E L E C T R O N I C BAV16BPT Fast Switching Diode Array – 150mAmp 75Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current capability -Lead free device -ESD sensitive product handling required SOD-123 .028(0.70) .018(0.45) .071(1.80) .055(1.40) .112(2.85) .100(2.55) .008(0.2) .053(1.35) .035(0.90) □ Mechanical data -Case：Molded plastic -Polarity：Color band denotes cathode end .020(0.50) .004(0.12) .153(3.90) .140(3.55) □ Maximum ratings and Electrical characteristics TYPE SYMBOL BAV16BPT UNIT Maximum Non-Repetitive Peak Reverse Voltage VRM 100 V Maximum RMS Voltage VRMS 53 V Maximum Repetitive Peak Reverse and DC Blocking Voltage VRRM ,VDC 75 V Maximum Average Forward Rectified Current IO 150 mA IFSM 2.0 1.0 A V Non-Repetitive Peak Forward urge Current @ t = 1.0uSec @t = 1.0Sec Maximum Instantaneous Forward Voltage @ IF = 1.0mA @ IF = 10mA @ IF = 50mA @ IF = 150mA VF 0.715 0.855 1.00 1.25 Maximum Average Reverse Current @TJ = 25ºC @TJ = 150ºC IR 1.0 50 μA Typical Junction Capacitance (Note 1) CJ 2.0 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec Thermal Resistance Junction to Ambient (Note 3) RθJA 625 ºC/W Maximum Storage and Operating Temperature Range TJ , TSTG -65 - 150 ºC Note: .1.Measured at 1.0 MHz and applied reverse voltage of 0 volts August 2007 / Rev.5 2.Measured at applied forward current of 10mA and reverse current of 10mA 3.Device mounted on FR-4 by 1 inch x 0.85 inch x 0.062 inch http:// www.sirectsemi.com 1 BAV16BPT 1 100u Ta = 100℃ REVERSE CURRENT , (A) FORWARD CURRENT , (A) 10u 100m Ta = 85℃ 50℃ 25℃ 10m 0℃ -30℃ 1m 75℃ 1u 50℃ 100n 25℃ 10n 0℃ -25℃ 1n 0.1n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 10 20 FORWARD VOLTAGE , (V) Figure 1. Forward Characteristics 50 60 70 80 125 AVERAGE FORWARD CURRENT , (%) JUNCTION CAPACITANCE , (pF) 40 Figure 2. Reverse Characteristics 10 2 f = 1MHz 0 0 2 4 6 8 10 12 14 16 100 75 50 25 0 0 REVERSE VOLTAGE , (V) 25 50 75 100 125 150 AMBIENT TEMPERATURE ,℃ Figure 3. Typical Junction Capacitance REVERSE RECOVERY TIME , (nS) 30 REVERSE VOLTAGE , (V) Figure 4. Forward Current Derating Curve 8 6 4 2 VR = 6V 0 0 2 4 6 8 10 FORWARD CURRENT , (mA) Figure 5. Reverse Recovery Time Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com 2