0 V
2.8 V
60
2.6 V
40
2.4 V
20
ID
(A)
80
Drain Current
I D (A)
1m
=1
tio
Typical Output Characteristics
Drain Current
DC
0.1
Case Temperature
100
10
µ
0µ s
s
10
PW
Drain Current
Channel Dissipation
30
100
80
60
40
20
25°C
Tc = 75°C
-25°C
VGS = 2.2 V
0
2
4
6
Drain to Source Voltage
Rev.5.00, Apr.09.2003, page 4 of 10
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
250
200
150
I D = 50 A
100
20 A
50
10 A
0
Static Drain to Source on State Resistance
R DS(on) (m Ω)
Pulse Test
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
6
I D = 10 A, 20 A
50 A
4 V GS = 4.5 V
10 A, 20 A, 50 A
2
10 V
0
-25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.5.00, Apr.09.2003, page 5 of 10
Drain to Source On State Resistance
R DS(on) (m Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
VGS = 4.5 V
10 V
2
1
1
3
10
100 300
30
Drain Current I D (A)
1000
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Voltage
V DS(on) (mV)
HAT2165H
1000
300
100
Tc = -25°C
30
75°C
10
25°C
3
1
V DS = 10 V
Pulse Test
0.3
0.1
0.1
0.3
1
3
10
30
Drain Current I D (A)
100
HAT2165H
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
10
0.1
3000
1000
Coss
300
Crss
100
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
30
VGS = 0
f = 1 MHz
10
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
0
5
V DD = 25 V
12
8
20
V DS
10
10 V
4
5V
0
20
40
60
80
Gate Charge Qg (nc)
Rev.5.00, Apr.09.2003, page 6 of 10
20
25
30
0
100
1000
Switching Time t (ns)
30
V GS
VDD = 5 V
10 V
25 V
V GS (V)
I D = 55 A
15
Switching Characteristics
16
Gate to Source Voltage
Drain to Source Voltage
V DS (V)
Dynamic Input Characteristics
40
10
Drain to Source Voltage V DS (V)
300
t d(off)
100
tf
30
t d(on)
10
tr
3
V GS = 10 V , VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
0.1 0.2 0.5 1
2 5 10 20 50 100
Drain Current I D (A)
HAT2165H
Maximum Avalanche Energy vs.
Channel Temperature Derating
(A)
100
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR
80
10 V
V GS = 0
5V
60
40
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
100
I AP = 30 A
V DD = 15 V
duty < 0.1 %
Rg > 50 Ω
80
60
40
20
0
25
V SD (V)
50
75
100
125
150
Channel Temperature Tch (˚C)
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
V DS
Monitor
1
2
I AP
Monitor
L • IAP2 •
VDSS
VDSS - V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
Rev.5.00, Apr.09.2003, page 7 of 10
VDD
HAT2165H
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch - c(t) = γs (t) · θ ch - c
θ ch - c = 4.17°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
D=
e
uls
PW
p
ot
T
h
0.01
10 µ
1s
PW
T
100 µ
1m
100 m
10 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.5.00, Apr.09.2003, page 8 of 10
tr
10%
90%
td(off)
tf
HAT2165H
Package Dimensions
As of January, 2003
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0˚ – 8˚
+0.25
+0.05
*0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
*0.40 ± 0.06
*Ni/Pd/Au plating
Rev.5.00, Apr.09.2003, page 9 of 10
0.25 M
Package Code
JEDEC
JEITA
Mass (reference value)
LFPAK
—
—
0.080 g
HAT2165H
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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