IXYS IXDI602D2TR 2a peak source/sink drive current Datasheet

IXD_602
2-Ampere Dual Low-Side
Ultrafast MOSFET Drivers
INTEGRATED CIRCUITS DIVISION
Features
Description
• 2A Peak Source/Sink Drive Current
• Wide Operating Voltage Range: 4.5V to 35V
• -40°C to +125°C Extended Operating Temperature
Range
• Logic Input Withstands Negative Swing of up to 5V
• Outputs May be Connected in Parallel for Higher
Drive Current
• Matched Rise and Fall Times
• Low Propagation Delay Time
• Low 10A Supply Current
• Low Output Impedance
The IXDF602/IXDI602/IXDN602 dual high-speed gate
drivers are especially well suited for driving the latest
IXYS MOSFETs and IGBTs. Each of the two outputs
can source and sink 2A of peak current while
producing voltage rise and fall times of less than 10ns.
The input of each driver is CMOS compatible, and is
virtually immune to latch up. Proprietary circuitry
eliminates cross conduction and current
“shoot-through.” Low propagation delay and fast,
matched rise and fall times make the IXD_602 family
ideal for high-frequency and high-power applications.
Applications
•
•
•
•
•
•
Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transformer Driver
The IXDN602 is configured as a dual non-inverting
driver, the IXDI602 is configured as a dual inverting
driver, and the IXDF602 has one inverting and one
non-inverting driver.
The IXD_602 family is available in a standard 8-pin
DIP (PI), an 8-pin SOIC (SIA), an 8-pin Power SOIC
with an exposed metal back (SI), and an 8-pin DFN
(D2) package.
Ordering Information
Part Number
IXDF602D2TR
IXDF602PI
IXDF602SI
IXDF602SITR
IXDF602SIA
IXDF602SIATR
IXDI602D2TR
IXDI602PI
IXDI602SI
IXDI602SITR
IXDI602SIA
IXDI602SIATR
IXDN602D2TR
IXDN602PI
IXDN602SI
IXDN602SITR
IXDN602SIA
IXDN602SIATR
DS-IXD_602-R06
Logic
Configuration
INA
A
OUTA
INB
B
OUTB
INA
A
OUTA
INB
B
OUTB
INA
A
OUTA
INB
B
OUTB
Package Type
Packing
Method
Quantity
8-Pin DFN
8-Pin DIP
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DFN
8-Pin DIP
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DFN
8-Pin DIP
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
Tape & Reel
Tube
Tube
Tape & Reel
Tube
Tape & Reel
Tape & Reel
Tube
Tube
Tape & Reel
Tube
Tape & Reel
Tape & Reel
Tube
Tube
Tape & Reel
Tube
Tape & Reel
2000
50
100
2000
100
2000
2000
50
100
2000
100
2000
2000
50
100
2000
100
2000
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1
IXD_602
INTEGRATED CIRCUITS DIVISION
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.1 Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2 Pin Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 Electrical Characteristics: TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6 Electrical Characteristics: TA = - 40°C to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.7 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
3
3
3
3
4
4
5
2. IXD_602 Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Characteristics Test Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3. Block Diagrams & Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1 IXDI602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2 IXDF602. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3 IXDN602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6
6
6
4. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.3 Soldering Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.4 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
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10
10
10
10
11
R06
IXD_602
INTEGRATED CIRCUITS DIVISION
1 Specifications
1.1 Pin Configurations
1.2 Pin Definitions
IXDF602
NC
1
INA
2
GND
3
INB
4
A
B
Pin Name
NC
7
OUTA
INA
Channel A Logic Input
6
VCC
INB
Channel B Logic Input
5
OUTB
IXDI602
NC
1
INA
2
GND
3
INB
4
A
B
Description
8
8
NC
7
OUTA
6
VCC
5
OUTB
8
NC
7
OUTA
6
VCC
5
OUTB
OUTA
OUTA
Channel A Output - Sources or sinks current to
turn-on or turn-off a discrete MOSFET or IGBT
OUTB
OUTB
Channel B Output - Sources or sinks current to
turn on or turn off a discrete MOSFET or IGBT
VCC
Supply Voltage - Provides power to the device
GND
Ground - Common ground reference for the
device
IXDN602
NC
1
INA
2
GND
3
INB
4
A
B
1.3 Absolute Maximum Ratings
Parameter
Symbol
Minimum
Maximum
Units
Supply Voltage
VCC
-0.3
40
V
Input Voltage
VIN
-5.0
VCC+0.3
V
Output Current
IOUT
-
±2
A
Junction Temperature
TJ
-55
+150
°C
Storage Temperature
TSTG
-65
+150
°C
Unless otherwise specified, absolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device.
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not
implied.
1.4 Recommended Operating Conditions
Parameter
Symbol
Range
Units
VCC
4.5 to 35
V
Operating Temperature Range
TA
-40 to +125
°C
R06
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Supply Voltage
3
IXD_602
INTEGRATED CIRCUITS DIVISION
1.5 Electrical Characteristics: TA = 25°C
Test Conditions: 4.5V < VCC < 35V, one channel (unless otherwise noted).
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Input Voltage, High
4.5V < VCC < 18V
VIH
3.0
-
-
Input Voltage, Low
4.5V < VCC < 18V
VIL
-
-
0.8
0V < VIN < VCC
IIN
-
-
±10
Output Voltage, High
-
VOH
VCC-0.025
-
-
Output Voltage, Low
-
VOL
-
-
0.025
Output Resistance, High State
VCC=18V, IOUT=-10mA
ROH
-
2.5
4
Output Resistance, Low State
VCC=18V, IOUT=10mA
ROL
-
1.5
3
IDC
-
-
±1
tr
Input Current
Units
V
A
V

Rise Time
Limited by package power
dissipation
VCC=18V, CLOAD=1000pF
-
7.5
15
Fall Time
VCC=18V, CLOAD=1000pF
tf
-
6.5
15
On-Time Propagation Delay
VCC=18V, CLOAD=1000pF
tondly
-
35
60
Off-Time Propagation Delay
VCC=18V, CLOAD=1000pF
toffdly
-
38
60
-
1
3
mA
-
<1
10
-
<1
10
A
Output Current, Continuous
Power Supply Current
VCC=18V, VIN=3.5V
VCC=18V, VIN=0V
VCC=18V, VIN=VCC
ICC
A
ns
1.6 Electrical Characteristics: TA = - 40°C to +125°C
Test Conditions: 4.5V < VCC < 35V, one channel (unless otherwise noted).
Parameter
Conditions
Symbol
Minimum
Maximum
Input Voltage, High
4.5V < VCC < 18V
VIH
3.3
-
Input Voltage, Low
4.5V < VCC < 18V
VIL
-
0.65
0V < VIN < VCC
IIN
-10
10
Output Voltage, High
-
VOH
VCC-0.025
-
Output Voltage, Low
-
VOL
-
0.025
Output Resistance, High State
VCC=18V, IOUT=-10mA
ROH
-
6
Output Resistance, Low State
VCC=18V, IOUT=10mA
ROL
-
5
IDC
-
±1
tr
Input Current
Units
V
A
V

Rise Time
Limited by package power
dissipation
VCC=18V, CLOAD=1000pF
-
18
Fall Time
VCC=18V, CLOAD=1000pF
tf
-
18
On-Time Propagation Delay
VCC=18V, CLOAD=1000pF
tondly
-
75
Off-Time Propagation Delay
VCC=18V, CLOAD=1000pF
toffdly
-
75
-
3.5
mA
-
150
-
150
A
Output Current, Continuous
Power Supply Current
4
VCC=18V, VIN=3.5V
VCC=18V, VIN=0V
VCC=18V, VIN=VCC
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ICC
A
ns
R06
IXD_602
INTEGRATED CIRCUITS DIVISION
1.7 Thermal Characteristics
Package
Parameter
Symbol
Rating
IXDD602D2 (8-Pin DFN)
Units
35
IXD_602PI (8-Pin DIP)
IXD_602SI (8-Pin Power SOIC)
125
JA
Thermal Resistance, Junction-to-Ambient
°C/W
85
IXD_602SIA (8-Pin SOIC)
120
IXD_602SI (8-Pin Power SOIC)
JC
Thermal Resistance, Junction-to-Case
10
°C/W
2 IXD_602 Performance
2.1 Timing Diagrams
VIH
INx
VIH
INx
VIL
tondly
VIL
toffdly
toffdly
tondly
90%
OUTx
OUTx
10%
90%
10%
tf
tr
tr
tf
Non-Inverting Driver Waveforms
Inverting Driver Waveforms
2.2 Characteristics Test Diagram
VCC
+
0.1μF
10μF
VCC
-
INA
OUTA
INB
OUTB
CLOAD
GND
Tektronix
Current Probe
6302
VIN
CLOAD
R06
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Tektronix
Current Probe
6302
5
IXD_602
INTEGRATED CIRCUITS DIVISION
3 Block Diagrams & Truth Tables
3.1 IXDI602
3.3 IXDN602
VCC
VCC
OUTA
INA
OUTA
INA
GND
GND
VCC
VCC
OUTB
INB
OUTB
INB
INX
OUTX
INX
OUTX
0
1
0
0
1
0
1
1
3.2 IXDF602
VCC
OUTA
INA
GND
VCC
OUTB
INB
6
INA
OUTA
0
1
1
0
INB
OUTB
0
0
1
1
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R06
IXD_602
INTEGRATED CIRCUITS DIVISION
4 Typical Performance Characteristics
Rise Time vs. Supply Voltage
(VIN=0-5V, f=10kHz, TA=25ºC)
120
Fall Time vs. Supply Voltage
(VIN=0-5V, f=10kHz, TA=25ºC)
120
12
Rise & Fall Time vs. Temperature
(VIN=0-5V, VCC=18V, CL=1nF)
11
100
Fall Time (ns)
80
CL=4.7nF
CL=1nF
CL=470pF
60
40
40
20
0
0
5
10
15
20
25
30
Supply Voltage (V)
35
CL=4.7nF
CL=1nF
CL=470pF
60
20
0
10
80
40
5
10
15
20
25
30
Supply Voltage (V)
Fall Time (ns)
Rise Time (ns)
VCC=4.5V
VCC=8V
100
VCC=12V
80 VCC=18V
VCC=25V
60 VCC=30V
VCC=35V
40
0
1000
2000
3000
4000
0
1000
2000
3000
4000
Load Capacitance (pF)
tondly
0
60
50
toffdly
40
30
tondly
35
40
0
5
10
15
Input Voltage (V)
Input Threshold vs. Temperature
(VCC=18V, CL=1nF)
5000
Propagation Delay vs. Temperature
(VCC=18V, CL=1nF)
toffdly
50
45
tondly
40
35
30
25
2.6
Min VIH
2.4
2.2
Max VIL
2.0
20
-40 -20
0
20 40 60 80
Temperature (ºC)
100 120 140
Input Threshold vs. Supply Voltage
3.5
Input Threshold (V)
Input Threshold (V)
100 120 140
20
20
15
20
25
30
Supply Voltage (V)
55
Propagation Delay (ns)
toffdly
2.8
20 40 60 80
Temperature (ºC)
0
5000
Propagation Delay vs. Input Voltage
(VCC=18V, CL=1nF)
70
Propagation Delay (ns)
Propagation Delay (ns)
100
10
0
20
Propagation Delay vs. Supply Voltage
(VIN=0-5V, CL=1nF, f=1kHz)
5
-40 -20
40
Fall Time vs. Load Capacitance
120
150
3.0
2.5
Min VIH
2.0
Max VIL
1.5
1.0
1.8
-40 -20
R06
35
VCC=4.5V
100 VCC=8V
VCC=12V
80 VCC=18V
VCC=25V
60 VCC=30V
VCC=35V
40
Load Capacitance (pF)
0
tf
7
4
0
20
50
8
5
Rise Time vs. Load Capacitance
200
tr
9
6
120
0
Time (ns)
Rise Time (ns)
100
0
20 40 60 80
Temperature (ºC)
100 120 140
0
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5
10
15
20
25
30
Supply Voltage (V)
35
40
7
IXD_602
INTEGRATED CIRCUITS DIVISION
50
0
100
Supply Current (mA)
350
300
250
200
150
250
200
150
100
50
0
100
10000
Supply Current vs. Load Capacitance
Both Outputs Active
(VCC=35V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
100
1000
Load Capacitance (pF)
200
Supply Current vs. Load Capacitance
Both Outputs Active
(VCC=18V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
150
100
50
0
100
10000
Supply Current vs. Frequency
Both Outputs Active
(VCC=8V)
1000
10
1
0.1
100
1000
Load Capacitance (pF)
10000
Supply Current vs. Frequency
Both Outputs Active
(VCC=12V)
1000
CL=4.7nF
CL=1nF
100
CL=470pF
Supply Current (mA)
400
1000
Load Capacitance (pF)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
Supply Current (mA)
100
300
Supply Current vs. Load Capacitance
Both Outputs Active
(VCC=12V)
Supply Current (mA)
150
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
Supply Current (mA)
Supply Current (mA)
200
Supply Current vs. Load Capacitance
Both Outputs Active
(VCC=8V)
CL=4.7nF
CL=1nF
CL=470pF
10
1
0.1
50
1
0.1
1000
0.1
10000
1
10
1
0.1
10
100
Frequency (kHz)
1000
10000
Quiescent Supply Current
vs. Temperature
(VCC=18V)
3.0
CL=4.7nF
CL=1nF
100
CL=470pF
VIN=3.5V
2.5
2.0
VIN=5V
1.5
VIN=10V
1.0
0.5
VIN=0V & 18V
0.0
0.01
1
10
100
Frequency (kHz)
1000
10000
0.1
Dynamic Supply Current
vs. Temperature
(VIN=0-5V, VCC=18V, CL=1nF, f=1kHz)
1.0
0.9
0.8
0.7
10
100
Frequency (kHz)
1000
7
-6
6
-5
-4
-3
-2
0
20 40 60 80
Temperature (ºC)
100 120 140
20 40 60 80
Temperature (ºC)
100 120 140
5
4
3
2
1
0
-40 -20
0
Output Sink Current
vs. Supply Voltage
(CL=27nF)
8
-7
-1
0.6
-40 -20
10000
Output Source Current
vs. Supply Voltage
(CL=27nF)
-8
Source Current (A)
1.1
1
Sink Current (A)
0.1
Supply Current (mA)
10
100
Frequency (kHz)
Supply Current (mA)
10
1
Supply Current vs. Frequency
Both Outputs Active
(VCC=35V)
1000
CL=4.7nF
CL=1nF
100
CL=470pF
0.01
8
0.1
10000
Supply Current (mA)
Supply Current (mA)
1000
Load Capacitance (pF)
Supply Current vs. Frequency
Both Outputs Active
(VCC=18V)
1000
1.2
0.01
0.01
0
100
0
0
5
10
15
20
25
30
Supply Voltage (V)
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35
40
0
5
10
15
20
25
30
Supply Voltage (V)
35
40
R06
IXD_602
INTEGRATED CIRCUITS DIVISION
Output Source Current
vs. Temperature
(VCC=18V, CL=27nF)
5.0
-4.5
4.5
-4.0
4.0
Sink Current (A)
Source Current (A)
-5.0
-3.5
-3.0
-2.5
-2.0
3.0
2.5
2.0
1.0
-1.0
-40 -20
0
20 40 60 80
Temperature (ºC)
-40 -20
100 120 140
High-State Output Resistance
vs. Supply Voltage
(IOUT= -10mA)
8
6
4
2
0
20 40 60 80
Temperature (ºC)
100 120 140
Low State Output Resistance
vs. Supply Voltage
(IOUT= +10mA)
10
Output Resistance (Ω)
10
Output Resistance (Ω)
3.5
1.5
-1.5
8
6
4
2
0
0
0
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Output Sink Current vs. Temperature
(VCC=18V, CL=27nF)
5
10
15
20
25
30
Supply Voltage (V)
35
40
0
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5
10
15
20
25
30
Supply Voltage (V)
35
40
9
IXD_602
INTEGRATED CIRCUITS DIVISION
5 Manufacturing Information
5.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee
proper operation of our devices when handled according to the limitations and information in that standard as well as
to any limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to
the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device
Moisture Sensitivity Level (MSL) Rating
IXD_602 All Versions
MSL 1
5.2 ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard
JESD-625.
5.3 Soldering Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
10
Device
Maximum Temperature x Time
Maximum Reflow Cycles
IXD_602SI / IXD_602SIA / IXD_602D2
IXD_602PI
260°C for 30 seconds
250°C for 30 seconds
3
-
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R06
IXD_602
INTEGRATED CIRCUITS DIVISION
5.4 Mechanical Dimensions
5.4.1 SIA (8-Pin SOIC)
1.270 REF
(0.050)
Pin 8
PCB Land Pattern
0.60
(0.024)
3.937 ± 0.254
(0.155 ± 0.010)
5.994 ± 0.254
(0.236 ± 0.010)
0.762 ± 0.254
(0.030 ± 0.010)
1.55
(0.061)
5.40
(0.213)
Pin 1
0.406 ± 0.076
(0.016 ± 0.003)
1.346 ± 0.076
(0.053 ± 0.003)
4.928 ± 0.254
(0.194 ± 0.010)
1.27
(0.050)
0.559 ± 0.254
(0.022 ± 0.010)
Dimensions
mm
(inches)
0.051 MIN - 0.254 MAX
(0.002 MIN - 0.010 MAX)
5.4.2 SI (8-Pin Power SOIC with Exposed Metal Back)
3.80
(0.150)
0.762 ± 0.254
(0.030 ± 0.010)
3.937 ± 0.254
(0.155 ± 0.010)
5.994 ± 0.254
(0.236 ± 0.010)
5.40
2.75
(0.209) (0.108)
1.55
(0.061)
Pin 1
0.406 ± 0.076
(0.016 ± 0.003)
4.928 ± 0.254
(0.194 ± 0.010)
0.60
(0.024)
1.27
(0.050)
1.270 REF
(0.050)
1.346 ± 0.076
(0.053 ± 0.003)
Recommended PCB Land Pattern
2.540 ± 0.254
(0.100 ± 0.010)
7º
0.051 MIN - 0.254 MAX
(0.002 MIN - 0.010 MAX)
3.556 ± 0.254
(0.140 ±0.010)
Dimensions
mm
(inches)
Note: The exposed metal pad on the back of the SI package should be connected to GND. It is not suitable for
carrying current.
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11
IXD_602
INTEGRATED CIRCUITS DIVISION
5.4.3 Tape & Reel Information for SI and SIA Packages
330.2 DIA.
(13.00 DIA.)
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
W=12.00
(0.472)
B0=5.30
(0.209)
A0=6.50
(0.256)
K0= 2.10
(0.083)
P=8.00
(0.315)
Dimensions
mm
(inches)
User Direction of Feed
Embossed Carrier
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
Embossment
5.4.4 PI (8-Pin DIP)
2.540 ± 0.127
(0.100 ± 0.005)
9.652 ± 0.381
(0.380 ± 0.015)
8-0.800 DIA.
(8-0.031 DIA.)
6.350 ± 0.127
(0.250 ± 0.005)
0.457 ± 0.076
(0.018 ± 0.003)
4.064 TYP
(0.160)
3.302 ± 0.051
(0.130 ± 0.002)
7.239 TYP.
(0.285)
0.254 ± 0.0127
(0.010 ± 0.0005)
7.620 ± 0.127
(0.300 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
Dimensions
mm
(inches)
0.813 ± 0.102
(0.032 ± 0.004)
12
2.540 ± 0.127
(0.100 ± 0.005)
9.144 ± 0.508
(0.360 ± 0.020)
6.350 ± 0.127
(0.250 ± 0.005)
Pin 1
PCB Hole Pattern
7.620 ± 0.254
(0.300 ± 0.010)
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R06
IXD_602
INTEGRATED CIRCUITS DIVISION
5.4.5 D2 (8-Pin DFN)
5.00 BSC
(0.197 BSC)
0.80 / 1.00
(0.031 / 0.039)
0.35 x 45º
(0.014 x 45º)
0.20 REF
(0.008 REF)
0.95
(0.037)
Pin 1
4.00 BSC
(0.157 BSC)
4.50
(0.177)
3.10
(0.122)
0.45
(0.018)
0.10
(0.004)
2.60
(0.102)
1.20
(0.047)
0.74 / 0.83
(0.029 / 0.033)
Recommended PCB Land Pattern
3.03 / 3.10
(0.119 / 0.122)
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
0.30 / 0.45
(0.012 / 0.018)
0.95 BSC
(0.037 BSC)
Pin 1
Pin 8
2.53 / 2.60
(0.100 / 0.102)
0.35 / 0.45 x 45º
(0.014 / 0.018 x 45º)
NOTE:
The exposed metal pad on the back of the D2 package should
be connected to GND. Pad is not suitable for carrying current.
5.4.6 Tape & Reel Information for D2 Package
330.2 DIA.
(13.00 DIA.)
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
∅1.55 ± 0.05
4.00 ± 0.10 See Note #2
2.00 ± 0.05
R0.75 TYP
1.75 ± 0.10
(0.05)
5º MAX
5.50 ± 0.05
(0.05)
B0=5.40 ± 0.10
12.00 ± 0.30
Embossed Carrier
K0=1.90 ± 0.10
8.00 ± 0.10
5º MAX
A0=4.25 ± 0.10
Embossment
0.30 ± 0.05
∅1.50 (MIN)
NOTES:
1. A0 & B0 measured at 0.3mm above base of pocket.
2. 10 pitches cumulative tol. ± 0.2mm
3. ( ) Reference dimensions only.
4. Unless otherwise specified, all dimensions in millimeters.
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-IXD_602-R06
©Copyright 2014, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
9/25/2014
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