Data Sheet No.PD60144-K IPS0151(S) FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 35A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Rds(on) 25mΩ (max) V clamp 50V Ishutdown 35A Ton/Toff 1.5µs Packages 3-Lead D2 Pak IPS0151S 3-Lead TO-220 PS0151 Typical Connection L o ad R in se rie s ( if n e e d e d ) D IN L o g ic sig n a l c o n t ro l S (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS0151(S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Min. Max. — 47 Maximum Input voltage -0.3 7 V Maximum IN current -10 +10 mA rth=62oC/W IPS0151 — 2.8 rth=5oC/W IPS015135 — 35 IPS0151S — 2.2 — 45 Vds Maximum drain to source voltage Vin Iin, max Isd cont. Diode max. continuous current (1) rth=80oC/W Isd pulsed Diode max. pulsed current (1) Units Test Conditions TO220 free air TO220 with Rth=5oC/W SMD220 Std footprint A (1) Pd Maximum power dissipation (rth=62 oC/W) IPS0151 — 2 (rth=80oC/W) IPS0151S — 1.56 ESD1 Electrostatic discharge voltage (Human Body) — 4 ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 T stor. Tj max. Max. storage temperature -55 150 Max. junction temperature -40 +150 Tlead Lead temperature (soldering, 10 seconds) — 300 Min. Typ. — — — — — 55 2 60 35 2 W C=100pF, R=1500Ω, kV o C=200pF, R=0Ω, L=10µH C Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance resistance resistance resistance resistance free air junction to case with standard footprint with 1" square footprint junction to case Max. Units Test Conditions — a — — — TO-220 o C/W D2PAK (SMD220) Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vds (max) VIH VIL I ds — 4 0 35 6 0.5 — — 0.2 — 0 4.3 3.8 5 1 1 Continuous drain to source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 o C (TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS0151 (TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS0151S Rin Recommended resistor in series with IN pin Tr-in (max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Application Notes. 2 Units V A kΩ µS kHz www.irf.com IPS0151(S) Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter Rds(on) Idss1 Min. Typ. ON state resistance Tj = 25 C Tj = 150oC Drain to source leakage current 10 — 0 20 35 0.5 25 45 25 Drain to source leakage current 0 5 50 Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current 47 50 7 1 25 50 52 55 8.1 1.6 90 130 56 60 9.5 2 200 250 o Max. Units Test Conditions @Tj=25oC Idss2 mΩ Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC µA Vcc = 40V, Tj = 25oC @Tj=25oC V clamp 1 V clamp 2 Vin clamp Vin th Iin, -on Iin, -off V µA Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered Switching Electrical Characteristics Vcc = 14V, Resistive Load = 3Ω, Rinput = 50Ω, 100us pulse, Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Tr Trf T off Tf Qin 0.05 0.2 — 0.8 0.4 — 0.25 0.9 3.8 1.5 1.1 30 Turn-on delay time Rise time Time to (final Rds(on) 1.3%) Turn-off delay time Fall time Total gate charge 0.6 1.5 — 2 2 — See figure 2 µs See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter Min. Typ. T sd I sd Vreset Treset Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection — 20 1.5 2 165 35 2.3 10 — 50 3 40 o C A V µs See fig. 1 See fig. 1 EOI_OT Short circuit energy (see application note) — 400 — µJ Vcc = 14V www.irf.com Max. Units Test Conditions Vin = 0V, Tj = 25oC 3 IPS0151(S) Functional Block Diagram All values are typical DRAIN 47 V 200 Ω IN 8.1 V S Q R Q 200 kΩ I sense 80 µA T > 165°c I > Isd SOURCE Lead Assignments 2 (D) 2 (D) 1 3 In D S 1 In 2 D 3 S TO-220 D2PAK (SMD220) IPS0151 IPS0151S Part Number 4 www.irf.com IPS0151(S) Vin 5V 90 % 0V Vin 10 % Tr-in Ids t < T reset t > T reset I shutdown 90 % Isd Ids 10 % Td on Td off tf tr T T shutdown Tsd Vds (165 °c) Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin L Rem : V load is negative during demagnetization V load + R 14 V - Ids Vds clamp Vin ( Vcc ) Vds 5v 0v D IN Vds S Ids ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com Figure 4 - Active clamp test circuit 5 IPS0151(S) All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 60 200% 180% 50 160% 140% 40 120% 30 100% Tj = 150oC 80% 20 60% Tj = 25oC 40% 10 20% 0 0 1 2 3 4 5 6 7 8 Figure 5 - Rds ON (mΩ) Vs Input Voltage (V) 8 0% -50 -25 0 25 50 75 100 125 150 175 Figure 6 - Normalised Rds ON (%) Vs Tj (oC) 8 toff delay ton delay 7 7 rise tim e 6 6 130% final rdson 5 5 4 4 3 3 2 2 1 1 0 0 0 1 2 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) 6 fall tim e 0 1 2 3 4 5 6 7 8 Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) www.irf.com IPS0151(S) 100 100 10 10 1 1 delay off fall tim e delay o n r is e t i me 1 3 0% r ds o n 0 .1 0 .1 10 10 100 1000 100 1000 10000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds (on) (us) Vs IN Resistor (Ω) Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) 50 50 45 45 40 40 35 35 30 30 25 25 20 20 Isd 25°C 15 15 10 10 Ilim 25°C 5 5 0 0 1 2 3 4 5 6 7 8 Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V) www.irf.com 0 -50 -25 0 25 50 75 100 125 150 Figure 12 - Ishutdown (A) Vs Temperature (oC) 7 IPS0151(S) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -50 100 rth = 5°C/W rth = 15°C/W SMD220 1'' footprint SMD220 std. footprint Current path capability should be above this 10 Load characteristic should be below this curve T=25°C 0 50 100 150 200 1 Figure 13 - Max.Cont. Ids (A) Vs Ambient Temperature (oC) single pulse 100 Hz rth=60°C/W dT=25°C 1kHz rth=60°C/W dT=25°C 100 T=100°C Figure 14 - Max.Cont. Ids (A) Vs Ambient Temperature (oC) 100 10 10 1 1 Figure 15 - Iclamp (A) Vs Inductive Load (mH) 1E+03 1E+02 1E+01 100 1E-01 10 1E-02 1 1E-03 0 .1 1E-04 0 .0 1 1E-05 0 .0 1 1E+00 rth junction to case = 1.8°C/W 0.1 8 rth free air TO220, s td footprint SMD220 0 .1 Vbat = 14 V Tjini = T sd 0 .0 0 1 Single pulse Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) - IPS0151/IPS051S www.irf.com IPS0151(S) 200 120% 180 115% 160 110% 140 120 105% 100 100% 80 95% 60 90% 40 Iin,on 20 Iin,off 85% 0 80% -50 -25 0 -50 -25 25 50 75 100 125 150 Figure 17 - Input current (µA) Vs Junction (oC) 16 14 Treset rise tim e 12 fall tim e Vds clam p @ Isd Vin clam p @ 10m A 0 25 50 75 100 125 150 Figure 18 - Vin clamp and V clamp2 (V) Vs Tjunction (oC) 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and Treset (µs) Vs Tjunction (oC) www.irf.com 9 IPS0151(S) Case Outline 2 NOTES: 2X 3-Lead TO-220AB 10 01-6024 00 IRGB 01-3026 01 (TO-220AB) www.irf.com IPS0151(S) Case Outline 3-Lead D2PAK www.irf.com 01-6022 00 115-0088 10 (TO-263AB) 11 IPS0151(S) Tape & Reel - D2PAK (SMD220) 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 11/13/2001 12 www.irf.com