NEC NE32584C-T1 Ultra low noise pseudomorphic hj fet Datasheet

ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
NE32584C
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
FEATURES
1.2
• HIGH ASSOCIATED GAIN:
12.5 dB Typical at 12 GHz
24
21
• LG ≤ 0.20 µm, WG = 200 µm
• LOW COST METAL CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The NE32584C is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume consumer and industrial applications.
Noise Figure, NF (dB)
1.0
GA
0.8
18
0.6
15
12
0.4
NF
0.2
Associated Gain, GA (dB)
• VERY LOW NOISE FIGURE:
0.45 dB Typical at 12 GHz
9
6
0
2
6
4
8
10
20
30
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
PART NUMBER
NE32584C
PACKAGE OUTLINE
SYMBOLS
1
PARAMETERS AND CONDITIONS
84C
UNITS
NF
Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
GA 1
Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
IDSS
Saturated Drain Current, VDS = 2 V,VGS = 0 V
MIN
TYP
MAX
0.45
0.55
11.0
12.5
mA
20
60
90
VP
Pinch-off Voltage, VDS = 2 V, IDS = 100 µA
V
-2.0
-0.7
-0.2
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
60
µA
0.5
RTH (CH-A)
Thermal Resistance (Channel to Ambient)
°C/W
750
RTH (CH-C)
Thermal Resistance (Channel to Case)
°C/W
IGSO
Gate to Source Leakage Current, VGS = -3 V
10.0
350
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
NE32584C
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Source Voltage
V
4.0
VGS
Gate to Source Voltage
V
-3.0
IDS
Drain Current
mA
IDSS
IGRF
Gate Current
µA
100
TCH
Channel Temperature
°C
TSTG
Storage Temperature
PT
Total Power Dissipation
VDS = 2 V, ID = 10 mA
NFOPT
GA
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
2
0.29
20.0
0.86
22
0.27
4
0.30
18.3
0.76
45
0.25
6
0.33
16.5
0.69
70
0.18
150
8
0.36
15.0
0.63
96
0.11
°C
-65 to +150
10
0.40
13.6
0.59
122
0.08
mW
165
12
0.45
12.5
0.54
147
0.04
14
0.54
12.0
0.48
171
0.04
16
0.68
11.8
0.40
-165
0.05
18
0.85
11.5
0.31
-144
0.06
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
ΓOPT
FREQ.
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
150
Drain Current, ID (mA)
Total Power Dissipation, PT (mW)
TYPICAL NOISE PARAMETERS (TA = 25°C)
100
50
VGS = 0 V
60
-0.2 V
40
-0.4 V
20
-0.6 V
-0.8 V
100
50
200
150
0
Ambient Temperature, TA (°C)
Drain to Source Voltage, VDS (V)
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
NOISE FIGURE AND ASSOCIATED GAIN
vs. DRAIN CURRENT
24
VDS = 2 V
f = 12 GHz
16
1.0
12
0.5
8
14
GA
13
Noise Figure, NF (dB)
20
GA
Associated Gain, GA (dB)
VDS = 2 V
ID = 10 mA
Noise Figure, NF (dB)
3.0
1.5
12
2.0
11
1.5
10
1.0
0.5
NF
NF
0
4
1
2
4
6
8 10
Frequency, f (GHz)
14
20
30
0
10
20
Drain Current, ID (mA)
30
Associated Gain, GA (dB)
0
NE32584C
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
j50
+120˚
j100
j25
+90˚
5
+60˚
4
+30˚
3
+150˚
j10
10
0
2
S11
20 GHz
S22
20 GHz
25
50
1
100
S22
.1 GHz
S11
.1 GHz
-j10
S12
.1 GHz
S21
±180˚ .1 GHz
.1
.06
S21
20 GHz
-150˚
0˚
-30˚
S12
20 GHz
-j25
-j100
Coordinates in Ohms
Frequency in GHz
(VDS = 2 V, IDS = 10 mA)
-j50
-60˚
-120˚
-90˚
NE32584C
VDS = 2 V, IDS = 10 mA
FREQUENCY
S11
S21
(GHz)
MAG
ANG
0.100
0.200
0.500
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
11.500
12.000
13.000
14.000
15.000
16.000
17.000
18.000
1.001
1.001
0.998
0.989
0.967
0.943
0.907
0.857
0.800
0.755
0.725
0.683
0.663
0.585
0.565
0.551
0.548
0.560
0.565
0.565
0.575
-1.75
-3.60
-8.95
-17.72
-34.63
-50.81
-66.71
-81.86
-96.39
-110.25
-124.55
-138.37
-154.60
178.24
168.24
148.32
129.66
112.17
94.50
76.97
60.33
MAG
5.202
5.189
5.178
5.128
5.013
4.865
4.703
4.493
4.297
4.143
4.068
3.994
4.017
3.849
3.790
3.720
3.669
3.652
3.557
3.448
3.357
S12
ANG
178.07
176.33
170.78
161.98
145.12
128.82
112.71
97.04
82.71
69.20
55.99
42.58
28.11
6.85
-0.46
-13.97
-28.93
-44.37
-60.11
-74.93
-89.44
MAG
0.001
0.003
0.008
0.015
0.030
0.043
0.054
0.062
0.069
0.075
0.081
0.084
0.089
0.091
0.090
0.090
0.089
0.087
0.085
0.084
0.082
S22
ANG
MAG
ANG
83.90
86.02
83.30
76.85
64.62
53.33
42.06
31.40
21.97
13.52
5.09
-3.80
-12.63
-26.79
-31.63
-41.14
-52.52
-64.18
-76.05
-89.05
-103.35
0.587
0.585
0.585
0.581
0.576
0.567
0.554
0.531
0.503
0.483
0.470
0.453
0.431
0.359
0.335
0.300
0.281
0.276
0.274
0.259
0.263
-1.59
-3.13
-7.50
-14.91
-28.90
-42.28
-55.03
-66.77
-77.55
-87.72
-97.81
-106.93
-116.85
-134.35
-140.87
-157.16
-173.11
171.08
154.07
135.78
116.62
K
MAG
-0.075
-0.025
0.047
0.118
0.188
0.235
0.312
0.426
0.541
0.618
0.646
0.724
0.734
0.900
0.960
1.000
1.029
1.025
1.052
1.101
1.120
37.162
32.380
28.111
25.339
22.230
20.536
19.400
18.601
17.943
17.423
17.009
16.771
16.545
16.263
16.244
16.163
15.113
15.253
14.824
14.196
14.012
(dB)
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE32584C
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
j50
+120˚
j100
j25
+90˚
10
+60˚
8
+30˚
6
+150˚
j10
4
S11
20 GHz
10
0
25
50
2
100
S22
20 GHz
S22
.1 GHz
±180˚
S11
.1 GHz
.02
S21
.1 GHz
.06
S21
20 GHz
-j10
-30˚
-150˚
-j25
S12
20 GHz
-j100
-120˚
Coordinates in Ohms
Frequency in GHz
(VDS = 2 V, IDS = 20 mA)
-j50
.1 0˚
S12
.1 GHz
-60˚
-90˚
NE32584C
VDS = 2 V, IDS = 20 mA
FREQUENCY
S11
(GHz)
0.100
0.200
0.500
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
11.000
12.000
13.000
14.000
15.000
16.000
17.000
18.000
S21
MAG
ANG
1.001
1.000
0.997
0.987
0.958
0.925
0.879
0.821
0.757
0.708
0.674
0.628
0.605
0.549
0.513
0.504
0.504
0.517
0.527
0.530
0.543
-1.81
-3.77
-9.43
-18.65
-36.35
-53.13
-69.42
-84.79
-99.35
-113.22
-127.54
-141.15
-157.21
-174.62
165.35
145.18
126.44
109.11
91.65
74.05
57.36
S12
MAG
ANG
6.552
6.531
6.511
6.432
6.243
5.999
5.734
5.417
5.121
4.892
4.754
4.617
4.599
4.503
4.291
4.193
4.123
4.106
4.001
3.888
3.785
178.03
176.09
170.33
161.14
143.49
126.61
110.09
94.24
79.85
66.26
53.02
39.77
25.65
11.83
-2.24
-15.42
-29.96
-45.03
-60.55
-75.22
-89.66
S22
K
MAG
ANG
MAG
ANG
0.001
0.003
0.007
0.014
0.027
0.038
0.048
0.056
0.062
0.068
0.074
0.078
0.083
0.086
0.087
0.087
0.088
0.087
0.086
0.085
0.083
84.76
86.79
83.69
77.38
65.71
55.04
44.64
34.90
26.33
18.60
10.86
2.80
-5.30
-14.51
-23.36
-32.46
-43.35
-54.72
-66.36
-79.11
-93.10
0.509
0.507
0.506
0.502
0.496
0.487
0.474
0.454
0.430
0.413
0.401
0.389
0.370
0.330
0.283
0.248
0.229
0.225
0.224
0.208
0.212
-1.76
-3.19
-7.53
-14.91
-28.84
-41.96
-54.20
-65.25
-75.31
-84.85
-94.21
-102.27
-111.19
-121.08
-133.16
-149.27
-165.01
179.28
161.59
142.58
121.91
MAG
(dB)
-0.078
0.011
0.063
0.134
0.232
0.303
0.397
0.519
0.646
0.723
0.754
0.826
0.836
0.927
1.017
1.052
1.061
1.050
1.058
1.098
1.114
38.164
33.379
29.685
26.622
23.640
21.983
20.772
19.856
19.170
18.570
18.078
17.723
17.436
17.190
16.128
15.439
15.202
15.376
15.203
14.697
14.536
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE32584C
NE32584C NONLINEAR MODEL
SCHEMATIC
CGD_PKG
0.001pF
LD
LD_PKG
RD_PKG
0.3nH
0.2 ohms
DRAIN
0.4nH
Q1
RG_PKG
LG_PKG
GATE
0.28nH
0.5 ohms
LG
0.55nH
CCD_PKG
CCG_PKG
0.14pF
0.1pF
LS_PKG
0.095nH
RS_PKG
0.2 ohms
CSG_PKG
CSD_PKG
0.01pF
0.01pF
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
VTO
-0.6723
RG
3
VTOSC
0
RD
2
ALPHA
4
RS
2
BETA
0.115
RGMET
0
GAMMA
0.08
KF
0
GAMMADC
0.07
AF
1
Q
2
TNOM
27
DELTA
0.5
XTI
3
VBI
0.715
EG
1.43
IS
3e-13
VTOTC
0
N
1.22
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
5e-12
CDS
0.13e-12
RDB
1000
CBS
1e-9
CGSO
0.3e-12
CGDO
0.02e-12
DELTA1
0.3
DELTA2
0.1
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
UNITS
Parameter
Units
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
VDS = 1 V to 3 V, ID = 5 mA to 30 mA
Date:
3/24/97
NE32584C
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 84C
1.78 ± 0.2
S
1.78 ± 0.2
D
D
S
G
0.5 ± 0.1
(ALL LEADS)
1.0 ±0.2 (ALL LEADS)
1.7 MAX
+0.07
0.1 -0.03
Part Number Designator (Letter).
When the letter is upright,
the gate lead is to the right.
ORDERING INFORMATION
PART
NUMBER
AVAILABILITY
LEAD
LENGTH
PACKAGE
OUTLINE
NE32584C-S
Bulk up to 1K
1.0 mm
84C
NE32584C-T1
1K/Reel
1.0 mm
84C
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -12/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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