Mitsubishi CM200DU-24F Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
CM200DU-24F
¡IC ................................................................... 200A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point
108
93 ±0.25
14
14
E2 G2
14
C1
E2
25
25
6
62
G1 E1
RTC
CIRCUIT DIAGRAM
15.85
(18)
C2E1
C1
E2
C2E1
48 ±0.25
15
6
E2 G2
CM
G1 E1
(8.25)
RTC
21.5
2.5
3-M6 NUTS
4-φ6. 5 MOUNTING HOLES
4
18
0.5
2.8
29 +1.0
–0.5
LABEL
0.5
0.5
0.5
4
7
8.5
18
22
7
7.5
18
Feb. 2009
MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
1200
±20
200
400
200
400
830
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Parameter
Symbol
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 20mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
1.8
1.9
—
—
—
2200
—
—
—
—
—
12.2
—
—
—
0.04
—
—
40
2.4
—
78
3.4
2.0
—
300
80
500
300
200
—
3.2
0.15
0.18
—
0.091*3
16
µA
VCE(sat)
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal
resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
Tj = 25°C
Tj = 125°C
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 200A, VGE = 15V
VCC = 600V, IC = 200A
VGE = ±15V
RG = 1.6Ω, Inductive load
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied*2 (1/2 module)
Case temperature measured point is just under the chips
mA
V
nF
nC
ns
ns
µC
V
K/W
Ω
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
300
15
11
250
10
9
200
8.5
150
100
8
50
0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
9.5
Tj = 25°C
VGE = 20V
350
0
0.5
1
1.5
2
2.5
3
3.5
4
VGE = 15V
Tj = 25°C
2.5
Tj = 125°C
2
1.5
1
0.5
0
0
100
200
300
400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
103
Tj = 25°C
4
3
IC = 400A
IC = 200A
2
IC = 80A
1
0
6
8
10
12
14
16
18
2
102
7
5
3
2
1
1.5
2
2.5
3
3.5
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
SWITCHING TIMES (ns)
Cies
7
5
Coes
100
7
5
3
EMITTER-COLLECTOR VOLTAGE VEC (V)
101
3
2
Tj = 25°C
GATE-EMITTER VOLTAGE VGE (V)
7
5
3
2
7
5
101
0.5
20
102
CAPACITANCE Cies, Coes, Cres (nF)
3
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
COLLECTOR CURRENT IC (A)
400
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
Cres
3
2
VGE = 0V
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
7 td(off)
5
tf
3
2
102
7
5
3
2
tr
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.6Ω
Tj = 125°C
Inductive load
101
7
5
3
2
100 1
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
td(on)
2
3
5 7 102
2
3
5 7 103
COLLECTOR CURRENT IC (A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
103
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
2
102
Irr
trr
7
5
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.6Ω
Tj = 25°C
Inductive load
3
2
101 1
10
2
3
5 7 102
2
3
5 7 103
EMITTER CURRENT IE (A)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.15K/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.18K/W
100
7
5
3
2
3
2
10–1
10–1
10–2
10–2
7
5
3
2
7
5
3
2
10–3
7
5
3
2
7
5
3
2
Single Pulse
TC = 25°C
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 200A
18
16
VCC = 400V
14
VCC = 600V
12
10
8
6
4
2
0
0
500
1000 1500 2000 2500 3000
GATE CHARGE QG (nC)
Feb. 2009
4
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