MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE CM200DU-24F ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 108 93 ±0.25 14 14 E2 G2 14 C1 E2 25 25 6 62 G1 E1 RTC CIRCUIT DIAGRAM 15.85 (18) C2E1 C1 E2 C2E1 48 ±0.25 15 6 E2 G2 CM G1 E1 (8.25) RTC 21.5 2.5 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 4 18 0.5 2.8 29 +1.0 –0.5 LABEL 0.5 0.5 0.5 4 7 8.5 18 22 7 7.5 18 Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 200 400 200 400 830 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Parameter Symbol Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 5 6 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — 1.6 — 1.8 1.9 — — — 2200 — — — — — 12.2 — — — 0.04 — — 40 2.4 — 78 3.4 2.0 — 300 80 500 300 200 — 3.2 0.15 0.18 — 0.091*3 16 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Tj = 25°C Tj = 125°C IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips mA V nF nC ns ns µC V K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 300 15 11 250 10 9 200 8.5 150 100 8 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 9.5 Tj = 25°C VGE = 20V 350 0 0.5 1 1.5 2 2.5 3 3.5 4 VGE = 15V Tj = 25°C 2.5 Tj = 125°C 2 1.5 1 0.5 0 0 100 200 300 400 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 103 Tj = 25°C 4 3 IC = 400A IC = 200A 2 IC = 80A 1 0 6 8 10 12 14 16 18 2 102 7 5 3 2 1 1.5 2 2.5 3 3.5 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 SWITCHING TIMES (ns) Cies 7 5 Coes 100 7 5 3 EMITTER-COLLECTOR VOLTAGE VEC (V) 101 3 2 Tj = 25°C GATE-EMITTER VOLTAGE VGE (V) 7 5 3 2 7 5 101 0.5 20 102 CAPACITANCE Cies, Coes, Cres (nF) 3 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 400 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 7 td(off) 5 tf 3 2 102 7 5 3 2 tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) td(on) 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 103 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 3 2 102 Irr trr 7 5 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.15K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.18K/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A 18 16 VCC = 400V 14 VCC = 600V 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Feb. 2009 4