PNP DIGITAL TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HA114T █ APPLICATIONS Switching Circuit，Interface Circuit. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92S T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-50V V EBO ——Emitter-Base Voltage………………………………-5V I C ——Collector Current……………………………………-100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -50 V IC=-50μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -50 V IC=-1mA, BVEBO Emitter-Base Breakdown Voltage -5 V IE=-50μA，IC=0 IB=0 ICBO Collector Cut-off Current -0.5 μA VCB=-50V, IE=0 IEBO Emitter Cut-off Current -0.5 μA VEB=-4V, IC=0 HFE DC Current Gain VCE(sat) 100 250 Collector- Emitter Saturation Voltage VCE=-5V, IC=-1mA 600 -0.3 V IC=-10mA, IB=-1mA VI（off） Input Off Voltage -0.4 -0.55 -0.8 V VCE=-5V, IC=-0.1mA VI（on） Input On Voltage R1 Input Resistor Current Gain-Bandwidth Product fT Cob Output Capacitance -0.7 7.0 -1.2 10 250 3.7 -3.0 13 V KΩ MHz pF VCE=-0.2V, IC=-10mA VCE=-10V, IC=-5mA VCB=-10V, f=1MHz Shantou Huashan Electronic Devices Co.,Ltd. Fig1. DC Current Gain HA114T Fig2. Collector-Emitter Saturation Voltage