HUASHAN HA114T Pnp silicon transistor Datasheet

PNP DIGITAL TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HA114T
█ APPLICATIONS
Switching Circuit,Interface Circuit.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92S
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………300mW
1―Emitter,E
2―Collector,C
3―Base,B
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
V EBO ——Emitter-Base Voltage………………………………-5V
I C ——Collector Current……………………………………-100mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
-50
V
IC=-50μA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
-50
V
IC=-1mA,
BVEBO
Emitter-Base Breakdown Voltage
-5
V
IE=-50μA,IC=0
IB=0
ICBO
Collector Cut-off Current
-0.5
μA
VCB=-50V, IE=0
IEBO
Emitter Cut-off Current
-0.5
μA
VEB=-4V, IC=0
HFE
DC Current Gain
VCE(sat)
100
250
Collector- Emitter Saturation Voltage
VCE=-5V, IC=-1mA
600
-0.3
V
IC=-10mA, IB=-1mA
VI(off) Input Off Voltage
-0.4
-0.55
-0.8
V
VCE=-5V, IC=-0.1mA
VI(on) Input On Voltage
R1
Input Resistor
Current Gain-Bandwidth Product
fT
Cob
Output Capacitance
-0.7
7.0
-1.2
10
250
3.7
-3.0
13
V
KΩ
MHz
pF
VCE=-0.2V, IC=-10mA
VCE=-10V, IC=-5mA
VCB=-10V, f=1MHz
Shantou Huashan Electronic Devices Co.,Ltd.
Fig1. DC Current Gain
HA114T
Fig2. Collector-Emitter Saturation Voltage
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