Micropower CMOS Output Hall Effect Switch General Description EC2621 Features EC2621 Hall-effect sensor is a temperature stable, stress- CMOS Hall IC Technology resistant, Low Tolerance of Sensitivity micro-power switch. Strong RF noise protection Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes 1.65 to 3.5V for battery-powered applications chopper-stabilization. This method reduces the offset Omni polar, output switches with absolute value of voltage normally caused by device over molding, North or South pole from magnet temperature dependencies, and thermal stress. Operation down to 1.65V, Micro power consumption High Sensitivity for reed switch replacement EC2621 is special made for low operation voltage, 1.65V, to active the chip which is includes the following on a applications Multi Small Size option single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Low sensitivity drift in crossing of Temp. range Schmitt trigger, CMOS output driver. Advanced CMOS Ultra Low power consumption at 5uA (Avg) wafer fabrication processing is used to take advantage of High ESD Protection, HMB > ±4KV( min ) low-voltage requirements, component matching, Very low Totem-pole output input-offset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation. Applications The package type is in a Halogen Free version has been verified by third party Lab. Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set) Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications Water Meter Floating Meter PDVD NB E-CMOS Corp. (www.ecmos.com.tw)) Page 1 of 7 5F08N-Rev. F006 EC2621 Micropower CMOS Output Hall Effect Switch Ordering Information EC2621 NN XX G R R：Tape & Reel G：Green package Package code: T1：TSOT23-3L BC：SOT553 Q1：QFN(2×2)-3L A6：TO92-3L Type Part No. TSOT23-3L EC2621NNT1GR SOT553 EC2621NNBCGR QFN2x2-3L EC2621NNQ1GR TO92-3L EC2621NNA6GR Marking 2621 Marking Information LLLL：Lot No LLLL 21YW 21 YW：Date Code YW：Date Code YW 2621 LLLL：Lot No LLLL Pin Assignment Pin Definitions Pin No. Symbol 1 VDD 2 3 OUT GND Description Power Supply Input Output Pin. Ground Pin E-CMOS Corp. (www.ecmos.com.tw)) Page 2 of 7 5F08N-Rev. F006 EC2621 Micropower CMOS Output Hall Effect Switch Block Diagram VDD Awake/Sleep Timing Control Control Offset Cancellation Amp Out Logic GND Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. Absolute Maximum Ratings At TA=25℃ Characteristics Values Unit Supply voltage,(VDD) 4.5 V Output Voltage,(VOUT) 4.5 V Reverse Voltage , (VDD) (VOUT) -0.3 V Unlimited Gauss 1 mA Operating temperature range, (TA) -40 to +85 ℃ Storage temperature range, (TS) -65 to +150 ℃ Maximum Junction Temp,(TJ) 150 ℃ Supply voltage,(VDD) 4.5 V Output Voltage,(VOUT) 4.5 V TSOT23-3L 310 ℃/W SOT553 540 ℃/W QFN2x2-3L 206 ℃/W TO92-3L 543 ℃/W TSOT23-3L 223 ℃/W SOT553 390 ℃/W QFN2x2-3L 148 ℃/W TO92-3L 410 ℃/W TSOT23-3L 400 mW SOT223 230 mW QFN2x2-3L 606 mW TO92-3L 230 mW Magnetic flux density Output current,(IOUT) Thermal Resistance(θJA) Thermal Resistance(θJC) Package Power Dissipation, (PD) Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. E-CMOS Corp. (www.ecmos.com.tw)) Page 3 of 7 5F08N-Rev. F006 EC2621 Micropower CMOS Output Hall Effect Switch Electrical Specifications DC Operating Parameters：TA=25℃, VDD=1.8V Parameters Test Conditions Min Supply Voltage,(VDD) Operating 1.65 Supply Current,(IDD) Awake State 1.4 Sleep State Average Output Leakage Current,(Ioff) Output High Voltage,(VOH) Typ Max Units 3.5 V 3 mA 3.6 7 μA 5 10 μA 1 uA Output off IOUT=0.5mA(Source) VDD- V 0.12 Output Low Voltage,(VOL) IOUT=0.5mA(Sink) Awake mode time,(TAW) Operating Sleep mode time,(TSL) Operating Duty Cycle,(D,C) 0.12 V 40 80 uS 40 80 mS 0.1 Electro-Static Discharge HBM % 4 KV Magnetic Specifications DC Operating Parameters：TA=25℃, VDD=1.8V Parameter Symbol Test Conditions Min. Operating BOPS S pole to branded side, B > BOP, Vout On Point BOPN N pole to branded side, B > BOP, Vout On -55 10 Typ. Max. Units 30 55 Gauss -30 Release BRPS S pole to branded side, B < BRP, Vout Off Point BRPN N pole to branded side, B < BRP, Vout Off -20 Hysteresis BHYS |BOPx - BRPx| 10 Gauss 20 Gauss -10 Gauss Gauss Output Behavior versus Magnetic Polar DC Operating Parameters：TA = -40 to 85℃, VDD =1.8V to 3.5V Parameter Test condition OUT(TSOT23-3L) Test condition OUT(SOT553) South pole B<Bop[(-55)~(-10)] Low B<Bop[(-55)~(-10)] Low Null or weak magnetic field B=0 or B < BRP High B=0 or B < BRP High North pole B>Bop(55~10) Low B>Bop(55~10) Low Parameter Test condition OUT(TSOT23-3L) Test condition OUT(SOT553) South pole B<Bop[(-55)~(-10)] Low B<Bop[(-55)~(-10)] Low E-CMOS Corp. (www.ecmos.com.tw)) Page 4 of 7 5F08N-Rev. F006 Micropower CMOS Output Hall Effect Switch EC2621 Typical Application circuit E-CMOS Corp. (www.ecmos.com.tw)) Page 5 of 7 5F08N-Rev. F006 Micropower CMOS Output Hall Effect Switch EC2621 Sensor Location and package dimension E-CMOS Corp. (www.ecmos.com.tw)) Page 6 of 7 5F08N-Rev. F006 Micropower CMOS Output Hall Effect Switch E-CMOS Corp. (www.ecmos.com.tw)) Page 7 of 7 EC2621 5F08N-Rev. F006