IRF IPS0151 Fully protected power mosfet switch Datasheet

Data Sheet No.PD60144-K
IPS0151(S)
FULLY PROTECTED POWER MOSFET SWITCH
Features
•
•
•
•
•
Product Summary
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS0151/IPS0151S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh environments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 35A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetizations.
Rds(on)
25mΩ (max)
V clamp
50V
Ishutdown
35A
Ton/Toff
1.5µs
Packages
3-Lead D2 Pak
IPS0151S
3-Lead TO-220
PS0151
Typical Connection
L o ad
R in se rie s
( if n e e d e d )
D
IN
L o g ic sig n a l
c o n t ro l
S
(Refer to lead assignment for correct pin configuration)
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1
IPS0151(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.
Symbol Parameter
Min.
Max.
—
47
Maximum Input voltage
-0.3
7
V
Maximum IN current
-10
+10
mA
rth=62oC/W IPS0151
—
2.8
rth=5oC/W
IPS015135
—
35
IPS0151S
—
2.2
—
45
Vds
Maximum drain to source voltage
Vin
Iin, max
Isd cont.
Diode max. continuous current (1)
rth=80oC/W
Isd pulsed Diode max. pulsed current (1)
Units
Test Conditions
TO220 free air
TO220 with Rth=5oC/W
SMD220 Std footprint
A
(1)
Pd
Maximum power dissipation
(rth=62 oC/W) IPS0151
—
2
(rth=80oC/W) IPS0151S
—
1.56
ESD1
Electrostatic discharge voltage (Human Body)
—
4
ESD2
Electrostatic discharge voltage (Machine Model)
—
0.5
T stor.
Tj max.
Max. storage temperature
-55
150
Max. junction temperature
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
—
300
Min.
Typ.
—
—
—
—
—
55
2
60
35
2
W
C=100pF, R=1500Ω,
kV
o
C=200pF, R=0Ω, L=10µH
C
Thermal Characteristics
Symbol Parameter
Rth
Rth
Rth
Rth
Rth
1
2
1
2
3
Thermal
Thermal
Thermal
Thermal
Thermal
resistance
resistance
resistance
resistance
resistance
free air
junction to case
with standard footprint
with 1" square footprint
junction to case
Max. Units Test Conditions
—
a
—
—
—
TO-220
o
C/W
D2PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Vds (max)
VIH
VIL
I ds
—
4
0
35
6
0.5
—
—
0.2
—
0
4.3
3.8
5
1
1
Continuous drain to source voltage
High level input voltage
Low level input voltage
Continuous drain current
Tamb=85 o C
(TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS0151
(TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS0151S
Rin
Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V)
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application Notes.
2
Units
V
A
kΩ
µS
kHz
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IPS0151(S)
Static Electrical Characteristics
(Tj = 25oC unless otherwise specified.)
Symbol Parameter
Rds(on)
Idss1
Min.
Typ.
ON state resistance Tj = 25 C
Tj = 150oC
Drain to source leakage current
10
—
0
20
35
0.5
25
45
25
Drain to source leakage current
0
5
50
Drain to source clamp voltage 1
Drain to source clamp voltage 2
IN to source clamp voltage
IN threshold voltage
ON state IN positive current
OFF state IN positive current
47
50
7
1
25
50
52
55
8.1
1.6
90
130
56
60
9.5
2
200
250
o
Max. Units Test Conditions
@Tj=25oC
Idss2
mΩ
Vin = 5V, Ids = 1A
Vcc = 14V, Tj = 25oC
µA
Vcc = 40V, Tj = 25oC
@Tj=25oC
V clamp 1
V clamp 2
Vin clamp
Vin th
Iin, -on
Iin, -off
V
µA
Id = 20mA (see Fig.3 & 4)
Id=Ishutdown (see Fig.3 & 4)
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 3Ω, Rinput = 50Ω, 100us pulse, Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Min.
Typ. Max. Units Test Conditions
Ton
Tr
Trf
T off
Tf
Qin
0.05
0.2
—
0.8
0.4
—
0.25
0.9
3.8
1.5
1.1
30
Turn-on delay time
Rise time
Time to (final Rds(on) 1.3%)
Turn-off delay time
Fall time
Total gate charge
0.6
1.5
—
2
2
—
See figure 2
µs
See figure 2
nC
Vin = 5V
Protection Characteristics
Symbol Parameter
Min.
Typ.
T sd
I sd
Vreset
Treset
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
—
20
1.5
2
165
35
2.3
10
—
50
3
40
o
C
A
V
µs
See fig. 1
See fig. 1
EOI_OT
Short circuit energy (see application note)
—
400
—
µJ
Vcc = 14V
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Max. Units Test Conditions
Vin = 0V, Tj = 25oC
3
IPS0151(S)
Functional Block Diagram
All values are typical
DRAIN
47 V
200 Ω
IN
8.1 V
S
Q
R
Q
200 kΩ
I sense
80 µA
T > 165°c
I > Isd
SOURCE
Lead Assignments
2 (D)
2 (D)
1
3
In D S
1
In
2
D
3
S
TO-220
D2PAK (SMD220)
IPS0151
IPS0151S
Part Number
4
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IPS0151(S)
Vin
5V
90 %
0V
Vin 10 %
Tr-in
Ids
t < T reset
t > T reset
I shutdown
90 %
Isd
Ids
10 %
Td on
Td off
tf
tr
T
T shutdown
Tsd
Vds
(165 °c)
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
Vin
L
Rem : V load is negative
during demagnetization
V load
+
R
14 V
-
Ids
Vds clamp
Vin
( Vcc )
Vds
5v
0v
D
IN
Vds
S
Ids
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
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Figure 4 - Active clamp test circuit
5
IPS0151(S)
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
60
200%
180%
50
160%
140%
40
120%
30
100%
Tj = 150oC
80%
20
60%
Tj = 25oC
40%
10
20%
0
0
1
2
3
4
5
6
7
8
Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)
8
0%
-50 -25
0
25
50
75 100 125 150 175
Figure 6 - Normalised Rds ON (%) Vs Tj (oC)
8
toff delay
ton delay
7
7
rise tim e
6
6
130% final
rdson
5
5
4
4
3
3
2
2
1
1
0
0
0
1
2
3
4
5
6
7
8
Figure 7 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs Input Voltage (V)
6
fall tim e
0
1
2
3
4
5
6
7
8
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
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IPS0151(S)
100
100
10
10
1
1
delay off
fall tim e
delay o n
r is e t i me
1 3 0% r ds o n
0 .1
0 .1
10
10
100
1000
100
1000
10000
10000
Figure 9 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds (on) (us) Vs IN Resistor (Ω)
Figure 10 - Turn-OFF Delay Time & Fall Time (us)
Vs IN Resistor (Ω)
50
50
45
45
40
40
35
35
30
30
25
25
20
20
Isd 25°C
15
15
10
10
Ilim 25°C
5
5
0
0
1
2
3
4
5
6
7
8
Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V)
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0
-50 -25
0
25
50
75 100 125 150
Figure 12 - Ishutdown (A) Vs Temperature (oC)
7
IPS0151(S)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-50
100
rth = 5°C/W
rth = 15°C/W
SMD220 1'' footprint
SMD220 std. footprint
Current path capability
should be above this
10
Load characteristic should
be below this curve
T=25°C
0
50
100
150
200
1
Figure 13 - Max.Cont. Ids (A) Vs Ambient
Temperature (oC)
single pulse
100 Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
100
T=100°C
Figure 14 - Max.Cont. Ids (A) Vs Ambient
Temperature (oC)
100
10
10
1
1
Figure 15 - Iclamp (A) Vs Inductive Load (mH)
1E+03
1E+02
1E+01
100
1E-01
10
1E-02
1
1E-03
0 .1
1E-04
0 .0 1
1E-05
0 .0 1
1E+00
rth junction to case =
1.8°C/W
0.1
8
rth free air TO220, s td
footprint SMD220
0 .1
Vbat = 14 V
Tjini = T sd
0 .0 0 1
Single pulse
Figure 16 - Transient Thermal Imped. (oC/W)
Vs Time (s) - IPS0151/IPS051S
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IPS0151(S)
200
120%
180
115%
160
110%
140
120
105%
100
100%
80
95%
60
90%
40
Iin,on
20
Iin,off
85%
0
80%
-50 -25
0
-50
-25
25
50
75
100 125 150
Figure 17 - Input current (µA) Vs Junction (oC)
16
14
Treset
rise tim e
12
fall tim e
Vds clam p @ Isd
Vin clam p @ 10m A
0
25
50
75 100 125 150
Figure 18 - Vin clamp and V clamp2 (V)
Vs Tjunction (oC)
10
8
6
4
2
0
-50
-25
0
25
50
75
100 125 150
Figure 19 - Turn-on, Turn-off, and Treset (µs)
Vs Tjunction (oC)
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IPS0151(S)
Case Outline
2
NOTES:
2X
3-Lead TO-220AB
10
01-6024 00
IRGB 01-3026 01 (TO-220AB)
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IPS0151(S)
Case Outline
3-Lead D2PAK
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01-6022 00
115-0088 10 (TO-263AB)
11
IPS0151(S)
Tape & Reel - D2PAK (SMD220)
01-3072 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 11/13/2001
12
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