ETC HAL501A Hall effect sensor family Datasheet

MICRONAS
Edition Feb. 14, 2001
6251-109-4E
6251-485-2DS
HAL501...506, 508, 509,
HAL516...519, 523
Hall Effect Sensor Family
MICRONAS
HAL5xx
Contents
Page
Section
Title
3
3
3
4
4
4
4
4
1.
1.1.
1.2.
1.3.
1.3.1.
1.4.
1.5.
1.6.
Introduction
Features
Family Overview
Marking Code
Special Marking of Prototype Parts
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability
5
2.
Functional Description
6
6
6
6
7
7
8
9
3.
3.1.
3.2.
3.3.
3.4.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Recommended Operating Conditions
Electrical Characteristics
Magnetic Characteristics Overview
14
14
16
18
20
22
24
26
28
30
32
34
36
38
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
4.7.
4.8.
4.9.
4.10.
4.11.
4.12.
4.13.
Type Descriptions
HAL501
HAL502
HAL503
HAL504
HAL505
HAL506
HAL508
HAL509
HAL516
HAL517
HAL518
HAL519
HAL523
40
40
40
40
40
5.
5.1.
5.2.
5.3.
5.4.
Application Notes
Ambient Temperature
Extended Operating Conditions
Start-up Behavior
EMC
44
6.
Data Sheet History
2
Micronas
HAL5xx
Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1.2. Family Overview
The types differ according to the magnetic flux density
values for the magnetic switching points, the temperature behavior of the magnetic switching points, and the
mode of switching.
1. Introduction
Type
Switching
Behavior
Sensitivity
see
Page
501
bipolar
very high
14
502
latching
high
16
503
latching
medium
18
504
unipolar
medium
20
505
latching
low
22
The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects.
506
unipolar
high
24
508
unipolar
medium
26
509
unipolar
low
28
The sensors are designed for industrial and automotive
applications and operate with supply voltages from
3.8 V to 24 V in the ambient temperature range from
–40 °C up to 150 °C.
516
unipolar with
inverted output
high
30
517
unipolar with
inverted output
medium
32
All sensors are available in a SMD-package (SOT-89B)
and in a leaded version (TO-92UA).
518
unipolar with
inverted output
medium
34
1.1. Features:
519
unipolar with
inverted output
(north polarity)
high
36
523
unipolar
low
38
The HAL5xx family consists of different Hall switches
produced in CMOS technology. All sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain output
transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the
fixed reference values (switching points). Accordingly,
the output transistor is switched on or off.
The sensors of this family differ in the switching behavior
and the switching points.
– switching offset compensation at typically 62 kHz
– operates from 3.8 V to 24 V supply voltage
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against mechanical stress effects
Latching Sensors:
– short-circuit protected open-drain output by thermal
shut down
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
– constant switching points over a wide supply voltage
range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the magnetic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to DIN 40839
Micronas
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
3
HAL5xx
Unipolar Switching Sensors:
for lab experiments and design-ins but are not intended to
be used for qualification tests or as production parts.
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
Unipolar Switching Sensors with Inverted Output:
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
Unipolar Switching Sensors with Inverted Output
Sensitive to North Pole:
The output turns high with the magnetic north pole on the
branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the
magnetic south pole on the branded side.
1.4. Operating Junction Temperature Range
A: TJ = –40 °C to +170 °C
K: TJ = –40 °C to +140 °C
E: TJ = –40 °C to +100 °C
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature TJ).
The relationship between ambient temperature (TA) and
junction temperature is explained in section 5.1. on page
40.
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A, K, or E
Package: SF for SOT-89B
UA for TO-92UA
Type: 5xx
1.3. Marking Code
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
Temperature Range
Example: HAL505UA-E
→ Type: 505
→ Package: TO-92UA
→ Temperature Range: TJ = –40 °C to +100 °C
A
K
E
HAL501
501A
501K
501E
HAL502
502A
502K
502E
HAL503
503A
503K
503E
HAL504
504A
504K
504E
1.6. Solderability
HAL505
505A
505K
505E
all packages: according to IEC68-2-58
HAL506
506A
506K
506E
HAL508
508A
508K
508E
HAL509
509A
509K
509E
HAL516
516A
516K
516E
HAL517
517A
517K
517E
HAL518
518A
518K
518E
HAL519
519A
519K
519E
HAL523
523A
523K
523E
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
During soldering reflow processing and manual reworking, a component body temperature of 260 °C should
not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40 °C and 90% relative humidity.
VDD
1
3
OUT
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath the
temperature range letter on each IC. They may be used
4
2
GND
Fig. 1–1: Pin configuration
Micronas
HAL5xx
HAL5xx
HAL5xx
2. Functional Description
The HAL 5xx sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at
the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic
switching level to switching of output can vary between
zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-Pin and VDD-Pin together with external series
resistors. Reverse current is limited at the VDD-Pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the VDD-Pin for reverse
voltages ranging from 0 V to –15 V.
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Short Circuit &
Overvoltage
Protection
Hysteresis
Control
Comparator
Switch
OUT
Output
3
Clock
GND
2
Fig. 2–1: HAL5xx block diagram
fosc
t
B
BON
t
VOUT
VOH
VOL
t
IDD
1/fosc = 16 µs
tf
t
Fig. 2–2: Timing diagram
Micronas
5
HAL5xx
3. Specifications
3.1. Outline Dimensions
sensitive area
4.55
0.15
∅ 0.2
1.7
0.3
sensitive area
4.06 ±0.1
1.5
∅ 0.4
0.3
y
y
2
3.05 ±0.1
4 ±0.2
0.48
top view
1
2
3
0.55
0.4
1
2
3
0.4
0.75 ±0.2
1.15
3.1 ±0.2
2.55
min.
0.25
0.36
0.4
1.5
14.0
min.
0.42
3.0
1.27 1.27
branded side
2.54
0.06 ±0.04
branded side
SPGS0022-5-A3/2E
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
3.2. Dimensions of Sensitive Area
0.25 mm x 0.12 mm
3.3. Positions of Sensitive Areas
6
SOT-89B
TO-92UA
x
center of
the package
center of
the package
y
0.95 mm nominal
1.0 mm nominal
45°
0.8
SPGS7002-9-A/2E
Fig. 3–2:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
Note: For all package diagrams, a mechanical tolerance
of ±0.05 mm applies to all dimensions where no tolerance
is explicitly given.
An improvement of the TO-92UA package with reduced
tolerances will be introduced end of 2001.
Micronas
HAL5xx
3.4. Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
–15
281)
V
–VP
Test Voltage for Supply
1
–242)
–
V
–IDD
Reverse Supply Current
1
–
501)
mA
IDDZ
Supply Current through
Protection Device
1
–2003)
2003)
mA
VO
Output Voltage
3
–0.3
281)
V
IO
Continuous Output On Current
3
–
501)
mA
IOmax
Peak Output On Current
3
–
2503)
mA
IOZ
Output Current through
Protection Device
3
–2003)
2003)
mA
TS
Storage Temperature Range5)
–65
150
°C
TJ
Junction Temperature Range
–40
–40
150
1704)
°C
1)
2)
3)
4)
5)
as long as TJmax is not exceeded
with a 220 Ω series resistance at pin 1 corresponding to the test circuit on page 40
t < 2 ms
t < 1000h
Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity.
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
3.8
24
V
IO
Continuous Output On Current
3
0
20
mA
VO
Output Voltage
(output switched off)
3
0
24
V
Micronas
7
HAL5xx
3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
2.3
3
4.2
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
VDDZ
Overvoltage Protection
at Supply
1
–
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
–
28
32
V
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage
3
–
130
280
mV
IOL = 20 mA, TJ = 25 °C
VOL
Output Voltage over
Temperature Range
3
–
130
400
mV
IOL = 20 mA
IOH
Output Leakage Current
3
–
0.06
0.1
µA
Output switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
IOH
Output Leakage Current over
Temperature Range
3
–
–
10
µA
Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24 V
fosc
Internal Oscillator
Chopper Frequency
–
49
62
–
kHz
TJ = 25 °C,
VDD = 4.5 V to 24 V
fosc
Internal Oscillator Chopper Frequency over Temperature Range
–
38
62
–
kHz
ten(O)
Enable Time of Output after
Setting of VDD
1
–
30
70
µs
VDD = 12 V 1)
tr
Output Rise Time
3
–
75
400
ns
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
tf
Output Fall Time
3
–
50
400
ns
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
RthJSB
case
SOT-89B
Thermal Resistance Junction
to Substrate Backside
–
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
RthJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point
–
–
150
200
K/W
1)
B > BON + 2 mT or B < BOFF – 2 mT for HAL 50x,
B > BOFF + 2 mT or B < BON – 2 mT for HAL 51x
5.0
2.0
2.0
1.0
Fig. 3–3: Recommended pad size SOT-89B
Dimensions in mm
8
Micronas
HAL5xx
3.7. Magnetic Characteristics Overview at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Parameter
Switching type
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
–40 °C
–0.8
0.6
2.5
–2.5
–0.8
0.8
0.5
1.4
2
mT
25 °C
–0.5
0.5
2.3
–2.3
–0.7
0.5
0.5
1.2
1.9
mT
170 °C
–1.5
0.7
3
–2.5
–0.2
2
0.4
0.9
1.8
mT
HAL 502
–40 °C
1
2.8
5
–5
–2.8
–1
4.5
5.6
7.2
mT
latching
25 °C
1
2.6
4.5
–4.5
–2.6
–1
4.5
5.2
7
mT
170 °C
0.9
2.3
4.3
–4.3
–2.3
–0.9
3.5
4.6
6.8
mT
HAL 503
–40 °C
6.4
8.6
10.8
–10.8
–8.6
–6.4
14.6
17.2
20.6
mT
latching
25 °C
6
8
10
–10
–8
–6
13.6
16
18
mT
170 °C
4
6.4
8.9
–8.9
–6
–4
11
12.4
16
mT
HAL 504
–40 °C
10.3
13
15.7
5.3
7.5
9.6
4.4
5.5
6.5
mT
unipolar
25 °C
9.5
12
14.5
5
7
9
4
5
6.5
mT
170 °C
8.5
10.2
13.7
4.2
5.9
8.5
3.2
4.3
6.4
mT
HAL 505
–40 °C
11.8
15
18.3
–18.3
–15
–11.8
26
30
34
mT
latching
25 °C
11
13.5
17
–17
–13.5
–11
24
27
32
mT
170 °C
9.4
11.7
16.1
–16.1
–11.7
–9.4
20
23.4
31.3
mT
HAL 506
–40 °C
4.3
5.9
7.7
2.1
3.8
5.4
1.6
2.1
2.8
mT
unipolar
25 °C
3.8
5.5
7.2
2
3.5
5
1.5
2
2.7
mT
170 °C
3.2
4.6
6.8
1.7
3
5.2
0.9
1.6
2.6
mT
HAL 508
–40 °C
15.5
19
21.9
14
16.7
20
1.6
2.3
2.8
mT
unipolar
25 °C
15
18
20.7
13.5
16
19
1.5
2
2.7
mT
170 °C
12.7
15.3
20
11.4
13.6
18.3
1
1.7
2.6
mT
HAL 509
–40 °C
23.1
27.4
31.1
19.9
23.8
27.2
2.9
3.6
3.9
mT
unipolar
25 °C
23.1
26.8
30.4
19.9
23.2
26.6
2.8
3.5
3.9
mT
170 °C
21.3
25.4
28.9
18.3
22.1
25.3
2.5
3.3
3.8
mT
HAL 516
–40 °C
2.1
3.8
5.4
4.3
5.9
7.7
1.6
2.1
2.8
mT
unipolar
25 °C
2
3.5
5
3.8
5.5
7.2
1.5
2
2.7
mT
inverted
170 °C
1.7
3
5.2
3.2
4.6
6.8
0.9
1.6
2.6
mT
HAL 517
–40 °C
14
17.1
21.5
15.5
19.6
22.5
1.6
2.5
3
mT
unipolar
25 °C
13.5
16.2
19
15
18.3
20.7
1.5
2.1
2.7
mT
inverted
170 °C
9
12.3
18
10.5
13.7
20
0.8
1.4
2.4
mT
HAL 518
–40 °C
14
16.7
20
15.5
19
22
1.5
2.3
3
mT
unipolar
25 °C
13.5
16
19
15
18
20.7
1.4
2
2.8
mT
inverted
170 °C
11
13.6
18.3
12.2
15.3
20
0.8
1.7
2.6
mT
HAL 501
bipolar
Note: For detailed descriptions of the individual types, see pages 14 and following.
Micronas
9
HAL5xx
Magnetic Characteristics Overview, continued
Sensor
Parameter
Switching type
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
–5.4
–3.8
–2.1
–7.7
–5.9
–4.3
1.6
2.1
2.8
mT
–5
–3.6
–2
–7.2
–5.5
–3.8
1.5
1.9
2.7
mT
HAL 519
–40 °C
unipolar
25 °C
inverted
170 °C
–5.2
–3.0
–1.5
–6.8
–4.6
–2.8
0.9
1.6
2.6
mT
HAL 523
–40 °C
28
34.5
42
18
24
30
7
10.5
14
mT
unipolar
25 °C
28
34.5
42
18
24
30
7
10.5
14
mT
170 °C
28
34.5
42
18
24
30
7
10.5
14
mT
Note: For detailed descriptions of the individual types, see pages 14 and following.
mA
25
HAL 5xx
15
10
HAL 5xx
4.5
20
IDD
mA
5.0
TA = –40 °C
TA = 25 °C
TA=170 °C
IDD 4.0
TA = –40 °C
3.5
TA = 25 °C
3.0
5
TA = 100 °C
2.5
TA = 170 °C
2.0
0
1.5
–5
1.0
–10
–15
–15–10 –5 0
0.5
5 10 15 20 25 30 35 V
VDD
Fig. 3–4: Typical supply current
versus supply voltage
10
0
1
2
3
4
5
6
7
8 V
VDD
Fig. 3–5: Typical supply current
versus supply voltage
Micronas
HAL5xx
mA
5
kHz
100
HAL 5xx
HAL 5xx
90
IDD
fosc 80
4
70
VDD = 24 V
VDD = 12 V
3
TA = 25 °C
60
TA = –40 °C
50
2
TA = 170 °C
40
VDD = 3.8 V
30
1
20
10
0
–50
0
50
100
150
0
200 °C
0
5
10
15
20
Fig. 3–6: Typical supply current
versus ambient temperature
Fig. 3–8: Typ. Internal chopper frequency
versus supply voltage
kHz
100
HAL 5xx
90
fosc
30 V
VDD
TA
kHz
100
25
HAL 5xx
90
fosc
80
VDD = 3.8 V
70
80
70
TA = 25 °C
60
50
VDD = 4.5 V...24 V
TA = –40 °C
50
TA = 170 °C
40
40
30
30
20
20
10
10
0
–50
0
50
100
150
200 °C
TA
Fig. 3–7: Typ. internal chopper frequency
versus ambient temperature
Micronas
60
0
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 3–9: Typ. internal chopper frequency
versus supply voltage
11
HAL5xx
mV
400
mV
400
HAL 5xx
IO = 20 mA
HAL 5xx
IO = 20 mA
350
VOL
VDD = 3.8 V
VOL
300
300
VDD = 4.5 V
TA = 170 °C
VDD = 24 V
250
TA = 100 °C
200
200
TA = 25 °C
150
TA = –40 °C
100
100
50
0
0
5
10
15
20
25
30 V
0
–50
0
50
100
VDD
200 °C
TA
Fig. 3–10: Typical output low voltage
versus supply voltage
mV
600
150
Fig. 3–12: Typical output low voltage
versus ambient temperature
HAL 5xx
mA
104
HAL 5xx
IO = 20 mA
103
VOL
500
IOH 102
TA = 170 °C
101
400
TA = 150 °C
100
300
TA = 170 °C
TA =100 °C
200
100
10–1
TA = 100 °C
10–2
TA = 25 °C
10–3
TA = –40 °C
10–4
TA = 25 °C
TA = –40 °C
10–5
0
3
3.5
4.0
4.5
5.0
5.5
VDD
Fig. 3–11: Typical output low voltage
versus supply voltage
12
6.0 V
10–6
15
20
25
30
35 V
VOH
Fig. 3–13: Typical output high current
versus output voltage
Micronas
HAL5xx
µA
dBµV
80
HAL 5xx
102
HAL 5xx
VP = 12 V
TA = 25 °C
Quasi-PeakMeasurement
test circuit 2
70
101
IOH
VDD
VOH = 24 V
60
100
50
max. spurious
signals
10–1
40
VOH = 3.8 V
10–2
30
10–3
20
10–4
10–5
–50
10
0
50
100
150
200 °C
Fig. 3–14: Typical output leakage current
versus ambient temperature
IDD
0.10
1.00
1
10.00
100.00
10
100 1000.00
1000 MHz
f
TA
dBµA
30
0
0.01
Fig. 3–16: Typ. spectrum at supply voltage
HAL 5xx
VDD = 12 V
TA = 25 °C
Quasi-PeakMeasurement
20
max. spurious
signals
10
0
–10
–20
–30
0.01
0.10
1.00
1
10.00
100.00
10
100 1000.00
1000 MHz
f
Fig. 3–15: Typ. spectrum of supply current
Micronas
13
HAL501
4. Type Description
Applications
4.1. HAL 501
The HAL 501 is the optimal sensor for all applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
The HAL 501 is the most sensitive sensor of this family
with bipolar switching behavior (see Fig. 4–1).
– applications with large airgap or weak magnets,
– rotating speed measurement,
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
– CAM shaft sensors, and
– magnetic encoders.
Output Voltage
For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the
branded side of the package.
VO
BHYS
Magnetic Features:
VOL
– switching type: bipolar
– very high sensitivity
BOFF
0
BON
B
– typical BON: 0.5 mT at room temperature
Fig. 4–1: Definition of magnetic switching points for
the HAL 501
– typical BOFF: –0.7 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset BOFFSET
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
–40 °C
–0.8
0.6
2.5
–2.5
–0.8
0.8
0.5
1.4
2
25 °C
–0.5
0.5
2.3
–2.3
–0.7
0.5
0.5
1.2
1.9
100 °C
–0.9
0.5
2.5
–2.5
–0.6
0.9
0.5
1.1
1.8
0
mT
140 °C
–1.2
0.6
2.8
–2.5
–0.5
1.3
0.5
1.1
1.8
0
mT
170 °C
–1.5
0.7
3
–2.5
–0.2
2
0.4
0.9
1.8
0.2
mT
–0.1
–1.4
–0.1
mT
1.4
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
14
Micronas
HAL501
mT
3
BON
BOFF
mT
3
HAL 501
BON
BOFF
2
1
HAL 501
BONmax
2
BOFFmax
1
BON
BONtyp
0
0
BOFFtyp
–1
TA = –40 °C
–1
BOFF
–2
BONmin
VDD = 3.8 V
TA = 25 °C
VDD = 4.5 V... 24 V
–2
TA = 100 °C
BOFFmin
TA = 170 °C
–3
0
5
10
15
20
25
30 V
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
BON
BOFF
0
50
100
150
200 °C
TA, TJ
VDD
mT
3
–3
–50
HAL 501
Fig. 4–4: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
2
BON
1
0
BOFF
–1
TA = –40 °C
TA = 25 °C
–2
TA = 100 °C
TA = 170 °C
–3
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
Micronas
15
HAL502
4.2. HAL 502
Applications
The HAL 502 is the most sensitive latching sensor of this
family (see Fig. 4–5).
The HAL 502 is the optimal sensor for all applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
– applications with large airgap or weak magnets,
– rotating speed measurement,
– commutation of brushless DC motors,
– CAM shaft sensors, and
– magnetic encoders.
For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the
branded side of the package.
Output Voltage
Magnetic Features:
VO
– switching type: latching
BHYS
– high sensitivity
– typical BON: 2.6 mT at room temperature
VOL
– typical BOFF: –2.6 mT at room temperature
BOFF
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
0
BON
B
Fig. 4–5: Definition of magnetic switching points for
the HAL 502
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
–40 °C
1
2.8
5
–5
–2.8
–1
4.5
5.6
7.2
25 °C
1
2.6
4.5
–4.5
–2.6
–1
4.5
5.2
7
100 °C
0.95
2.5
4.4
–4.4
–2.5
–0.95
4
5
6.8
0
mT
140 °C
0.9
2.4
4.3
–4.3
–2.4
–0.9
3.7
4.8
6.8
0
mT
170 °C
0.9
2.3
4.3
–4.3
–2.3
–0.9
3.5
4.6
6.8
0
mT
0
–1.5
0
mT
1.5
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
16
Micronas
HAL502
mT
6
BON
BOFF
mT
6
HAL 502
BON
BOFF
4
BON
2
HAL 502
BONmax
4
BONtyp
2
BONmin
TA = –40 °C
TA = 25 °C
0
VDD = 3.8 V
0
TA = 100 °C
VDD = 4.5 V... 24 V
TA = 170 °C
BOFFmax
–2
–2
BOFFtyp
BOFF
–4
–4
BOFFmin
–6
0
5
10
15
20
25
30 V
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
BON
BOFF
0
50
100
150
200 °C
TA, TJ
VDD
mT
6
–6
–50
HAL 502
Fig. 4–8: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
4
BON
2
TA = –40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
–2
BOFF
–4
–6
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
Micronas
17
HAL503
4.3. HAL 503
Applications
The HAL 503 is a latching sensor (see Fig. 4–9).
The HAL 503 is the optimal sensor for applications with
alternating magnetic signals such as:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifter.
For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the
branded side of the package.
Output Voltage
VO
Magnetic Features:
BHYS
– switching type: latching
– medium sensitivity
VOL
– typical BON: 7.6 mT at room temperature
BOFF
– typical BOFF: –7.6 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
0
BON
B
Fig. 4–9: Definition of magnetic switching points for
the HAL 503
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
6.4
8.4
10.8
–10.8
–8.6
–6.4
14.6
17
20.6
6
7.6
10
–10
–7.6
–6
13.6
15.2
18
100 °C
4.8
7.1
9.5
–9.5
–6.9
–4.8
12.3
14
17
0.1
mT
140 °C
4.4
6.7
9.2
–9.2
–6.4
–4.4
11.5
13.1
16.5
0.1
mT
170 °C
4
6.4
8.9
–8.9
–6
–4
11
12.4
16
0.2
mT
–40 °C
25 °C
Min.
Typ.
Unit
Min.
Max.
–0.1
–1.5
0
mT
1.5
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
18
Micronas
HAL503
mT
12
mT
12
HAL 503
HAL 503
BONmax
BON
BOFF
BON
BON
BOFF
8
4
8
BONtyp
4
BONmin
TA = –40 °C
TA = 25 °C
0
VDD = 3.8 V
0
TA = 100 °C
VDD = 4.5 V... 24 V
TA = 170 °C
–4
–4
–8
–8
BOFFmax
BOFFtyp
BOFF
–12
0
5
10
15
20
25
BOFFmin
30 V
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
BON
BOFF
0
50
100
150
200 °C
TA, TJ
VDD
mT
12
–12
–50
HAL 503
Fig. 4–12: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
ambient temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
BON
8
4
TA = –40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
–4
–8
BOFF
–12
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
Micronas
19
HAL504
4.4. HAL 504
Applications
The HAL 504 is a unipolar switching sensor (see
Fig. 4–13).
The HAL 504 is the optimal sensor for applications with
one magnetic polarity such as:
– solid state switches,
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
– contactless solution to replace micro switches,
– position and end-point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
Output Voltage
VO
Magnetic Features:
BHYS
– switching type: unipolar
– medium sensitivity
VOL
– typical BON: 12 mT at room temperature
– typical BOFF: 7 mT at room temperature
0
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
BOFF
BON
B
Fig. 4–13: Definition of magnetic switching points for
the HAL 504
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
–40 °C
10.3
13
15.7
5.3
7.5
9.6
4.4
5.5
6.5
25 °C
9.5
12
14.5
5
7
9
4
5
6.5
100 °C
9
11.1
14.1
4.6
6.4
8.7
3.6
4.7
6.4
8.8
mT
140 °C
8.7
10.6
13.9
4.4
6.1
8.6
3.4
4.5
6.4
8.4
mT
170 °C
8.5
10.2
13.7
4.2
5.9
8.5
3.2
4.3
6.4
8
mT
10.2
7.2
9.5
mT
11.8
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
20
Micronas
HAL504
mT
18
BON
BOFF
mT
18
HAL 504
16
BON
BOFF
14
HAL 504
16
BONmax
14
BON
12
12
10
10
8
8
6
6
0
5
10
15
20
VDD = 3.8 V
VDD = 4.5 V... 24 V
25
30 V
0
–50
0
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–14: Typ. magnetic switching points
versus supply voltage
mT
18
BOFFmin
2
TA = 170 °C
0
BOFFtyp
4
TA = 100 °C
2
BOFFmax
BOFF
TA = –40 °C
TA = 25 °C
4
BONtyp
BONmin
HAL 504
Fig. 4–16: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
16
BON
BOFF
14
BON
12
10
8
6
TA = –40 °C
TA = 25 °C
4
TA = 100 °C
2
0
BOFF
TA = 170 °C
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–15: Typ. magnetic switching points
versus supply voltage
Micronas
21
HAL505
4.5. HAL 505
Applications
The HAL 505 is a latching sensor (see Fig. 4–17).
The HAL 505 is the optimal sensor for applications with
alternating magnetic signals such as:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifter.
For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the
branded side of the package.
Output Voltage
VO
Magnetic Features:
BHYS
– switching type: latching
– low sensitivity
VOL
– typical BON: 13.5 mT at room temperature
BOFF
– typical BOFF: –13.5 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
0
BON
B
Fig. 4–17: Definition of magnetic switching points for
the HAL 505
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
11.8
15
18.3
–18.3
–15
–11.8
26
30
34
11
13.5
17
–17
–13.5
–11
24
27
32
100 °C
10.2
12.4
16.6
–16.6
–12.4
–10.2
22
24.8
31.3
0
mT
140 °C
9.7
12
16.3
–16.3
–12
–9.7
21
24.2
31.3
0
mT
170 °C
9.4
11.7
16.1
–16.1
–11.7
–9.4
20
23.4
31.3
0
mT
–40 °C
25 °C
Min.
Typ.
Unit
Min.
Max.
0
–1.5
0
mT
1.5
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
22
Micronas
HAL505
mT
20
HAL 505
HAL 505
BONmax
BON
BON 15
BOFF
mT
20
BON 15
BOFF
10
BONtyp
10
5
5
TA = –40 °C
TA = 25 °C
0
TA = 170 °C
VDD = 4.5 V... 24 V
–5
BOFF
–10
VDD = 3.8 V
0
TA = 100 °C
–5
BONmin
BOFFmax
–10
BOFFtyp
–15
–15
–20
–20
–50
BOFFmin
0
5
10
15
20
25
30 V
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–18: Typ. magnetic switching points
versus supply voltage
mT
20
0
HAL 505
Fig. 4–20: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
ambient temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
BON
BON
BOFF
15
10
5
TA = –40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
–5
BOFF
–10
–15
–20
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–19: Typ. magnetic switching points
versus supply voltage
Micronas
23
HAL506
4.6. HAL 506
Applications
The HAL 506 is the most sensitive unipolar switching
sensor of this family (see Fig. 4–21).
The HAL 506 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic amplitude at the sensor position such as:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
– rotating speed measurement.
In the HAL 5xx family, the HAL 516 is a sensor with the
same magnetic characteristics but with an inverted output characteristic.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: unipolar
VOL
– high sensitivity
– typical BON: 5.5 mT at room temperature
0
– typical BOFF: 3.5 mT at room temperature
BOFF
BON
B
Fig. 4–21: Definition of magnetic switching points for
the HAL 506
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
–40 °C
4.3
5.9
7.7
2.1
3.8
5.4
1.6
2.1
2.8
25 °C
3.8
5.5
7.2
2
3.5
5
1.5
2
2.7
100 °C
3.6
5.1
7
1.9
3.3
4.9
1.2
1.8
2.6
4.2
mT
140 °C
3.4
4.8
6.9
1.8
3.1
5.1
1
1.7
2.6
4
mT
170 °C
3.2
4.6
6.8
1.7
3
5.2
0.9
1.6
2.6
3.8
mT
4.8
3.8
4.5
mT
6.2
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
24
Micronas
HAL506
mT
8
BON
BOFF
mT
8
HAL 506
7
BON
BON
BOFF
HAL 506
BONmax
7
6
6
5
5
BONtyp
BOFFmax
4
4
3
3
0
TA = 170 °C
0
5
10
15
20
30 V
0
–50
VDD = 4.5 V... 24 V
0
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–22: Typ. magnetic switching points
versus supply voltage
BON
BOFF
VDD = 3.8 V
1
25
mT
8
BOFFmin
2
TA = 100 °C
1
BOFFtyp
BOFF
TA = –40 °C
TA = 25 °C
2
BONmin
HAL 506
Fig. 4–24: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
7
BON
6
5
4
3
BOFF
TA = –40 °C
2
TA = 25 °C
TA = 100 °C
1
0
TA = 170 °C
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–23: Typ. magnetic switching points
versus supply voltage
Micronas
25
HAL508
4.7. HAL 508
Applications
The HAL 508 is a unipolar switching sensor (see
Fig. 4–25).
The HAL 508 is the optimal sensor for applications with
one magnetic polarity such as:
– solid state switches,
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
Output Voltage
VO
In the HAL 5xx family, the HAL 518 is a sensor with the
same magnetic characteristics but with an inverted output characteristic.
BHYS
Magnetic Features:
VOL
– switching type: unipolar
0
– medium sensitivity
BOFF
BON
B
Fig. 4–25: Definition of magnetic switching points for
the HAL 508
– typical BON: 18 mT at room temperature
– typical BOFF: 16 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
15.5
19
21.9
14
16.7
20
1.6
2.3
2.8
15
18
20.7
13.5
16
19
1.5
2
2.7
100 °C
13.9
16.6
20.4
12.5
14.8
18.7
1.2
1.8
2.6
15.7
mT
140 °C
13.2
15.8
20.2
11.9
14.1
18.5
1.1
1.7
2.6
15
mT
170 °C
12.7
15.3
20
11.4
13.6
18.3
1
1.7
2.6
14.4
mT
–40 °C
25 °C
Min.
Typ.
Unit
Min.
Max.
17.8
14
17
mT
20
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
26
Micronas
HAL508
mT
25
HAL 508
BON
BOFF 20
mT
25
HAL 508
BON
BOFF 20
BON
15
BONmax
BOFFmax
BONtyp
15
BOFFtyp
BOFF
BONmin
10
BOFFmin
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
0
TA = 170 °C
0
5
10
15
20
25
30 V
Fig. 4–26: Typ. magnetic switching points
versus supply voltage
HAL 508
BON
BOFF 20
0
–50
VDD = 4.5 V... 24 V
0
50
100
150
200 °C
TA, TJ
VDD
mT
25
VDD = 3.8 V
5
Fig. 4–28: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
BON
15
BOFF
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
0
TA = 170 °C
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–27: Typ. magnetic switching points
versus supply voltage
Micronas
27
HAL509
4.8. HAL 509
Applications
The HAL 509 is a unipolar switching sensor (see
Fig. 4–29).
The HAL 509 is the optimal sensor for applications with
one magnetic polarity and strong magnetic fields at the
sensor position such as:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
Output Voltage
VO
Magnetic Features:
– switching type: unipolar
BHYS
– low sensitivity
– typical BON: 26.8 mT at room temperature
VOL
– typical BOFF: 23.2 mT at room temperature
0
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
BOFF
BON
B
Fig. 4–29: Definition of magnetic switching points for
the HAL 509
– typical temperature coefficient of magnetic switching
points is –300 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
–40 °C
23.1
27.4
31.1
19.9
23.8
27.2
2.9
3.6
3.9
25 °C
23.1
26.8
30.4
19.9
23.2
26.6
2.8
3.5
3.9
100 °C
22.2
26.1
29.7
19.1
22.7
25.9
2.7
3.4
3.8
24.4
mT
140 °C
21.7
25.7
29.2
18.6
22.4
25.6
2.6
3.3
3.8
24
mT
170 °C
21.3
25.4
28.9
18.3
22.1
25.3
2.5
3.3
3.8
23.7
mT
25.6
21.5
25
mT
28.5
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
28
Micronas
HAL509
mT
35
HAL 509
mT
35
HAL 509
BONmax
BON 30
BOFF
BON 30
BOFF
BON
25
BOFFmax
BONtyp
25
BOFF
20
BOFFtyp
BONmin
20
BOFFmin
15
15
TA = –40 °C
TA = 25 °C
10
10
TA = 100 °C
TA = 170 °C
5
0
VDD = 3.8 V
0
5
10
15
20
25
30 V
Fig. 4–30: Typ. magnetic switching points
versus supply voltage
HAL 509
BON 30
BOFF
0
–50
0
50
100
150
200 °C
TA, TJ
VDD
mT
35
VDD = 4.5 V... 24 V
5
Fig. 4–32: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
BON
25
BOFF
20
15
TA = –40 °C
TA = 25 °C
10
TA = 100 °C
TA = 170 °C
5
0
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–31: Typ. magnetic switching points
versus supply voltage
Micronas
29
HAL516
4.9. HAL 516
Applications
The HAL 516 is the most sensitive unipolar switching
sensor with an inverted output of this family (see
Fig. 4–33).
The HAL 516 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as:
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
– rotating speed measurement.
In the HAL 5xx family, the HAL 506 is a sensor with the
same magnetic characteristics but with a normal output
characteristic.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: unipolar inverted
VOL
– high sensitivity
– typical BON: 3.5 mT at room temperature
0
– typical BOFF: 5.5 mT at room temperature
BON
BOFF
B
Fig. 4–33: Definition of magnetic switching points for
the HAL 516
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
2.1
3.8
5.4
4.3
5.9
7.7
1.6
2.1
2.8
2
3.5
5
3.8
5.5
7.2
1.5
2
2.7
100 °C
1.9
3.3
4.9
3.6
5.1
7
1.2
1.8
2.6
4.2
mT
140 °C
1.8
3.1
5.1
3.4
4.8
6.9
1
1.7
2.6
4
mT
170 °C
1.7
3
5.2
3.2
4.6
6.8
0.9
1.6
2.6
3.8
mT
–40 °C
25 °C
Min.
Typ.
Unit
Max.
4.8
3.8
4.5
mT
6.2
mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
30
Micronas
HAL516
mT
8
BON
BOFF
mT
8
HAL 516
7
BON
BOFF
6
HAL 516
BOFFmax
7
6
BOFF
5
BOFFtyp
5
BONmax
4
4
BOFFmin
BON
3
TA = –40 °C
TA = 25 °C
2
TA = 170 °C
0
5
10
15
20
30 V
0
–50
VDD = 4.5 V... 24 V
0
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–34: Typ. magnetic switching points
versus supply voltage
BON
BOFF
VDD = 3.8 V
1
25
mT
8
BONmin
2
TA = 100 °C
1
0
BONtyp
3
HAL 516
Fig. 4–36: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
7
BOFF
6
5
4
3
BON
TA = –40 °C
2
TA = 25 °C
TA = 100 °C
1
0
TA = 170 °C
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–35: Typ. magnetic switching points
versus supply voltage
Micronas
31
HAL517
4.10. HAL 517
Applications
The HAL 517 is a unipolar switching sensor with inverted
output (see Fig. 4–37).
The HAL 517 is the optimal sensor for applications with
one magnetic polarity where an inverted output signal is
required such as:
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
Output Voltage
Magnetic Features:
VO
– switching type: unipolar inverted
BHYS
– medium sensitivity
– typical on point is 16.2 mT at room temperature
VOL
– typical off point is 18.3 mT at room temperature
0
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
BON
BOFF
B
Fig. 4–37: Definition of magnetic switching points for
the HAL 517
– typical temperature coefficient of magnetic switching
points is –1700 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
14
17.1
21.5
15.5
19.6
22.5
1.6
2.5
3
13.5
16.2
19
15
18.3
20.7
1.5
2.1
2.7
100 °C
11
14.3
18.5
12.8
16.1
20.4
1.2
1.8
2.6
15.2
mT
140 °C
10
13.2
18.2
11.5
14.8
20.2
1
1.6
2.6
14
mT
170 °C
9
12.3
18
10.5
13.7
20
0.8
1.4
2.4
13
mT
–40 °C
25 °C
Min.
Typ.
Unit
Min.
Max.
18.3
14
17.2
mT
20
mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
32
Micronas
HAL517
mT
25
HAL 517
BON
BOFF 20
mT
25
HAL 517
BON
BOFF 20
BOFF
BOFFmax
BONmax
15
BOFFtyp
15
BONtyp
BON
10
BOFFmin
BONmin
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
0
TA = 170 °C
0
5
10
15
20
25
30 V
Fig. 4–38: Typ. magnetic switching points
versus supply voltage
HAL 517
BON
BOFF 20
0
–50
VDD = 4.5 V... 24 V
0
50
100
150
200 °C
TA, TJ
VDD
mT
25
VDD = 3.8 V
5
Fig. 4–40: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
ambient temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
BOFF
15
BON
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
0
TA = 170 °C
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–39: Typ. magnetic switching points
versus supply voltage
Micronas
33
HAL518
4.11. HAL 518
Applications
The HAL 518 is a unipolar switching sensor with inverted
output (see Fig. 4–41).
The HAL 518 is the optimal sensor for applications with
one magnetic polarity where an inverted output signal is
required such as:
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
Output Voltage
In the HAL 5xx family, the HAL 508 is a sensor with the
same magnetic characteristics but with a normal output
characteristic.
VO
BHYS
Magnetic Features:
VOL
– switching type: unipolar inverted
– medium sensitivity
0
– typical BON: 16 mT at room temperature
BON
BOFF
B
Fig. 4–41: Definition of magnetic switching points for
the HAL 518
– typical BOFF: 18 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
14
16.7
20
15.5
19
22
1.5
2.3
3
25 °C
13.5
16
19
15
18
20.7
1.4
2
2.8
100 °C
12.5
14.8
18.7
13.9
16.6
20.4
1
1.8
2.7
15.7
mT
140 °C
11.7
14.1
18.5
13
15.8
20.2
0.9
1.7
2.7
15
mT
170 °C
11
13.6
18.3
12.2
15.3
20
0.8
1.7
2.6
14.4
mT
–40 °C
Min.
Typ.
Unit
Min.
Max.
17.8
14
17
mT
20
mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
34
Micronas
HAL518
mT
25
HAL 518
BON
BOFF 20
mT
25
HAL 518
BON
BOFF 20
BOFF
BOFFmax
BONmax
15
BOFFtyp
15
BONtyp
BON
BOFFmin
BONmin
10
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
0
TA = 170 °C
0
5
10
15
20
25
30 V
Fig. 4–42: Typ. magnetic switching points
versus supply voltage
HAL 518
BON
BOFF 20
0
–50
VDD = 4.5 V... 24 V
0
50
100
150
200 °C
TA, TJ
VDD
mT
25
VDD = 3.8 V
5
Fig. 4–44: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
BOFF
15
BON
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
0
TA = 170 °C
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–43: Typ. magnetic switching points
versus supply voltage
Micronas
35
HAL519
4.12. HAL 519
Applications
The HAL 519 is a very sensitive unipolar switching sensor with an inverted output sensitive only to the magnetic
north polarity. (see Fig. 4–45).
The HAL 519 is the optimal sensor for all applications
with the north magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output
signal is required such as:
The output turns high with the magnetic north pole on the
branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the
magnetic south pole on the branded side, the output remains low. For correct functioning in the application, the
sensor requires only the magnetic north pole on the
branded side of the package.
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
Output Voltage
Magnetic Features:
VO
– switching type: unipolar inverted, north sensitive
BHYS
– high sensitivity
– typical BON: –3.5 mT at room temperature
VOL
– typical BOFF: –5.5 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
BOFF
BON
0
B
Fig. 4–45: Definition of magnetic switching points for
the HAL 519
– typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
–5.4
–3.8
–2.1
–7.7
–5.9
–4.3
1.6
2.1
2.8
–5
–3.6
–2
–7.2
–5.5
–3.8
1.5
1.9
2.7
100 °C
–4.9
–3.3
–1.9
–6.7
–5
–3.4
1.2
1.7
2.6
–4.2
mT
140 °C
–5.1
–3.1
–1.7
–6.8
–4.8
–3.1
1
1.7
2.6
–4
mT
170 °C
–5.2
–3
–1.5
–6.8
–4.6
–2.8
0.9
1.6
2.6
–3.8
mT
–40 °C
25 °C
Min.
Typ.
Unit
Min.
Max.
–4.8
–6.2
–4.5
mT
–3.8
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
36
Micronas
HAL519
mT
0
HAL 519
TA = –40 °C
TA = 25 °C
BON –1
BOFF
HAL 519
VDD = 3.8 V
VDD = 4.5 V...24 V
BON –1
BOFF
TA = 100 °C
TA = 170 °C
–2
mT
0
BONmax
–2
–3
–3
BON
BONtyp
–4
–4
–5
–5
BOFFmax
BONmin
BOFF
–6
–6
–7
–7
BOFFtyp
BOFFmin
–8
0
5
10
15
20
25
30 V
0
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–46: Typ. magnetic switching points
versus supply voltage
mT
0
–8
–50
HAL 519
TA = –40 °C
Fig. 4–48: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
TA = 25 °C
BON –1
BOFF
TA = 100 °C
TA = 170 °C
–2
BON
–3
–4
–5
–6
BOFF
–7
–8
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–47: Typ. magnetic switching points
versus supply voltage
Micronas
37
HAL523
4.13. HAL 523
Applications
The HAL 523 is the least sensitive unipolar switching
sensor of this family (see Fig. 4–49).
The HAL 523 is the optimal sensor for applications with
one magnetic polarity and strong magnetic fields at the
sensor position such as:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
Output Voltage
VO
Magnetic Features:
– switching type: unipolar
BHYS
– low sensitivity
– typical BON: 34.5 mT at room temperature
VOL
– typical BOFF: 24 mT at room temperature
0
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
BOFF
BON
B
Fig. 4–49: Definition of magnetic switching points for
the HAL 523
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
–40 °C
28
34.5
42
18
24
30
7
10.5
14
29.3
mT
25 °C
28
34.5
42
18
24
30
7
10.5
14
29.3
mT
100 °C
28
34.5
42
18
24
30
7
10.5
14
29.3
mT
140 °C
28
34.5
42
18
24
30
7
10.5
14
29.3
mT
170 °C
28
34.5
42
18
24
30
7
10.5
14
29.3
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
38
Micronas
HAL523
mT
45
mT
45
HAL 523
HAL 523
BONmax
BON
BOFF
40
BON
BOFF
BON
35
30
40
30
BOFF
25
25
20
15
15
TA = 25 °C
TA = 100 °C
10
BONmin
BOFFtyp
BOFFmin
VDD = 3.8 V
10
TA = 170 °C
5
VDD = 4.5 V...24 V
5
0
5
10
15
20
25
30 V
Fig. 4–50: Typ. magnetic switching points
versus supply voltage
mT
45
0
–50
0
50
100
150
200 °C
TA, TJ
VDD
BON
BOFF
BOFFmax
20
TA = –40 °C
0
BONtyp
35
HAL 523
Fig. 4–52: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
40
BON
35
30
BOFF
25
20
TA = –40 °C
15
TA = 25 °C
TA = 100 °C
10
TA = 170 °C
5
0
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–51: Typ. magnetic switching points
versus supply voltage
Micronas
39
HAL5xx
5. Application Notes
5.4. EMC and ESD
5.1. Ambient Temperature
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see figures 5–1). The series resistor
and the capacitor should be placed as closely as possible to the HAL sensor.
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient temperature TA).
TJ = TA + ∆T
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
At static conditions, the following equation is valid:
∆T = IDD * VDD * Rth
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax – ∆T
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating
Conditions (see page 7).
Note: The international standard ISO 7637 is similar to
the used product standard DIN 40839.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV
220 Ω
1
RL
VDD
VEMC
VP
1.2 kΩ
OUT
3
4.7 nF
20 pF
2
GND
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Fig. 5–1: Test circuit for EMC investigations
Note: The functionality of the sensor below 3.8 V has not
been tested. For special test conditions, please contact
Micronas.
5.3. Start-up Behavior
Due to the active offset compensation, the sensors have
an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
the Electrical Characteristics (see page 8).
During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output
will be low if the applied magnetic field B is above BON.
The output will be high if B is below BOFF. In case of sensors with an inverted switching behavior (HAL 516 ...
HAL519), the output state will be high if B > BOFF and low
if B < BON.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be either
low or high. In order to achieve a well-defined output
state, the applied magnetic field must be above BONmax,
respectively, below BOFFmin.
40
Micronas
HAL5xx
Micronas
41
HAL5xx
42
Micronas
HAL5xx
Micronas
43
HAL5xx
6. Data Sheet History
1. Final data sheet: “HAL 501...506, 508, 509, 516...
518, Hall Effect Sensor Family, Aug. 11, 1999,
6251-485-1DS. First release of the final data sheet.
Major changes to the previous edition “HAL501 ...
HAL506, HAL 508”, Hall Effect Sensor ICs, May 5,
1997, 6251-405-1DS:
– additional types: HAL509, HAL516 ... HAL518
– additional package SOT-89B
– additional temperature range “K”
– outline dimensions for SOT-89A and TO-92UA
changed
– absolute maximum ratings changed
– electrical characteristics changed
– magnetic characteristics for HAL 501, HAL 503,
HAL 506, and HAL 509 changed
2. Final data sheet: “HAL 501...506, 508, 509, 516...
519, 523, Hall Effect Sensor Family”, Feb. 14, 2001,
6251-485-2DS. Second release of the final data
sheet. Major changes:
– additional types: HAL519, HAL523
– phased-out package SOT-89A removed
– temperature range “C” removed
– outline dimensions for SOT-89B: reduced tolerances
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: [email protected]
Internet: www.micronas.com
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (02/01)
Order No. 6251-485-2DS
44
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on
a retrieval system, or transmitted without the express written consent
of Micronas GmbH.
Micronas