SIRECT BAV16BPT Fast switching diode array - 150mamp 75volt Datasheet

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BAV16BPT
Fast Switching Diode Array – 150mAmp 75Volt
□ Features
-For surface mounted applications
-Low profile package
-Built-in strain relief
-Metal silicon junction, majority carrier conduction
-Low power loss, high efficiency
-High current capability, low forward voltage drop
-For use in low voltage high frequency inverters, free wheeling and polarity
protection application
-High temperature soldering guaranteed
-High reliability
-High surge current capability
-Lead free device
-ESD sensitive product handling required
SOD-123
.028(0.70)
.018(0.45)
.071(1.80)
.055(1.40)
.112(2.85)
.100(2.55)
.008(0.2)
.053(1.35)
.035(0.90)
□ Mechanical data
-Case:Molded plastic
-Polarity:Color band denotes cathode end
.020(0.50)
.004(0.12)
.153(3.90)
.140(3.55)
□ Maximum ratings and Electrical characteristics
TYPE
SYMBOL
BAV16BPT
UNIT
Maximum Non-Repetitive Peak Reverse Voltage
VRM
100
V
Maximum RMS Voltage
VRMS
53
V
Maximum Repetitive Peak Reverse and DC Blocking Voltage
VRRM ,VDC
75
V
Maximum Average Forward Rectified Current
IO
150
mA
IFSM
2.0
1.0
A
V
Non-Repetitive Peak Forward urge Current
@ t = 1.0uSec
@t = 1.0Sec
Maximum Instantaneous Forward Voltage
@ IF = 1.0mA
@ IF = 10mA
@ IF = 50mA
@ IF = 150mA
VF
0.715
0.855
1.00
1.25
Maximum Average Reverse Current
@TJ = 25ºC
@TJ = 150ºC
IR
1.0
50
μA
Typical Junction Capacitance (Note 1)
CJ
2.0
pF
Maximum Reverse Recovery Time (Note 2)
TRR
4.0
nSec
Thermal Resistance Junction to Ambient (Note 3)
RθJA
625
ºC/W
Maximum Storage and Operating Temperature Range
TJ , TSTG
-65 - 150
ºC
Note: .1.Measured at 1.0 MHz and applied reverse voltage of 0 volts
August 2007 / Rev.5
2.Measured at applied forward current of 10mA and reverse current of 10mA
3.Device mounted on FR-4 by 1 inch x 0.85 inch x 0.062 inch
http:// www.sirectsemi.com
1
BAV16BPT
1
100u
Ta = 100℃
REVERSE CURRENT , (A)
FORWARD CURRENT , (A)
10u
100m
Ta = 85℃
50℃
25℃
10m
0℃
-30℃
1m
75℃
1u
50℃
100n
25℃
10n
0℃
-25℃
1n
0.1n
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
10
20
FORWARD VOLTAGE , (V)
Figure 1. Forward Characteristics
50
60
70
80
125
AVERAGE FORWARD CURRENT , (%)
JUNCTION CAPACITANCE , (pF)
40
Figure 2. Reverse Characteristics
10
2
f = 1MHz
0
0
2
4
6
8
10
12
14
16
100
75
50
25
0
0
REVERSE VOLTAGE , (V)
25
50
75
100
125
150
AMBIENT TEMPERATURE ,℃
Figure 3. Typical Junction Capacitance
REVERSE RECOVERY TIME , (nS)
30
REVERSE VOLTAGE , (V)
Figure 4. Forward Current Derating Curve
8
6
4
2
VR = 6V
0
0
2
4
6
8
10
FORWARD CURRENT , (mA)
Figure 5. Reverse Recovery Time
Sirectifier Global Corp., Delaware, U.S.A.
U.S.A.: [email protected]
France: [email protected]
Taiwan: [email protected]
Hong Kong: [email protected]
China: [email protected] …Thailand: [email protected]
Philippines: [email protected] Belize: [email protected]
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