Central CP794R Small signal mosfet transistor p - channel enhancement-mode transistor chip Datasheet

PROCESS
CP794R
Small Signal MOSFET Transistor
P - Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Die Size
15.7 x 15.7 MILS
Die Thickness
3.9 MILS
Gate Bonding Pad Area
3.9 x 3.9 MILS
Source Bonding Pad Area
9.1 x 8.1 MILS
Top Side Metalization
Al-Si - 35,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 6 INCH WAFER
95,400
PRINCIPAL DEVICE TYPES
CEDM8004
CMLM0584
CMLDM7484
R0 (29-July 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CP794R
Typical Electrical Characteristics
R0 (29-July 2010)
w w w. c e n t r a l s e m i . c o m
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