NJ5N80 POWER MOSFET 5.0A 800V N-CHANNEL POWER MOSFET DESCRIPTION The NJ5N80 is a N-channel enhancement mode power MOSFET. It use advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-AC inverters for welding equipment and uninterruptible power supply(UPS). FEATURES * VDS = 800V * ID = 5.0A * RDS(ON): 2.0 ohm(TYP.) * Avalanche rugged technology * Low input capacitance * Low gate charge * Application oriented characterization SYMBOL ORDERING INFORMATION Ordering Number Package NJ5N80-LI NJ5N80-BL NJ5N80F-LI NJ5N80A-LI NJ5N80D-TR NJ5N80D-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F TO-251 TO-252 TO-252 D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Box Bulk Tube Tube Tape Ree Tube NJ5N80 POWER ʳ ʳʳ ʳ MOSFET ʳʳ ʳʳʳ ʳ ʳʳ ʳ ʳʳ ʳʳʳ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VGS=0 VDS 800 V Gate-Source Voltage VGS ±30 V Drain-Gate Voltage RGS=20kȍ VDGR 800 V Continuous ID 5.5 A Drain Current (Continuous) 20 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 320 mJ TO-220 125 W Power Dissipation PD 40 TO-220F TO-220 1 Derating Factor W/°C TO-220F 0.32 Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, ID=IAR, VDD=50V THERMAL DATA PARAMETER Junction to Ambient TO-220 Junction to Case TO-220F SYMBOL șJA șJC RATINGS 62.5 1 3.12 UNIT °C/W °C/W NJ5N80 POWER ʳ ʳʳ ʳ MOSFET ʳʳ ʳʳʳ ʳ ʳʳ ʳ ʳʳ ʳʳʳ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250μA, VGS=0V VDS=800V, VGS=-0V VGS=+30V VGS=-30V VDS=VGS, ID=250μA VGS=10V, ID=2.5A VGS=10V, ID=2.5A, TC=100°C VDS>ID(ON)hRDS(ON)max,VGS=10V On State Drain Current ID(ON) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=500V, ID=6A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=400V, ID=2.5A, RG=50 VGS=10V (Note 1, 2) Rise Time tR Turn-OFF Delay Time tD(OFF) VDD=640V, ID=5.5A, RG=50 VGS=10V (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=5.5A, VGS=0V Reverse Recovery Time trr ISD=5.5A,dI/dt=100A/μs, Reverse Recovery Charge QRR VDD=80V,TJ=150°C (Note 1) Reverse Recovery Current IRRM Source-Drain Current ISD Source-Drain Current (Pulsed) (Note 1) ISDM Notes: 1. Pulsed: Pulse duration=300μs, duty cycle 1.5%. 2. Essentially independent of operating temperature MIN TYP MAX UNIT 800 25 +100 -100 3 2.0 5 2.5 4 5 V μA nA nA V A 1190 1450 165 200 70 85 pF pF pF 75 9 33 50 85 120 30 nC nC nC ns ns ns ns 95 65 105 150 40 2 700 7.7 22 5.5 20 V ns nC A A A NJ5N80 POWER ʳ ʳʳ ʳ MOSFET ʳʳ ʳʳʳ ʳ ʳʳ ʳ ʳʳ ʳʳʳ TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ5N80 POWER ʳ ʳʳ ʳ MOSFET ʳʳ ʳʳʳ ʳ ʳʳ ʳ ʳʳ ʳʳʳ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms