PD - 94605 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS597260 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -32A -32A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight High Electrical Conductive Package Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -32 -20 -128 208 1.67 ±20 354 -32 25 -4.1 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (0.063in./1.6mm from case for 10s) 9.3 ( Typical ) g For footnotes refer to the last page www.irf.com 1 02/13/03 IRHMS597260 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -200 — — V — -0.25 — V/°C — — 0.103 Ω VGS = -12V, ID = -20A ➃ -2.0 23 — — — — — — -4.0 — -10 -25 V S( ) — — — — — — — — — — — — — — — — — — — 4.0 -100 100 175 75 70 35 50 75 100 — nC VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -20A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -32A VDS = -100V ns VDD = -100V, ID = -32A VGS =-12V, RG = 2.35Ω ∆BVDSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA Ω BVDSS µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 7170 920 86 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -32 -128 -5.0 300 6.0 Test Conditions A V ns µC Tj = 25°C, IS = -32A, VGS = 0V ➃ Tj = 25°C, IF =-32A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.21 — 0.6 — 48 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMS597260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage -200 Gate Threshold Voltage -2.0 Gate-to-Source Leakage Forward — Gate-to-Source Leakage Reverse — Zero Gate Voltage Drain Current — Static Drain-to-Source ➃ — On-State Resistance (TO-3) Static Drain-to-Source On-State ➃ — Resistance(Low-OhmicTO-254AA) Diode Forward Voltage ➃ — 300KRads(Si)2 Min Max Units Test Conditions — -4.0 -100 100 -10 0.103 -200 -2.0 — — — — — -5.0 -100 100 -10 0.103 nA 0.103 — 0.103 Ω VGS = -12V, ID =-20A -5.0 — -5.0 V VGS = 0V, IS = -32A V µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, I D = -1.0mA VGS =-20V VGS = 20 V VDS = -160V, VGS =0V VGS = -12V, ID =-20A 1. Part number IRHMS597260 2. Part number IRHMS593260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.3 59.9 82.3 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36.8 - 200 - 200 - 200 - 200 -75 32.7 - 200 - 200 - 200 - 50 — 28.5 - 200 - 200 - 200 - 35 — Energy (MeV) 285 345 357 -250 VDS -200 Br -150 I -100 Au -50 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMS597260 1000 VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 100 100 -5.0V 10 20µs PULSE WIDTH Tj = 25°C 1 -5.0V 10 20µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 0.1 -VDS , Drain-to-Source Voltage (V) R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current ( Α ) 2.5 T J = 25°C T J = 150°C VDS = -50V 20µs PULSE 15 WIDTH 10 5 5.5 6 6.5 7 7.5 10 100 Fig 2. Typical Output Characteristics 1000 100 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 8 -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 1000 Pre-Irradiation ID = -32A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 12000 16 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED ID= -32A 8000 -V GS, Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 10000 C, Capacitance (pF) IRHMS597260 Ciss 6000 4000 Coss 2000 VDS= -160V VDS= -100V VDS= -40V 12 8 4 Crss 0 1 10 0 100 0 -VDS, Drain-to-Source Voltage (V) 40 60 80 100 120 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 -I D , Drain-to-Source Current (A) -ISD , Reverse Drain Current ( Α ) 20 100 100 T J = 150°C 10 TJ = 25°C 1 VGS = 0V 0.1 0.5 1.5 2.5 3.5 4.5 5.5 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com OPERATION IN THIS AREA LIMITED BY R DS(on) 100µs 10 1ms 1 6.5 Tc = 25°C Tj = 150°C Single Pulse 1 10ms 10 100 1000 -V DS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHMS597260 Pre-Irradiation 35 30 -ID , Drain Current (A) RD VDS VGS D.U.T. RG 25 - + V DD VGS 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMS597260 L - D .U .T RG + IA S VGS -2 0V tp 800 VVDD DD A D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) VDS ID -14.3A -20.2A BOTTOM -32A TOP 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF .3µF -12 V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHMS597260 Pre-Irradiation Footnotes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L=0.7mH Peak IL = -32A, VGS = -12V ➂ ISD ≤ -32A, di/dt ≤ -220A/µs, VDD ≤ -200V, TJ ≤ 150°C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — Low-Omic TO-254AA 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665] 3.81 [.150] 1. 2. 3. 4. 2X 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 3X NOT ES : B 13.84 [.545] 13.59 [.535] 0.36 [.014] 3.81 [.150] B A PIN AS S IGNMENT S DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONFORMS T O JEDEC OUT LINE T O-254AA. 1 = DRAIN 2 = S OURCE 3 = GAT E CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 8 www.irf.com