Single N-channel MOSFET ELM34414AA-N ■General description ■Features ELM34414AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=15A Rds(on) < 8mΩ (Vgs=10V) Rds(on) < 12mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=90°C Continuous drain current Pulsed drain current 15 12 50 Id Idm Tc=25°C Power dissipation Tc=90°C Junction and storage temperature range Pd Tj, Tstg A A 2.5 3 W 2.0 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Max. Unit 50 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 Typ. 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 SOURCE GATE 5 6 DRAIN DRAIN 7 8 DRAIN DRAIN 5-1 D G S Single N-channel MOSFET ELM34414AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 30 V Vds=24V, Vgs=0V 1 Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Vgs=10V, Id=15A Rds(on) Vgs=4.5V, Id=12A 1.0 μA ±100 nA 1.5 6.8 3.0 8.0 V mΩ 8.8 12.0 mΩ Forward transconductance Gfs Vds=15V, Id=15A Diode forward voltage Max. body-diode continuous current Vsd Is If=3A, Vgs=0V Pulsed body-diode current DYNAMIC PARAMETERS Ism Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=15V, f=1MHz 1900 530 pF pF Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss 120 pF Qg Qgs Qgd 18.0 4.2 5.4 Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Vgs=10V, Vds=15V, Id=15A 60 1 S 1 1.1 3 V A 1 6 A 3 28.0 nC nC nC 2 2 2 td(on) tr Vgs=10V, Vds=15V, Id=1A 10 24 ns ns 2 2 td(off) RL=15Ω, Rgen=6Ω 48 ns 2 12 ns 2 tf trr If=3A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 5-2 50 80 ns ������ ������������ Single N-channel MOSFET ELM34414AA-N ������������ ■Typical electrical and thermal characteristics ������� Output Characteristics Transfer Characteristics 50 40 45 35 ID - Drain Current(A) ID - Drain Current(A) 35 VGS=10thru 4V 40 30 25 20 15 10 3V 5 0 0 1 2 3 4 30 25 20 15 TC=125° C 10 25° C 5 0 0.0 5 VDS- Drain-to-Source Voltage(V) 0.5 1.0 2.0 2.5 3.0 3.5 4.0 VGS- Gate-to-Source Voltage(V) On-Resistance vs. Drain Current 0.015 2500 0.012 2000 C- Capacitance(pF) rDS(on) - On-Resistance(�) 1.5 -55° C VGS=4.5V 0.009 VGS=10V 0.006 0.003 Capacitance f = 1 MHz VGS=0V Ciss 1500 1000 Coss 500 Crss 0.000 0 10 20 30 ID - Drain Current(A) 40 0 50 rDS(on) - On-Resistance(�) (Normalized) VGS- Gate-to-Source Voltage(V) 2.00 VDS=10V ID=15A 6 4 2 0 4 8 12 12 18 24 30 On-Resistance vs. Junction Temperature 10 0 6 VDS- Drain-to-Source Voltage(V) Gate Charge 8 0 16 20 1.75 1.50 1.25 1.00 0.75 0.50 -50 24 Qg - Total Gate Charge(nC) VGS=10V ID=15A -25 0 25 50 75 100 TJ- Junction Temperature(° C) � � 5-3 125 150 ������ ������������ Single N-channel MOSFET ������������ ELM34414AA-N On-Resistance vs.Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.040 rDS(ON) - On-Resistance(�) IS - Source Current(A) 60 TJ=150° C 10 TJ=25° C 0.032 0.024 0.016 0.000 1 0.00 0.2 0.4 0.6 0.8 1.0 VSD- Source-to-Drain Voltage(V) ID=15A 0.008 1.2 0 Threshold Voltage 6 8 10 50 ID = 250�A 0.2 40 0.0 Power(W) VGS(th) Variance(V) 4 Single Pulse Power 0.4 -0.2 -0.4 30 TA=25° C 20 10 -0.6 -0.8 -50 -25 0 25 50 75 100 TJ- Temperature(° C) 0 10-2 125 150 Safe Operating Area, Junction-to Ambient 100�s,10�s Limited by rDS(on) 10 1ms 1 10ms 100ms 0.1 1s TA=25°C Single Pulse 10s dc,100s 0.01 0.1 1 10-1 1 Time(sec) 100 ID - Drain Current(A) 2 VGS - Gate-to-Source Voltage(V) 10 100 VDS- Drain-to-Source Voltage(V) � 5-4 10 ������ ������������ Single N-channel MOSFET ������������ ELM34414AA-N Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 Single Pulse 0.01 10 -4 10 t2 t1 1. Duty Cycle, D�= t2 2. R� J�A(t) = 50�° CW 3. TJM - TA =�PDM�*�R� �JA(t) 4. Surface Mounted -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 5-5 � � 10 100 600