FQU20N06L N-Channel QFET® MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 17.2 A, 60 V, RDS(on) = 42 mΩ (Max.) @ VGS = 10 V, ID = 8.6 A • Low Gate Charge (Typ. 9.5 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers D G D G S I-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. FQU20N06LTU Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) 60 Unit V 17.2 A 10.9 A 68.8 A IDM Drain Current VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 170 mJ IAR Avalanche Current (Note 1) 17.2 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 3.8 7.0 2.5 mJ V/ns W 38 0.30 -55 to +150 W W/°C °C 300 °C dv/dt PD (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Pulsed - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds. Thermal Characteristics Symbol RJC RJA Parameter FQU20N06LTU 3.28 Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 Unit 1 110 oC/W 50 www.fairchildsemi.com FQU20N06L — N-Channel QFET® MOSFET December 2013 Part Number Electrical Characteristics Symbol Package IPAK Top Mark FQU20N06L FQU20N06LTU Packing Method Tube Reel Size Tape Width N/A N/A Quantity 70 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 8.6 A VGS =5 V, ID =8.6 A --- 0.046 0.057 0.06 0.075 Ω gFS Forward Transconductance VDS = 25 V, ID = 8.6 A -- 11 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 480 630 pF -- 175 230 pF -- 35 45 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 10.5 A, RG = 25 Ω (Note 4) VDS = 48 V, ID = 21 A, VGS = 5 V (Note 4) -- 10 30 ns -- 165 340 ns -- 35 80 ns -- 70 150 ns -- 9.5 13 nC -- 2.5 -- nC -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 17.2 A ISM -- -- 68.8 A -- -- 1.5 V -- 54 -- ns -- 75 -- nC VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 17.2 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IF = 21 A, dIF / dt = 100 A/µs Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 670 µH, IAS = 17.2 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 21 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating tmperature. ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 2 www.fairchildsemi.com FQU20N06L — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 0 10 150℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 25V 2. 250μ s Pulse Test 25℃ -55℃ 0 10 -1 -1 0 10 10 1 10 0 10 2 6 4 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 80 VGS = 5V IDR, Reverse Drain Current [A] R DS(ON) [mΩ ], Drain-Source On-Resistance 100 VGS = 10V 60 40 ※ Note : TJ = 25℃ 1 10 0 10 ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ 150℃ 20 0 10 20 30 40 50 60 -1 10 ID, Drain Current [A] 0.2 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1500 0.4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 V GS , Gate-Source Voltage [V] VDS = 30V Capacitance [pF] 1000 Coss Ciss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 500 Crss VDS = 48V 8 6 4 2 ※ Note : ID = 21A 0 0 -1 10 0 0 10 8 12 16 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 4 1 10 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQU20N06L — N-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.5 1.0 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 ※ Notes : 1. VGS = 10 V 2. ID = 8.6 A 0.5 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3 20 10 Operation in This Area is Limited by R DS(on) 2 15 ID , Drain Current [A] ID , Drain Current [A] 10 100 µ s 1 ms 1 10 ms 10 DC 0 10 ※ Notes : 10 5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 0 25 10 -1 0 10 1 10 2 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 ※ N otes : 1 . Z θ J C( t ) = 3 . 2 8 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 10 0 .0 2 0 .0 1 -1 PDM s in g le p u ls e t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 4 www.fairchildsemi.com FQU20N06L — N-Channel QFET® MOSFET Typical Characteristics FQU20N06L — N-Channel QFET® MOSFET 200nF 12V VGS Same Type as DUT 50KΩ Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 6 www.fairchildsemi.com FQU20N06L — N-Channel QFET® MOSFET DUT FQU20N06L — N-Channel QFET® MOSFET Mechanical Dimensions FQU13N06LTU Figure 16. TO251 (I-PAK), Molded, 3-Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003 ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 8 www.fairchildsemi.com FQU20N06L — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® SM BitSiC™ Global Power Resource PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ SuperSOT™-6 OptoHiT™ FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™