ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. Noise Figure, NF (dB) 1.0 GA 0.8 18 0.6 15 12 0.4 NF 0.2 Associated Gain, GA (dB) • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz 9 6 0 2 6 4 8 10 20 30 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE32584C PACKAGE OUTLINE SYMBOLS 1 PARAMETERS AND CONDITIONS 84C UNITS NF Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB GA 1 Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB IDSS Saturated Drain Current, VDS = 2 V,VGS = 0 V MIN TYP MAX 0.45 0.55 11.0 12.5 mA 20 60 90 VP Pinch-off Voltage, VDS = 2 V, IDS = 100 µA V -2.0 -0.7 -0.2 gm Transconductance, VDS = 2 V, ID = 10 mA mS 45 60 µA 0.5 RTH (CH-A) Thermal Resistance (Channel to Ambient) °C/W 750 RTH (CH-C) Thermal Resistance (Channel to Case) °C/W IGSO Gate to Source Leakage Current, VGS = -3 V 10.0 350 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories NE32584C ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 IDS Drain Current mA IDSS IGRF Gate Current µA 100 TCH Channel Temperature °C TSTG Storage Temperature PT Total Power Dissipation VDS = 2 V, ID = 10 mA NFOPT GA (GHz) (dB) (dB) MAG ANG Rn/50 2 0.29 20.0 0.86 22 0.27 4 0.30 18.3 0.76 45 0.25 6 0.33 16.5 0.69 70 0.18 150 8 0.36 15.0 0.63 96 0.11 °C -65 to +150 10 0.40 13.6 0.59 122 0.08 mW 165 12 0.45 12.5 0.54 147 0.04 14 0.54 12.0 0.48 171 0.04 16 0.68 11.8 0.40 -165 0.05 18 0.85 11.5 0.31 -144 0.06 TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 ΓOPT FREQ. Note: 1. Operation in excess of any one of these parameters may result in permanent damage. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 80 150 Drain Current, ID (mA) Total Power Dissipation, PT (mW) TYPICAL NOISE PARAMETERS (TA = 25°C) 100 50 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 -0.6 V -0.8 V 100 50 200 150 0 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT 24 VDS = 2 V f = 12 GHz 16 1.0 12 0.5 8 14 GA 13 Noise Figure, NF (dB) 20 GA Associated Gain, GA (dB) VDS = 2 V ID = 10 mA Noise Figure, NF (dB) 3.0 1.5 12 2.0 11 1.5 10 1.0 0.5 NF NF 0 4 1 2 4 6 8 10 Frequency, f (GHz) 14 20 30 0 10 20 Drain Current, ID (mA) 30 Associated Gain, GA (dB) 0 NE32584C TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) j50 +120˚ j100 j25 +90˚ 5 +60˚ 4 +30˚ 3 +150˚ j10 10 0 2 S11 20 GHz S22 20 GHz 25 50 1 100 S22 .1 GHz S11 .1 GHz -j10 S12 .1 GHz S21 ±180˚ .1 GHz .1 .06 S21 20 GHz -150˚ 0˚ -30˚ S12 20 GHz -j25 -j100 Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA) -j50 -60˚ -120˚ -90˚ NE32584C VDS = 2 V, IDS = 10 mA FREQUENCY S11 S21 (GHz) MAG ANG 0.100 0.200 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.500 12.000 13.000 14.000 15.000 16.000 17.000 18.000 1.001 1.001 0.998 0.989 0.967 0.943 0.907 0.857 0.800 0.755 0.725 0.683 0.663 0.585 0.565 0.551 0.548 0.560 0.565 0.565 0.575 -1.75 -3.60 -8.95 -17.72 -34.63 -50.81 -66.71 -81.86 -96.39 -110.25 -124.55 -138.37 -154.60 178.24 168.24 148.32 129.66 112.17 94.50 76.97 60.33 MAG 5.202 5.189 5.178 5.128 5.013 4.865 4.703 4.493 4.297 4.143 4.068 3.994 4.017 3.849 3.790 3.720 3.669 3.652 3.557 3.448 3.357 S12 ANG 178.07 176.33 170.78 161.98 145.12 128.82 112.71 97.04 82.71 69.20 55.99 42.58 28.11 6.85 -0.46 -13.97 -28.93 -44.37 -60.11 -74.93 -89.44 MAG 0.001 0.003 0.008 0.015 0.030 0.043 0.054 0.062 0.069 0.075 0.081 0.084 0.089 0.091 0.090 0.090 0.089 0.087 0.085 0.084 0.082 S22 ANG MAG ANG 83.90 86.02 83.30 76.85 64.62 53.33 42.06 31.40 21.97 13.52 5.09 -3.80 -12.63 -26.79 -31.63 -41.14 -52.52 -64.18 -76.05 -89.05 -103.35 0.587 0.585 0.585 0.581 0.576 0.567 0.554 0.531 0.503 0.483 0.470 0.453 0.431 0.359 0.335 0.300 0.281 0.276 0.274 0.259 0.263 -1.59 -3.13 -7.50 -14.91 -28.90 -42.28 -55.03 -66.77 -77.55 -87.72 -97.81 -106.93 -116.85 -134.35 -140.87 -157.16 -173.11 171.08 154.07 135.78 116.62 K MAG -0.075 -0.025 0.047 0.118 0.188 0.235 0.312 0.426 0.541 0.618 0.646 0.724 0.734 0.900 0.960 1.000 1.029 1.025 1.052 1.101 1.120 37.162 32.380 28.111 25.339 22.230 20.536 19.400 18.601 17.943 17.423 17.009 16.771 16.545 16.263 16.244 16.163 15.113 15.253 14.824 14.196 14.012 (dB) Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE32584C TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) j50 +120˚ j100 j25 +90˚ 10 +60˚ 8 +30˚ 6 +150˚ j10 4 S11 20 GHz 10 0 25 50 2 100 S22 20 GHz S22 .1 GHz ±180˚ S11 .1 GHz .02 S21 .1 GHz .06 S21 20 GHz -j10 -30˚ -150˚ -j25 S12 20 GHz -j100 -120˚ Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 20 mA) -j50 .1 0˚ S12 .1 GHz -60˚ -90˚ NE32584C VDS = 2 V, IDS = 20 mA FREQUENCY S11 (GHz) 0.100 0.200 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 S21 MAG ANG 1.001 1.000 0.997 0.987 0.958 0.925 0.879 0.821 0.757 0.708 0.674 0.628 0.605 0.549 0.513 0.504 0.504 0.517 0.527 0.530 0.543 -1.81 -3.77 -9.43 -18.65 -36.35 -53.13 -69.42 -84.79 -99.35 -113.22 -127.54 -141.15 -157.21 -174.62 165.35 145.18 126.44 109.11 91.65 74.05 57.36 S12 MAG ANG 6.552 6.531 6.511 6.432 6.243 5.999 5.734 5.417 5.121 4.892 4.754 4.617 4.599 4.503 4.291 4.193 4.123 4.106 4.001 3.888 3.785 178.03 176.09 170.33 161.14 143.49 126.61 110.09 94.24 79.85 66.26 53.02 39.77 25.65 11.83 -2.24 -15.42 -29.96 -45.03 -60.55 -75.22 -89.66 S22 K MAG ANG MAG ANG 0.001 0.003 0.007 0.014 0.027 0.038 0.048 0.056 0.062 0.068 0.074 0.078 0.083 0.086 0.087 0.087 0.088 0.087 0.086 0.085 0.083 84.76 86.79 83.69 77.38 65.71 55.04 44.64 34.90 26.33 18.60 10.86 2.80 -5.30 -14.51 -23.36 -32.46 -43.35 -54.72 -66.36 -79.11 -93.10 0.509 0.507 0.506 0.502 0.496 0.487 0.474 0.454 0.430 0.413 0.401 0.389 0.370 0.330 0.283 0.248 0.229 0.225 0.224 0.208 0.212 -1.76 -3.19 -7.53 -14.91 -28.84 -41.96 -54.20 -65.25 -75.31 -84.85 -94.21 -102.27 -111.19 -121.08 -133.16 -149.27 -165.01 179.28 161.59 142.58 121.91 MAG (dB) -0.078 0.011 0.063 0.134 0.232 0.303 0.397 0.519 0.646 0.723 0.754 0.826 0.836 0.927 1.017 1.052 1.061 1.050 1.058 1.098 1.114 38.164 33.379 29.685 26.622 23.640 21.983 20.772 19.856 19.170 18.570 18.078 17.723 17.436 17.190 16.128 15.439 15.202 15.376 15.203 14.697 14.536 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE32584C NE32584C NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF LD LD_PKG RD_PKG 0.3nH 0.2 ohms DRAIN 0.4nH Q1 RG_PKG LG_PKG GATE 0.28nH 0.5 ohms LG 0.55nH CCD_PKG CCG_PKG 0.14pF 0.1pF LS_PKG 0.095nH RS_PKG 0.2 ohms CSG_PKG CSD_PKG 0.01pF 0.01pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -0.6723 RG 3 VTOSC 0 RD 2 ALPHA 4 RS 2 BETA 0.115 RGMET 0 GAMMA 0.08 KF 0 GAMMADC 0.07 AF 1 Q 2 TNOM 27 DELTA 0.5 XTI 3 VBI 0.715 EG 1.43 IS 3e-13 VTOTC 0 N 1.22 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 5e-12 CDS 0.13e-12 RDB 1000 CBS 1e-9 CGSO 0.3e-12 CGDO 0.02e-12 DELTA1 0.3 DELTA2 0.1 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA Date: 3/24/97 NE32584C OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84C 1.78 ± 0.2 S 1.78 ± 0.2 D D S G 0.5 ± 0.1 (ALL LEADS) 1.0 ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. ORDERING INFORMATION PART NUMBER AVAILABILITY LEAD LENGTH PACKAGE OUTLINE NE32584C-S Bulk up to 1K 1.0 mm 84C NE32584C-T1 1K/Reel 1.0 mm 84C EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE