MCNIX MX29LV800CTMI-70 8m-bit [1mx8/512k x16] cmos single voltage 3v only flash memory Datasheet

MX29LV800C T/B
FEATURES
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotected allows code changes
in previously locked sectors.
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP (6 x 8mm)
- 48-ball CSP (4 x 6mm)
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 10 years data retention
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 45R/55R/70/90ns
• Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Fully compatible with MX29LV800BT/BB device
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion
GENERAL DESCRIPTION
The MX29LV800C T/B is a 8-mega bit Flash memory
organized as 1M bytes of 8 bits or 512K words of 16
bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access
memory. The MX29LV800C T/B is packaged in 44-pin
SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cycling. The MX29LV800C T/B uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The standard MX29LV800C T/B offers access time as
fast as 45ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV800C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV800C T/B uses a command register to manage
this functionality. The command register allows for 100%
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MX29LV800C T/B
PIN CONFIGURATIONS
PIN DESCRIPTION
44 SOP(500 mil)
SYMBOL PIN NAME
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
MX29LV800CT/CB
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
GND
OE#
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
A0~A18
Address Input
Q0~Q14
Data Input/Output
Q15/A-1
Q15(Word mode)/LSB addr(Byte mode)
CE#
Chip Enable Input
WE#
Write Enable Input
BYTE#
Word/Byte Selection input
RESET#
Hardware Reset Pin
OE#
Output Enable Input
RY/BY#
Ready/Busy Output
VCC
Power Supply Pin (2.7V~3.6V)
GND
Ground Pin
NC
Pin Not Connected Internally
48 TSOP (Standard Type) (12mm x 20mm)
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
MX29LV800CT/CB
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48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OE#
GND
CE#
A0
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MX29LV800C T/B
48-Ball CSP (Ball Pitch = 0.8 mm, Top View, Balls Facing Down, 6 x 8 mm)
6
A13
A12
A14
A15
A16
5
A9
A8
A10
A11
Q7
4
WE#
RESET#
NC
NC
Q5
BYTE#
Q15/
A-1
GND
Q14
Q13
Q6
Q12
VCC
Q4
3
RY/
BY#
NC
A18
NC
Q2
Q10
Q11
Q3
2
A7
A17
A6
A5
Q0
Q8
Q9
Q1
1
A3
A4
A2
A1
A0
CE#
OE#
GND
A
B
C
D
E
F
G
H
48-Ball CSP (Balls Facing Down, 4 x 6 mm)
6
A2
A4
A6
A17
5
A1
A3
A7
NC
4
A0
A5
3
CE#
2
GND
1
A
NC
NC
WE#
NC
NC
A9
A11
A10
A13
A14
A18
A8
A12
A15
Q8
Q10
Q4
Q11
A16
OE#
Q9
NC
Q5
Q6
Q7
Q0
Q1
Q2
Q3
VCC
Q12
Q13
Q14
Q15
GND
B
C
D
E
F
G
H
J
NC
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MX29LV800C T/B
BLOCK STRUCTURE
TABLE 1: MX29LV800CT SECTOR ARCHITECTURE
Sector
Sector Size
Byte Mode Word Mode
Address range
Byte Mode (x8)
Word Mode (x16)
Sector Address
A18 A17 A16 A15 A14 A13 A12
SA0
64Kbytes
32Kwords
00000h-0FFFFh
00000h-07FFFh
0
0
0
0
X
X
X
SA1
64Kbytes
32Kwords
10000h-1FFFFh
08000h-0FFFFh
0
0
0
1
X
X
X
SA2
64Kbytes
32Kwords
20000h-2FFFFh
10000h-17FFFh
0
0
1
0
X
X
X
SA3
64Kbytes
32Kwords
30000h-3FFFFh
18000h-1FFFFh
0
0
1
1
X
X
X
SA4
64Kbytes
32Kwords
40000h-4FFFFh
20000h-27FFFh
0
1
0
0
X
X
X
SA5
64Kbytes
32Kwords
50000h-5FFFFh
28000h-2FFFFh
0
1
0
1
X
X
X
SA6
64Kbytes
32Kwords
60000h-6FFFFh
30000h-37FFFh
0
1
1
0
X
X
X
SA7
64Kbytes
32Kwords
70000h-7FFFFh
38000h-3FFFFh
0
1
1
1
X
X
X
SA8
64Kbytes
32Kwords
80000h-8FFFFh
40000h-47FFFh
1
0
0
0
X
X
X
SA9
64Kbytes
32Kwords
90000h-9FFFFh
48000h-4FFFFh
1
0
0
1
X
X
X
SA10
64Kbytes
32Kwords
A0000h-AFFFFh
50000h-57FFFh
1
0
1
0
X
X
X
SA11
64Kbytes
32Kwords
B0000h-BFFFFh
58000h-5FFFFh
1
0
1
1
X
X
X
SA12
64Kbytes
32Kwords
C0000h-CFFFFh
60000h-67FFFh
1
1
0
0
X
X
X
SA13
64Kbytes
32Kwords
D0000h-DFFFFh
68000h-6FFFFh
1
1
0
1
X
X
X
SA14
64Kbytes
32Kwords
E0000h-EFFFFh
70000h-77FFFh
1
1
1
0
X
X
X
SA15
32Kbytes
16Kwords
F0000h-F7FFFh
78000h-7BFFFh
1
1
1
1
0
X
X
SA16
8Kbytes
4Kwords
F8000h-F9FFFh
7C000h-7CFFFh
1
1
1
1
1
0
0
SA17
8Kbytes
4Kwords
FA000h-FBFFFh
7D000h-7DFFFh
1
1
1
1
1
0
1
SA18
16Kbytes
8Kwords
FC000h-FFFFFh
7E000h-7FFFFh
1
1
1
1
1
1
X
Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.
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MX29LV800C T/B
TABLE 2: MX29LV800CB SECTOR ARCHITECTURE
Sector
Sector Size
Byte Mode Word Mode
Address range
Byte Mode (x8)
Word Mode (x16)
Sector Address
A18 A17 A16 A15 A14 A13 A12
SA0
16Kbytes
8Kwords
00000h-03FFFh
00000h-01FFFh
0
0
0
0
0
0
X
SA1
8Kbytes
4Kwords
04000h-05FFFh
02000h-02FFFh
0
0
0
0
0
1
0
SA2
8Kbytes
4Kwords
06000h-07FFFh
03000h-03FFFh
0
0
0
0
0
1
1
SA3
32Kbytes
16Kwords
08000h-0FFFFh
04000h-07FFFh
0
0
0
0
1
X
X
SA4
64Kbytes
32Kwords
10000h-1FFFFh
08000h-0FFFFh
0
0
0
1
X
X
X
SA5
64Kbytes
32Kwords
20000h-2FFFFh
10000h-17FFFh
0
0
1
0
X
X
X
SA6
64Kbytes
32Kwords
30000h-3FFFFh
18000h-1FFFFh
0
0
1
1
X
X
X
SA7
64Kbytes
32Kwords
40000h-4FFFFh
20000h-27FFFh
0
1
0
0
X
X
X
SA8
64Kbytes
32Kwords
50000h-5FFFFh
28000h-2FFFFh
0
1
0
1
X
X
X
SA9
64Kbytes
32Kwords
60000h-6FFFFh
30000h-37FFFh
0
1
1
0
X
X
X
SA10
64Kbytes
32Kwords
70000h-7FFFFh
38000h-3FFFFh
0
1
1
1
X
X
X
SA11
64Kbytes
32Kwords
80000h-8FFFFh
40000h-47FFFh
1
0
0
0
X
X
X
SA12
64Kbytes
32Kwords
90000h-9FFFFh
48000h-4FFFFh
1
0
0
1
X
X
X
SA13
64Kbytes
32Kwords
A0000h-AFFFFh
50000h-57FFFh
1
0
1
0
X
X
X
SA14
64Kbytes
32Kwords
B0000h-BFFFFh
58000h-5FFFFh
1
0
1
1
X
X
X
SA15
64Kbytes
32Kwords
C0000h-CFFFFh
60000h-67FFFh
1
1
0
0
X
X
X
SA16
64Kbytes
32Kwords
D0000h-DFFFFh
68000h-6FFFFh
1
1
0
1
X
X
X
SA17
64Kbytes
32Kwords
E0000h-EFFFFh
70000h-77FFFh
1
1
1
0
X
X
X
SA18
64Kbytes
32Kwords
F0000h-FFFFFh
78000h-7FFFFh
1
1
1
1
X
X
X
Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.
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MX29LV800C T/B
BLOCK DIAGRAM
CE#
OE#
WE#
RESET#
CONTROL
INPUT
HIGH VOLTAGE
LOGIC
LATCH
BUFFER
Y-DECODER
AND
WRITE
STATE
MACHINE
(WSM)
STATE
X-DECODER
ADDRESS
A0-A18
PROGRAM/ERASE
REGISTER
FLASH
ARRAY
Y-PASS GATE
SENSE
AMPLIFIER
PGM
DATA
HV
ARRAY
SOURCE
HV
COMMAND
DATA
DECODER
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q15/A-1
I/O BUFFER
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MX29LV800C T/B
AUTOMATIC PROGRAMMING
dard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number of
sequences. A status bit toggling between consecutive
read cycles provides feedback to the user as to the status of the erasing operation.
The MX29LV800C T/B is byte programmable using the
Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29LV800C T/B is less than 10
seconds.
Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# or CE#, whichever
happens first.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program verification, and counts the number of sequences.
A status bit similar to DATA# polling and a status bit
toggling between consecutive read cycles, provide feedback to the user as to the status of the programming
operation. Refer to write operation status, table 8, for more
information on these status bits.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV800C T/B
electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register to respond to its full command set.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 25 second. The Automatic Erase algorithm
automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SELECT
AUTOMATIC SECTOR ERASE
AUTOMATIC ERASE ALGORITHM
The auto select mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on Q7~Q0. This mode is mainly
adapted for programming equipment on the device to be
programmed with its programming algorithm. When programming by high voltage method, automatic select mode
requires VID (11.5V to 12.5V) on address pin A9 and
other address pin A6, A1 and A0 as referring to Table 3.
In addition, to access the automatic select codes in-system, the host can issue the automatic select command
through the command register without requiring VID, as
shown in table 5.
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
To verify whether or not sector being protected, the sector address must appear on the appropriate highest order
The MX29LV800C T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.
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MX29LV800C T/B
address bit (see Table 1 and Table 2). The rest of address
bits, as shown in table 3, are don't care. Once all necessary bits have been set as required, the programming
equipment may read the corresponding identifier code on
Q7~Q0.
TABLE 3. MX29LV800C T/B AUTO SELECT MODE OPERATION
A18 A11
Description
Mode CE# OE# WE#
|
A9
|
A12 A10
Manufacturer Code
Read
A8
A6
A5 A1 A0
|
|
A7
A2
Q15~Q0
L
L
H
X
X
VID
X
L
X
L
L
C2H
Device ID
Word
L
L
H
X
X
VID
X
L
X
L
H
22DAH
Silicon (Top Boot Block)
Byte
L
L
H
X
X
VID
X
L
X
L
H
XXDAH
ID
Device ID
Word
L
L
H
X
X
VID
X
L
X
L
H
225BH
(Bottom Boot Block)
Byte
L
L
H
X
X
VID
X
L
X
L
H
XX5BH
XX01H
Sector Protection
L
L
H
SA
X
VID
Verification
X
L
X
H
L
(protected)
XX00H
(unprotected)
NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High
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MX29LV800C T/B
The single cycle Query command is valid only when the
device is in the Read mode, including Erase Suspend,
Standby mode, and Read ID mode; however, it is ignored
otherwise.
QUERY COMMAND AND COMMON FLASH
INTERFACE (CFI) MODE
MX29LV800C T/B is capable of operating in the CFI mode.
This mode all the host system to determine the manufacturer of the device such as operating parameters and
configuration. Two commands are required in CFI mode.
Query command of CFI mode is placed first, then the
Reset command exits CFI mode. These are described in
Table 4.
The Reset command exits from the CFI mode to the
Read mode, or Erase Suspend mode, or read ID mode.
The command is valid only when the device is in the CFI
mode.
TABLE 4-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal)
Description
Address
(Byte Mode)
Query-unique ASCII string "QRY"
20
22
24
Primary vendor command set and control interface ID code
26
28
Address for primary algorithm extended query table
2A
2C
Alternate vendor command set and control interface ID code (none)
2E
30
Address for secondary algorithm extended query table (none)
32
34
Address
(Word Mode)
10
11
12
13
14
15
16
17
18
19
1A
Data
0051
0052
0059
0002
0000
0040
0000
0000
0000
0000
0000
TABLE 4-2. CFI Mode: System Interface Data Values
(All values in these tables are in hexadecimal)
Description
VCC supply, minimum (2.7V)
VCC supply, maximum (3.6V)
VPP supply, minimum (none)
VPP supply, maximum (none)
Typical timeout for single word/byte write (2N us)
Typical timeout for Minimum size buffer write (2N us)
Typical timeout for individual block erase (2N ms)
Typical timeout for full chip erase (2N ms)
Maximum timeout for single word/byte write times (2N X Typ)
Maximum timeout for buffer write times (2N X Typ)
Maximum timeout for individual block erase times (2N X Typ)
Maximum timeout for full chip erase times (not supported)
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Address
(Byte Mode)
36
38
3A
3C
3E
40
42
44
46
48
4A
4C
Address
(Word Mode)
1B
1C
1D
1E
1F
20
21
22
23
24
25
26
Data
0027
0036
0000
0000
0004
0000
000A
0000
0005
0000
0004
0000
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MX29LV800C T/B
TABLE 4-3. CFI Mode: Device Geometry Data Values
(All values in these tables are in hexadecimal)
Description
Device size (2N bytes)
Flash device interface code (refer to the CFI publication 100)
Maximum number of bytes in multi-byte write (not supported)
Number of erase block regions
Erase block region 1 information (refer to the CFI publication 100)
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
Address
(Byte Mode)
4E
50
52
54
56
58
5A
5C
5E
60
62
64
66
68
6A
6C
6E
70
72
74
76
78
Address
(Word Mode)
27
28
29
2A
2B
2C
2D
2E
2F
30
31
32
33
34
35
36
37
38
39
3A
3B
3C
Data
0014
0002
0000
0000
0000
0004
0000
0000
0040
0000
0001
0000
0020
0000
0000
0000
0080
0000
000E
0000
0000
0001
TABLE 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values
(All values in these tables are in hexadecimal)
Description
Query-unique ASCII string "PRI"
Major version number, ASCII
Minor version number, ASCII
Address sensitive unlock (0=required, 1= not required)
Erase suspend (2= to read and write)
Sector protect (N= # of sectors/group)
Temporary sector unprotected (1=supported)
Sector protect/unprotected scheme
Simultaneous R/W operation (0=not supported)
Burst mode type (0=not supported)
Page mode type (0=not supported)
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Address
(Byte Mode)
80
82
84
86
88
8A
8C
8E
90
92
94
96
98
Address
(Word Mode)
40
41
42
43
44
45
46
47
48
49
4A
4B
4C
Data
0050
0052
0049
0031
0030
0000
0002
0001
0001
0004
0000
0000
0000
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MX29LV800C T/B
TABLE 5. MX29LV800C T/B COMMAND DEFINITIONS
Command
Bus
First Bus
Cycle
Cycle Addr
Second Bus
Cycle
Data Addr
Third Bus
Cycle
Fourth Bus
Cycle
Data Addr
Data Addr
Data
Reset
1
XXXH F0H
Read
1
RA
Word
4
555H AAH 2AAH
55H
555H
90H ADI
DDI
Byte
4
AAAH AAH 555H
55H
AAAH
90H ADI
DDI
Word
4
555H AAH 2AAH
55H
555H
90H (SA)
XX00H
Read Silicon ID
Sector Protect
x02H
4
AAAH AAH 555H
55H
AAAH
90H (SA)
x04H
Program
Addr
Sixth Bus
Cycle
Data Addr Data
RD
Verify
Byte
Fifth Bus
Cycle
XX01H
00H
01H
Word
4
555H AAH 2AAH
55H
555H
A0H PA
PD
Byte
4
AAAH AAH 555H
55H
AAAH
A0H PA
PD
Word
6
555H AAH 2AAH
55H
555H
80H 555H AAH
2AAH 55H
555H 10H
Byte
6
AAAH AAH 555H
55H
AAAH
80H AAAH AAH
555H 55H
AAAH 10H
Word
6
555H AAH 2AAH
55H
555H
80H 555H AAH
2AAH 55H
SA
30H
Byte
6
AAAH AAH 555H
55H
AAAH
80H AAAH AAH
555H 55H
SA
30H
Sector Erase Suspend
1
XXXH B0H
Sector Erase Resume
1
XXXH 30H
CFI Query
Word
1
55H
98
Byte
1
AAH
98
Chip Erase
Sector Erase
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, 22DA/DA(Top), and 225B/5B(Bottom) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector.
3. The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or
555H to Address A10~A-1 in byte mode.
Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA).
Write Sequence may be initiated with A11~A18 in either state.
4. For Sector Protect Verify operation: If read out data is 01H, it means the sector has been protected. If read out data is 00H,
it means the sector is still not being protected.
5. Any number of CFI data read cycle are permitted.
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MX29LV800C T/B
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 5 defines the valid register command
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.
TABLE 6. MX29LV800C T/B BUS OPERATION
ADDRESS
DESCRIPTION
CE# OE# WE# RESET# A18 A10 A9
A12 A11
Read
L
L
H
A8
A6 A5 A1 A0
A7
H
Q8~Q15
Q0~Q7
A2
AIN
Dout
BYTE
BYTE
=VIH
=VIL
Dout
Q8~Q14
=High Z
Q15=A-1
Write
L
H
L
H
AIN
DIN(3)
DIN
Reset
X
X
X
L
X
High Z
High Z
High Z
Temporary sector unlock
X
X
X
VID
AIN
DIN
DIN
High Z
Output Disable
L
H
H
H
X
High Z
High Z
High Z
Vcc±
X
X
Vcc±
X
High Z
High Z
High Z
Standby
0.3V
0.3V
Sector Protect
L
H
L
VID
SA
X
X
X
L
X
H
L
DIN
X
X
Chip Unprotected
L
H
L
VID
X
X
X
X
H
X
H
L
DIN
X
X
Sector Protection Verify
L
L
H
H
SA
X
VID
X
L
X
H
L
CODE(5)
X
X
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 5.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 5 for valid Data-In during a write operation.
4. X can be VIL or VIH.
5. Code=00H/XX00H means unprotected.
Code=01H/XX01H means protected.
6. A18~A12=Sector address for sector protect.
7. The sector protect and chip unprotected functions may also be implemented via programming equipment.
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MX29LV800C T/B
REQUIREMENTS FOR READING ARRAY DATA
STANDBY MODE
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should remain at VIH.
When using both pins of CE# and RESET#, the device
enter CMOS Standby with both pins held at Vcc ± 0.3V.
If CE# and RESET# are held at VIH, but not within the
range of VCC ± 0.3V, the device will still be in the standby
mode, but the standby current will be larger. During Auto
Algorithm operation, Vcc active current (Icc2) is required
even CE# = "H" until the operation is completed. The
device can be read with standard access time (tCE) from
either of these standby modes, before it is ready to read
data.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device data outputs. The device remains enabled for read
access until the command register contents are altered.
OUTPUT DISABLE
With the OE# input at a logic high level (VIH), output
from the devices are disabled. This will cause the output
pins to be in a high impedance state.
WRITE COMMANDS/COMMAND SEQUENCES
To program data to the device or erase sectors of memory
, the system must drive WE# and CE# to VIL, and OE#
to VIH.
RESET# OPERATION
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET#
pin is driven low for at least a period of tRP, the device
immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device
also resets the internal state machine to reading array
data. The operation that was interrupted should be
reinitiated once the device is ready to accept another
command sequence, to ensure data integrity
An erase operation can erase one sector, multiple sectors , or the entire device. Table indicates the address
space that each sector occupies. A "sector address"
consists of the address bits required to uniquely select a
sector. The "Writing specific address and data commands
or sequences into the command register initiates device
operations. Table 1 defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data. Section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.
Current is reduced for the duration of the RESET# pulse.
When RESET# is held at VSS±0.3V, the device draws
CMOS standby current (ICC4). If RESET# is held at VIL
but not within VSS±0.3V, the standby current will be
greater.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on
Q7-Q0. Standard read cycle timings apply in this mode.
Refer to the Autoselect Mode and Autoselect Command
Sequence section for more information.
The RESET# pin may be tied to system reset circuitry.
A system reset would that also reset the Flash memory,
enabling the system to read the boot-up firmware from
the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of
tREADY (during Embedded Algorithms). The system can
thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a pro-
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC
Characteristics" section contains timing specification
table and timing diagrams for write operations.
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MX29LV800C T/B
The Automatic Chip Erase does not require the device to
be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. The erase
and verify operations are completed when the data on Q7
is "1" at which time the device returns to the Read mode.
The system is not required to provide any control or timing during these operations.
gram or erase operation is completed within a time of
tREADY (not during Embedded Algorithms). The system
can read data tRH after the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 22 for the timing diagram.
READ/RESET COMMAND
The read or reset operation is initiated by writing the read/
reset command sequence into the command register.
Microprocessor read cycles retrieve array data. The device remains enabled for reads until the command register contents are altered.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required).
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid command must then be written to place the device in the
desired state.
If the Erase operation was unsuccessful, the data on Q5
is "1" (see Table 8), indicating the erase operation exceed internal timing limit.
The automatic erase begins on the rising edge of the last
WE# or CE# pulse, whichever happens first in the command sequence and terminates when the data on Q7 is
"1" at which time the device returns to the Read mode,
or the data on Q6 stops toggling for two consecutive read
cycles at which time the device returns to the Read mode.
SILICON-ID READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the
device resides in the target system. PROM programmers typically access signature codes by raising A9 to
a high voltage (VID). However, multiplexing high voltage
onto address lines is not generally desired system design practice.
The MX29LV800C T/B contains a Silicon-ID-Read operation to supple traditional PROM programming methodology. The operation is initiated by writing the read
silicon ID command sequence into the command register. Following the command write, a read cycle with
A1=VIL, A0=VIL retrieves the manufacturer code of C2H/
00C2H. A read cycle with A1=VIL, A0=VIH returns the
device code of DAH/22DAH for MX29LV800CT, 5BH/
225BH for MX29LV800CB.
SET-UP AUTOMATIC CHIP/SECTOR ERASE COMMANDS
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles
are then followed by the chip erase command 10H or
sector erase command 30H.
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MX29LV800C T/B
TABLE 7. SILICON ID CODE
Pins
Manufacture code
Device code
for MX29LV800CT
Device code
for MX29LV800CB
Sector Protection
Verification
Word
Byte
Word
Byte
Word
Byte
Word
Byte
A0
VIL
VIL
VIH
VIH
VIH
VIH
X
X
A1
VIL
VIL
VIL
VIL
VIL
VIL
VIH
VIH
Q15~Q8
00H
X
22H
X
22H
X
X
X
Q7
1
1
1
1
0
0
0
0
Q6
1
1
1
1
1
1
0
0
Q5
0
0
0
0
0
0
0
0
Q4
0
0
1
1
1
1
0
0
Q3
0
0
1
1
1
1
0
0
Q2
0
0
0
0
0
0
0
0
Q1
1
1
1
1
1
1
0
0
Q0
0
0
0
0
1
1
1
0
Code (Hex)
00C2H
C2H
22DAH
DAH
225BH
5BH
01H (Protected)
00H (Unprotected)
READING ARRAY DATA
RESET COMMAND
The device is automatically set to reading array data
after device power-up. No commands are required to retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
Writing the reset command to the device resets the device to reading array data. Address bits are don't care for
this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See "Erase Suspend/Erase
Resume Commands" for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the device to reading
array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the
device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an SILICON ID READ command sequence. Once in the SILICON ID READ mode, the reset
command must be written to return to reading array data
(also applies to SILICON ID READ during Erase Suspend).
If Q5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend).
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MX29LV800C T/B
SECTOR ERASE COMMANDS
Erase operation. When the Erase Suspend Command is
issued during the sector erase operation, the device requires a maximum 20us to suspend the sector erase
operation. However, when the Erase Suspend command
is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends
the erase operation. After this command has been executed, the command register will initiate erase suspend
mode. The state machine will return to read mode automatically after suspend is ready. At this time, state machine only allows the command register to respond to
Erase Resume, program data to , or read data from any
sector not selected for erasure.
The Automatic Sector Erase does not require the device
to be entirely pre-programmed prior to executing the Automatic Sector Erase Set-up command and Automatic
Sector Erase command. Upon executing the Automatic
Sector Erase command, the device will automatically program and verify the sector(s) memory for an all-zero data
pattern. The system is not required to provide any control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when either the data on Q7 is "1" at which time the device returns to the Read mode, or the data on Q6 stops
toggling for two consecutive read cycles at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend program operation is complete, the system can once again
read array data within non-suspended sectors.
When using the Automatic sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE#
or CE#, whichever happens later, while the command
(data) is latched on the rising edge of WE# or CE#,
whichever happens first. Sector addresses selected are
loaded into internal register on the sixth falling edge of
WE# or CE#, whichever happens later. Each successive sector load cycle started by the falling edge of WE#
or CE#, whichever happens later must begin within 50us
from the rising edge of the preceding WE# or CE#, whichever happens first. Otherwise, the loading period ends
and internal auto sector erase cycle starts. (Monitor Q3
to determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase (30H) or Erase Suspend (B0H) during
the time-out period resets the device to read mode.
ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing. The minimum time from Erase Resume to next Erase Suspend
is 400us. Repeatedly suspending the device more often
may have undetermined effects.
WORD/BYTE PROGRAM COMMAND SEQUENCE
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device
automatically generates the program pulses and verifies
the programmed cell margin. Table 1 shows the address
and data requirements for the byte program command
sequence.
ERASE SUSPEND
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses
are no longer latched. The system can determine the
status of the program operation by using Q7, Q6, or RY/
This command only has meaning while the state machine is executing Automatic Sector Erase operation, and
therefore will only be responded during Automatic Sector
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MX29LV800C T/B
BY#. See "Write Operation Status" for information on these
status bits.
is complete, or if the device enters the Erase Suspend
mode, DATA# polling produces a "1" on Q7. This is analogous to the complement/true datum out-put described
for the Automatic Program algorithm: the erase function
changes all the bits in a sector to "1" prior to this, the
device outputs the "complement," or "0". The system
must provide an address within any of the sectors selected for erasure to read valid status information on Q7.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operation. The Byte Program command sequence should
be reinitiated once the device has reset to reading array
data, to ensure data integrity.
After an erase command sequence is written, if all sectors selected for erasing are protected, DATA# polling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" , or cause the DATA# polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchronously with Q0-Q6 while Output Enable
(OE#) is asserted low.
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/
BY#. Table 10 and the following subsections describe
the functions of these bits. Q7, RY/BY#, and Q6 each
offer a method for determining whether a program or erase
operation is complete or in progress. These three bits are
discussed first.
RY/BY# : Ready/Busy
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algorithm
is in progress or complete. The RY/BY# status is valid
after the rising edge of the final WE# or CE#, whichever
happens first, in the command sequence. Since RY/BY#
is an open-drain output, several RY/BY# pins can be tied
together in parallel with a pull-up resistor to VCC.
Q7: Data# Polling
The DATA# polling bit, Q7, indicates to the host system
whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. DATA#
polling is valid after the rising edge of the final WE# pulse
in the program or erase command sequence.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device
is ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.
During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed to
Q7. This Q7 status also applies to programming during
Erase Suspend. When the Automatic Program algorithm
is complete, the device outputs the datum programmed
to Q7. The system must provide the program address to
read valid status information on Q7. If a program address
falls within a protected sector, DATA# polling on Q7 is
active for approximately 1 us, then the device returns to
reading array data.
Table 8 shows the outputs for RY/BY# during write operation.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE# or CE#, whichever
During the Automatic Erase algorithm, DATA# polling produces a "0" on Q7. When the Automatic Erase algorithm
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MX29LV800C T/B
happens first, in the command sequence (prior to the
program or erase operation), and during the sector timeout.
is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus, both status bits
are required for sectors and mode information. Refer to
Table 8 to compare outputs for Q2 and Q6.
During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6
to toggle. The system may use either OE# or CE# to
control the read cycles. When the operation is complete,
Q6 stops toggling.
Reading Toggle Bits Q6/ Q2
After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on Q7-Q0 on the following read cycle.
The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the
Automatic Erase algorithm is in progress), Q6 toggling.
When the device enters the Erase Suspend mode, Q6
stops toggling. However, the system must also use Q2
to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfully completed the program or erase operation. If it is still toggling, the device did not complete the
operation successfully, and the system must write the
reset command to return to reading array data.
If a program address falls within a protected sector, Q6
toggles for approximately 2 us after the program command sequence is written, then returns to reading array
data.
Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algorithm
is complete.
The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively,
it may choose to perform other system tasks. In this
case, the system must start at the beginning of the algorithm when it returns to determine the status of the
operation.
Table 8 shows the outputs for Toggle Bit I on Q6.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively erasing (that is,
the Automatic Erase algorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE# or CE#, whichever
happens first, in the command sequence.
Q5
Exceeded Timing Limits
Q5 will indicate if the program or erase time has exceeded
the specified limits (internal pulse count). Under these
conditions Q5 will produce a "1". This time-out condition
indicates that the program or erase cycle was not successfully completed. Data# Polling and Toggle Bit are
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE# or CE# to control the read
cycles.) But Q2 cannot distinguish whether the sector
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MX29LV800C T/B
the only operating functions of the device under this condition.
operation, it specifies that the entire chip is bad or combination of sectors are bad.
If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector may not be reused, (other sectors are still functional and can be reused).
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please note
that this is not a device failure condition since the device
was incorrectly used.
If this time-out condition occurs during the chip erase
TABLE 8. WRITE OPERATION STATUS
Status
Q7
(Note1)
Q6
Q7#
Toggle
0
N/A
No
Toggle
0
0
Toggle
0
1
Toggle
0
1
No
Toggle
0
N/A Toggle
1
Erase Suspend Read
(Non-Erase Suspended Sector)
Data
Data
Erase Suspend Program
Q7#
Toggle
0
N/A
N/A
0
Q7#
Toggle
1
N/A
No
Toggle
0
0
Toggle
1
1
Toggle
0
Q7#
Toggle
1
N/A
N/A
0
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Erase Suspend Read
(Erase Suspended Sector)
Q5
Q3
(Note2)
Q2 RY/BY#
In Progress
Erase Suspended Mode
Byte Program in Auto Program Algorithm
Exceeded
Time Limits
Auto Erase Algorithm
Erase Suspend Program
Data Data Data
1
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
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19
MX29LV800C T/B
WRITE PULSE "GLITCH" PROTECTION
Q3
Sector Erase Timer
Noise pulses of less than 5ns(typical) on CE# or WE#
will not initiate a write cycle.
After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. DATA# polling
and Toggle Bit are valid after the initial sector erase command sequence.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE# = VIL,
CE# = VIH or WE# = VIH. To initiate a write cycle CE#
and WE# must be a logical zero while OE# is a logical
one.
If DATA# polling or the Toggle Bit indicates the device
has been written with a valid erase command, Q3 may
be used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by DATA# polling or
Toggle Bit. If Q3 is low ("0"), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the
second status check, the command may not have been
accepted.
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected between its VCC and GND.
POWER-UP SEQUENCE
The MX29LV800C T/B powers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.
DATA PROTECTION
The MX29LV800C T/B is designed to offer protection
against accidental erasure or programming caused by
spurious system level signals that may exist during power
transition. During power up the device automatically resets the state machine in the Read mode. In addition,
with its control register architecture, alteration of the
memory contents only occurs after successful completion of specific command sequences. The device also
incorporates several features to prevent inadvertent write
cycles resulting from VCC power-up and power-down transition or system noise.
TEMPORARY SECTOR UNPROTECTED
This feature allows temporary unprotected of previously
protected sector to change data in-system. The Temporary Sector Unprotected mode is activated by setting
the RESET# pin to VID(11.5V-12.5V). During this mode,
formerly protected sectors can be programmed or erased
as un-protected sector. Once VID is remove from the
RESET# pin, all the previously protected sectors are
protected again.
LOW VCC WRITE INHIBIT
SECTOR PROTECTION
When VCC is less than VLKO the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the proper
signals to the control pins to prevent unintentional write
when VCC is greater than VLKO.
The MX29LV800C T/B features hardware sector protection. This feature will disable both program and erase
operations for these sectors protected. To activate this
mode, the programming equipment must force VID on
address pin A9 and OE# (suggest VID = 12V). Programming of the protection circuitry begins on the falling
edge of the WE# pulse and is terminated on the rising
edge. Please refer to sector protect algorithm and wave-
P/N:PM1183
REV. 1.4, APR. 24, 2006
20
MX29LV800C T/B
form.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
( with CE# and OE# at VIL and WE# at VIH). When
A1=VIH, A0=VIL, A6=VIL, it will produce a logical "1"
code at device output Q0 for a protected sector. Otherwise the device will produce 00H for the unprotected
sector. In this mode, the addresses, except for A1, are
don't care. Address locations with A1 = VIL are reserved
to read manufacturer and device codes. (Read Silicon
ID)
It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
a logical "1" at Q0 for the protected sector.
CHIP UNPROTECTED
The MX29LV800C T/B also features the chip unprotected
mode, so that all sectors are unprotected after chip unprotected is completed to incorporate any changes in the
code. It is recommended to protect all sectors before
activating chip unprotected mode.
To activate this mode, the programming equipment must
force VID on control pin OE# and address pin A9. The
CE# pins must be set at VIL. Pins A6 must be set to
VIH. Refer to chip unprotected algorithm and waveform
for the chip unprotected algorithm. The unprotection
mechanism begins on the falling edge of the WE# pulse
and is terminated on the rising edge.
It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs (Q0-Q7) for an unprotected sector.
It is noted that all sectors are unprotected after the chip
unprotected algorithm is completed.
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21
MX29LV800C T/B
ABSOLUTE MAXIMUM RATINGS
OPERATING RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Commercial (C) Devices
Ambient Temperature (TA ). . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA ). . . . . . . . . . -40°C to +85°C
VCC Supply Voltages
VCC for regulated voltage range. . . . . . +3.0 V to 3.6 V
VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See
Figure 6. Maximum DC voltage on input or I/O pins is
VCC +0.5 V. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to
20 ns.
2. Minimum DC input voltage on pins A9, OE#, and
RESET# is -0.5 V. During voltage transitions, A9, OE#,
and RESET# may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC input
voltage on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability.
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22
MX29LV800C T/B
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL
PARAMETER
CIN1
MIN.
TYP
MAX.
UNIT
CONDITIONS
Input Capacitance
8
pF
VIN = 0V
CIN2
Control Pin Capacitance
12
pF
VIN = 0V
COUT
Output Capacitance
12
pF
VOUT = 0V
TABLE 9. DC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Symbol
PARAMETER
ILI
MIN.
TYP
MAX.
UNIT
CONDITIONS
Input Leakage Current
±1
uA
VIN = VSS to VCC
ILIT
A9 Input Leakage Current
35
uA
VCC=VCC max; A9=12.5V
ILO
Output Leakage Current
±1
uA
VOUT = VSS to VCC, VCC=VCC max
ICC1
VCC Active Read Current
7
12
mA
CE#=VIL, OE#=VIH @5MHz
2
4
mA
(Byte Mode)
7
12
mA
CE#=VIL, OE#=VIH @5MHz
2
4
mA
(Word Mode)
@1MHz
@1MHz
ICC2
VCC Active write Current
15
30
mA
CE#=VIL, OE#=VIH
ICC3
VCC Standby Current
0.2
5
uA
CE#; RESET#=VCC ± 0.3V
ICC4
VCC Standby Current
0.2
5
uA
RESET#=VSS ± 0.3V
0.2
5
uA
VIH=VCC ± 0.3V; VIL=VSS ± 0.3V
-0.5
0.8
V
0.7xVCC
VCC+ 0.3
V
11.5
12.5
V
VCC=3.3V
0.45
V
IOL = 4.0mA, VCC= VCC min
During Reset
ICC5
Automatic sleep mode
VIL
Input Low Voltage(Note 1)
VIH
Input High Voltage
VID
Voltage for Automatic
Select and Temporary
Sector Unprotected
VOL
Output Low Voltage
VOH1
Output High Voltage(TTL)
VOH2
Output High Voltage
0.85xVCC
IOH = -2mA, VCC=VCC min
VCC-0.4
IOH = -100uA, VCC min
(CMOS)
VLKO
Low VCC Lock-Out Voltage
1.4
2.1
V
(Note 4)
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.
4. Not 100% tested.
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REV. 1.4, APR. 24, 2006
23
MX29LV800C T/B
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V (Restricted VCC=3.0V~3.6V for 45R/55R)
TABLE 10. READ OPERATIONS
Parameter
Speed Options
Std.
Description
45R
55R
70
90
Unit
tRC
Read Cycle Time (Note 1)
MIN.
45
55
70
90
ns
tACC
Address to Output Delay
CE#=OE#=VIL MAX.
45
55
70
90
ns
tCE
CE# to Output Delay
OE#=VIL
MAX.
45
55
70
90
ns
tOE
OE# to Output Delay
CE#=VIL
MAX.
30
30
30
35
ns
tDF
OE# High to Output Float (Note1)
CE#=VIL
MAX.
25
25
25
30
ns
tOEH
Output Enable
Read
MIN.
0
0
0
0
ns
Hold Time
Toggle and Data# Polling
MIN.
10
10
10
10
ns
CE#=OE#=VIL MIN.
0
0
0
0
ns
tOH
Test Setup
Address to Output hold
TEST CONDITIONS:
• Input pulse levels: 0V/3.0V.
• Input rise and fall times is equal to or less than 5ns.
• Output load: 1 TTL gate + 100pF (Including scope and jig), for 29LV800C T/B-90. 1 TTL gate + 30pF (Including scope
and jig) for 29LV800C T/B-70
• Reference levels for measuring timing: 1.5V.
NOTES:
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven.
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REV. 1.4, APR. 24, 2006
24
MX29LV800C T/B
SWITCHING TEST CIRCUITS
DEVICE UNDER
2.7K ohm
+3.3V
TEST
CL
6.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL= 100pF Including jig capacitance
(30pF for MX29LV800CT/CB-70)
SWITCHING TEST WAVEFORMS
3.0V
TEST POINTS
0V
INPUT
OUTPUT
AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.
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REV. 1.4, APR. 24, 2006
25
MX29LV800C T/B
FIGURE 1. READ TIMING WAVEFORMS
tRC
VIH
Addresses
ADD Valid
VIL
tACC
tCE
CE#
VIH
VIL
WE#
VIH
VIL
tOE
tOEH
tDF
VIH
OE#
VIL
tACC
Outputs
VOH
HIGH Z
tOH
DATA Valid
HIGH Z
VOL
VIH
RESET#
VIL
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26
MX29LV800C T/B
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V (Restricted VCC=3.0V~3.6V for 45R/55R)
TABLE 11. Erase/Program Operations
Parameter
Std.
Description
tWC
Write Cycle Time (Note 1)
tAS
Speed Options
45R
55R
70
90
Unit
MIN.
45
55
70
90
ns
Address Setup Time
MIN.
0
0
0
0
ns
tAH
Address Hold Time
MIN.
45
45
45
45
ns
tDS
Data Setup Time
MIN.
35
35
35
45
ns
tDH
Data Hold Time
MIN.
0
0
0
0
ns
tOES
Output Enable Setup Time
MIN.
0
0
0
0
ns
tGHWL
Read Recovery Time Before Write
MIN.
0
0
0
0
ns
(OE# High to WE# Low)
tCS
CE# Setup Time
MIN.
0
0
0
0
ns
tCH
CE# Hold Time
MIN.
0
0
0
0
ns
tWP
Write Pulse Width
MIN.
35
35
35
35
ns
tWPH
Write Pulse Width High
MIN.
30
30
30
30
ns
tWHWH1
Programming Operation (Note 2)
BYTE
TYP.
9
9
9
9
us
(Byte/Word program time)
WORD
TYP.
11
11
11
11
us
tWHWH2
Sector Erase Operation (Note 2)
TYP.
0.7
0.7
0.7
0.7
sec
tVCS
VCC Setup Time (Note 1)
MIN.
50
50
50
50
us
tRB
Recovery Time from RY/BY#
MIN.
0
0
0
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
MAX.
90
90
90
90
ns
tWPP1
Write Pulse Width for Sector Protect
MIN.
100
100
100
100
ns
(A9, OE# Control)
TYP.
10
10
10
10
us
Write Pulse Width for Chip Unprotected
MIN.
100
100
100
100
ns
(A9, OE# Control)
TYP.
12
12
12
12
ms
Sector Address Load Time
MAX.
50
50
50
50
us
tWPP2
tBAL
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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27
MX29LV800C T/B
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V (Restricted VCC=3.0V~3.6V for 45R/55R)
TABLE 12. Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Options
Std.
Description
45R
55R
70
90
Unit
tWC
Write Cycle Time (Note 1)
MIN.
45
55
70
90
ns
tCWC
Command Write Cycle Time
MIN.
45
55
70
90
ns
tAS
Address Setup Time
MIN.
0
0
0
0
ns
tAH
Address Hold Time
MIN.
45
45
45
45
ns
tDS
Data Setup Time
MIN.
35
35
35
45
ns
tDH
Data Hold Time
MIN.
0
0
0
0
ns
tOES
Output Enable Setup Time
MIN.
0
0
0
0
ns
tGHEL
Read Recovery Time Before Write
MIN.
0
0
0
0
ns
tWS
WE# Setup Time
MIN.
0
0
0
0
ns
tWH
WE# Hold Time
MIN.
0
0
0
0
ns
tCP
CE# Pulse Width
MIN.
35
35
35
35
ns
tCPH
CE# Pulse Width High
MIN.
30
30
30
30
ns
tWHWH1
Programming
Byte
TYP.
9
9
9
9
us
Operation(note2)
Word
TYP.
11
11
11
11
us
TYP.
0.7
0.7
0.7
0.7
sec
tWHWH2
Sector Erase Operation (note2)
NOTE:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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28
MX29LV800C T/B
FIGURE 2. COMMAND WRITE TIMING WAVEFORM
VCC
Addresses
3V
VIH
ADD Valid
VIL
tAH
tAS
WE#
VIH
VIL
tOES
tWPH
tWP
tCWC
CE#
VIH
VIL
tCS
OE#
tCH
VIH
VIL
tDS
tDH
VIH
Data
DIN
VIL
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REV. 1.4, APR. 24, 2006
29
MX29LV800C T/B
AUTOMATIC PROGRAMMING TIMING WAVEFORM
ing after automatic programming starts. Device outputs
DATA# during programming and DATA# after programming on Q7. (Q6 is for toggle bit; see toggle bit, DATA#
polling, timing waveform)
One byte data is programmed. Verify in fast algorithm
and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA# polling and toggle bit check-
FIGURE 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM
Program Command Sequence(last two cycle)
tWC
555h
Address
Read Status Data (last two cycle)
tAS
PA
PA
PA
tAH
CE#
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tCS
tWPH
tDS
tDH
A0h
Status
PD
DOUT
Data
tBUSY
tRB
RY/BY#
tVCS
VCC
NOTES:
1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
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REV. 1.4, APR. 24, 2006
30
MX29LV800C T/B
FIGURE 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Data Poll
from system
Increment
Address
No
Verify Word Ok ?
YES
No
Last Address ?
YES
Auto Program Completed
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31
MX29LV800C T/B
FIGURE 5. CE# CONTROLLED PROGRAM TIMING WAVEFORM
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data Polling
Address
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
tWHWH1 or 2
CE#
tCPH
tWS
tDS
tBUSY
tDH
DQ7 DOUT
Data
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
NOTES:
1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device.
2.Figure indicates the last two bus cycles of the command sequence.
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32
MX29LV800C T/B
AUTOMATIC CHIP ERASE TIMING WAVEFORM
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7. (Q6 is for toggle bit; see toggle
bit, DATA# polling, timing waveform)
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be verified by DATA# polling and toggle bit checking after auto-
FIGURE 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
2AAh
Address
Read Status Data
tAS
VA
555h
VA
tAH
CE#
tCH
tGHWL
OE#
tWHWH2
tWP
WE#
tCS
tWPH
tDS
tDH
55h
In
Progress Complete
10h
Data
tBUSY
tRB
RY/BY#
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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MX29LV800C T/B
FIGURE 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Pall from System
NO
Data=FFh ?
YES
Auto Chip Erase Completed
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REV. 1.4, APR. 24, 2006
34
MX29LV800C T/B
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A12 to A18 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure completion can be verified by DATA# polling and toggle bit check-
ing after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7. (Q6 is for toggle
bit; see toggle bit, DATA# polling, timing waveform)
FIGURE 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
Sector
Address 0
2AAh
Address
Read Status Data
tAS
Sector
Address 1
Sector
Address n
VA
VA
tAH
CE#
tCH
tGHWL
OE#
WE#
tCS
tWHWH2
tBAL
tWP
tWPH
tDS tDH
55h
30h
30h
30h
In
Progress Complete
Data
tBUSY
tRB
RY/BY#
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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35
MX29LV800C T/B
FIGURE 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
Last Sector
to Erase
NO
YES
Data Poll from System
Data=FFh
NO
YES
Auto Sector Erase Completed
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36
MX29LV800C T/B
FIGURE 10. ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
ERASE SUSPEND
NO
Toggle Bit checking Q6
not toggled
YES
Read Array or
Program
Reading or
Programming End
NO
YES
Write Data 30H
Delay at least
400us (note)
ERASE RESUME
Continue Erase
Another
Erase Suspend ?
NO
YES
Note: Repeatedly suspending the device more often may have undetermined effects.
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37
MX29LV800C T/B
FIGURE 11. IN-SYSTEM SECTOR PROTECT/UNPROTECTED TIMING WAVEFORM (RESET# Control)
VID
VIH
RESET#
SA, A6
A1, A0
Valid*
Valid*
Sector Protect or Chip Unprotect
Data
60h
1us
60h
Valid*
Verify
40h
Status
Sector Protect =150us
Chip Unprotect =15ms
CE#
WE#
OE#
Note: When sector protect, A6=0, A1=1, A0=0. When chip unprotect, A6=1, A1=1, A0=0.
P/N:PM1183
REV. 1.4, APR. 24, 2006
38
MX29LV800C T/B
FIGURE 12. SECTOR PROTECT TIMING WAVEFORM (A9, OE# Control)
A1
A6
12V
3V
A9
tVLHT
Verify
12V
3V
OE#
tVLHT
tVLHT
tWPP 1
WE#
tOESP
CE#
Data
01H
F0H
tOE
A18-A12
Sector Address
P/N:PM1183
REV. 1.4, APR. 24, 2006
39
MX29LV800C T/B
FIGURE 13. SECTOR PROTECTION ALGORITHM (A9, OE# Control)
START
Set Up Sector Addr
PLSCNT=1
OE#=VID, A9=VID, CE#=VIL
A6=VIL
Activate WE# Pulse
Time Out 150us
Set WE#=VIH, CE#=OE#=VIL
A9 should remain VID
Read from Sector
Addr=SA, A1=1
No
PLSCNT=32?
.
No
Data=01H?
Yes
Device Failed
Protect Another
Sector?
Yes
Remove VID from A9
Write Reset Command
Sector Protection
Complete
P/N:PM1183
REV. 1.4, APR. 24, 2006
40
MX29LV800C T/B
FIGURE 14. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET#=VID
START
PLSCNT=1
RESET#=VID
Wait 1us
First Write
Cycle=60H
No
Temporary Sector
Unprotect Mode
Yes
Set up sector address
Write 60H to sector address
with A6=0, A1=1, A0=0
Wait 150us
Verify sector protect :
write 40H with A6=0,
A1=1, A0=0
Increment PLSCNT
Reset PLSCNT=1
Read from sector address
No
PLSCNT=25?
Yes
Device failed
No
Data=01H ?
Yes
Protect another
sector?
Yes
No
Remove VID from RESET#
Write reset command
Sector protect complete
P/N:PM1183
REV. 1.4, APR. 24, 2006
41
MX29LV800C T/B
FIGURE 15. IN-SYSTEM CHIP UNPROTECTION ALGORITHM WITH RESET#=VID
START
PLSCNT=1
RESET#=VID
Wait 1us
First Write
Cycle=60H ?
No
Temporary Sector
Unprotect Mode
Yes
All sector
protected?
No
Protect all sectors
Yes
Set up first sector address
Chip unprotect :
write 60H with
A6=1, A1=1, A0=0
Wait 50ms
Verify chip unprotect
write 40H to sector address
with A6=1, A1=1, A0=0
Increment PLSCNT
Read from sector address
with A6=1, A1=1, A0=0
No
PLSCNT=1000?
Yes
Device failed
No
Set up next sector address
Data=00H ?
Yes
Last sector
verified?
Yes
No
Remove VID from RESET#
Write reset command
Chip unprotect complete
P/N:PM1183
REV. 1.4, APR. 24, 2006
42
MX29LV800C T/B
FIGURE 16. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE# Control)
A1
12V
Vcc 3V
A9
tVLHT
A6
Verify
12V
Vcc 3V
OE#
tVLHT
tVLHT
time out 50ms
tWPP 2
WE#
tOESP
CE#
Data
00H
F0H
tOE
A18-A12
Sector Address
Notes: tVLHT (Voltage transition time)=4us min.
tWPP1 (Write pulse width for sector protect)=100ns min, 10us(Typ.)
tWPP2 (Write pulse width for chip unprotected)=100ns min, 12ms(Typ.)
tOESP (OE# setup time to WE# active)=4us min.
P/N:PM1183
REV. 1.4, APR. 24, 2006
43
MX29LV800C T/B
FIGURE 17. CHIP UNPROTECTION ALGORITHM (A9, OE# Control)
START
Protect All Sectors
PLSCNT=1
Set OE#=A9=VID
CE#=VIL,A6=1
Activate WE# Pulse
Time Out 50ms
Increment
PLSCNT
Set OE#=CE#=VIL
A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device
No
Data=00H?
Increment
Sector Addr
No
PLSCNT=1000?
Yes
Yes
No
All sectors have
been verified?
Device Failed
Yes
Remove VID from A9
Write Reset Command
Chip Unprotect
Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
P/N:PM1183
REV. 1.4, APR. 24, 2006
44
MX29LV800C T/B
WRITE OPERATION STATUS
FIGURE 18. DATA# POLLING ALGORITHM
Start
Read Q7~Q0
Add.=VA(1)
Yes
Q7 = Data ?
No
No
Q5 = 1 ?
Yes
Read Q7~Q0
Add.=VA
Yes
Q7 = Data ?
(2)
No
FAIL
Pass
NOTE : 1.VA=Valid address for programming
2.Q7 should be re-checked even Q5="1" because Q7 may change
simultaneously with Q5.
P/N:PM1183
REV. 1.4, APR. 24, 2006
45
MX29LV800C T/B
FIGURE 19. TOGGLE BIT ALGORITHM
Start
Read Q7-Q0
Read Q7-Q0
Toggle Bit Q6 =
Toggle ?
(Note 1)
NO
YES
NO
Q5= 1?
YES
Read Q7~Q0 Twice
(Note 1,2)
Toggle bit Q6=
Toggle?
NO
YES
Program/Erase Operation
Not Complete,Write
Reset Command
Program/Erase
operation Complete
Note:1.Read toggle bit twice to determine whether or not it is toggling.
2. Recheck toggle bit because it may stop toggling as Q5 change to "1".
P/N:PM1183
REV. 1.4, APR. 24, 2006
46
MX29LV800C T/B
FIGURE 20. DATA# Polling Timings (During Automatic Algorithms)
tRC
Address
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
DQ7
Complement
Complement
True
Valid Data
Q0-Q6
Status Data
Status Data
True
Valid Data
High Z
High Z
tBUSY
RY/BY#
NOTES:
1. VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.
2. CE# must be toggled when DATA# polling.
P/N:PM1183
REV. 1.4, APR. 24, 2006
47
MX29LV800C T/B
FIGURE 21. Toggle Bit Timings (During Automatic Algorithms)
tRC
VA
VA
Address
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tDF
tOEH
WE#
tOH
High Z
Q6/Q2
Valid Status
(first read)
Valid Status
Valid Data
(second read)
(stops toggling)
Valid Data
tBUSY
RY/BY#
NOTES:
1. VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.
2. CE# must be toggled when toggle bit toggling.
P/N:PM1183
REV. 1.4, APR. 24, 2006
48
MX29LV800C T/B
TABLE 13. AC CHARACTERISTICS
Parameter Std
Description
Test Setup All Speed Options Unit
tREADY1
RESET# PIN Low (During Automatic Algorithms)
MAX
20
us
MAX
500
ns
to Read or Write (See Note)
tREADY2
RESET# PIN Low (NOT During Automatic
Algorithms) to Read or Write (See Note)
tRP
RESET# Pulse Width (During Automatic Algorithms)
MIN
500
ns
tRH
RESET# High Time Before Read (See Note)
MIN
50
ns
tRB
RY/BY# Recovery Time (to CE#, OE# go low)
MIN
0
ns
Note: Not 100% tested
FIGURE 22. RESET# TIMING WAVEFORM
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tREADY2
Reset Timing NOT during Automatic Algorithms
tREADY1
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Reset Timing during Automatic Algorithms
P/N:PM1183
REV. 1.4, APR. 24, 2006
49
MX29LV800C T/B
AC CHARACTERISTICS
TABLE 14. WORD/BYTE CONFIGURATION (BYTE#)
Parameter
JEDEC
Description
Speed Options
Std
-45R -55R
-70
Unit
-90
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
5
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
25
25
25
30
ns
tFHQV
BYTE# Switching High to Output Active
Min
45
55
70
90
ns
FIGURE 23. BYTE# TIMING WAVEFORM FOR READ OPERATIONS (BYTE# switching from byte mode to word
mode)
CE#
OE#
tELFH
BYTE#
Q0~Q14
DOUT
(Q0-Q7)
Q15/A-1
VA
DOUT
(Q0-Q14)
DOUT
(Q15)
tFHQV
P/N:PM1183
REV. 1.4, APR. 24, 2006
50
MX29LV800C T/B
FIGURE 24. BYTE# TIMING WAVEFORM FOR READ OPERATIONS (BYTE# switching from word mode to byte
mode)
CE#
OE#
tELFH
BYTE#
DOUT
(Q0-Q14)
Q0~Q14
DOUT
(Q15)
Q15/A-1
DOUT
(Q0-Q7)
VA
tFLQZ
FIGURE 25. BYTE# TIMING WAVEFORM FOR PROGRAM OPERATIONS
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tAS
P/N:PM1183
tAH
REV. 1.4, APR. 24, 2006
51
MX29LV800C T/B
TABLE 15. TEMPORARY SECTOR UNPROTECTED
Parameter Std. Description
Test Setup All Speed Options Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector Unprotected
Min
4
us
Note:
Not 100% tested
FIGURE 26. TEMPORARY SECTOR UNPROTECTED TIMING DIAGRAM
12V
RESET#
0 or Vcc
0 or Vcc
Program or Erase Command Sequence
tVIDR
tVIDR
CE#
WE#
tRSP
RY/BY#
FIGURE 27. Q6 vs Q2 for Erase and Erase Suspend Operations
Enter Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
WE#
Erase
Resume
Erase
Suspend
Program
Erase Suspend
Read
Erase
Erase
Complete
Q6
Q2
NOTES:
The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
P/N:PM1183
REV. 1.4, APR. 24, 2006
52
MX29LV800C T/B
FIGURE 28. TEMPORARY SECTOR UNPROTECTED ALGORITHM
Start
RESET# = VID (Note 1)
Perform Erase or Program Operation
Operation Completed
RESET# = VIH
Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V
2. All previously protected sectors are protected again.
P/N:PM1183
REV. 1.4, APR. 24, 2006
53
MX29LV800C T/B
FIGURE 29. ID CODE READ TIMING WAVEFORM
VCC
3V
ADD
VID
VIH
A9
VIL
ADD
A0
VIH
VIL
tACC
tACC
VIH
A1
VIL
ADD
A2-A8
A10-A18
CE#
VIH
VIL
VIH
VIL
WE#
VIH
tCE
VIL
OE#
VIH
tOE
VIL
tDF
tOH
tOH
VIH
DATA
Q0-Q15
DATA OUT
DATA OUT
VIL
DAH/5BH (Byte)
C2H/00C2H
22DAH/225BH (Word)
P/N:PM1183
REV. 1.4, APR. 24, 2006
54
MX29LV800C T/B
RECOMMENDED OPERATING CONDITIONS
At Device Power-Up
AC timing illustrated in Figure A is recommended for the supply voltages and the control signals at device power-up.
If the timing in the figure is ignored, the device may not operate correctly.
VCC(min)
VCC
GND
tVR
tACC
tR or tF
VIH
ADDRESS
tR or tF
Valid
Address
VIL
tF
tCE
tR
VIH
CE#
VIL
VIH
WE#
VIL
tF
tOE
tR
VIH
OE#
VIL
VIH
WP#/ACC
VIL
VOH
DATA
High Z
Valid
Ouput
VOL
Figure A. AC Timing at Device Power-Up
Symbol
Parameter
tVR
VCC Rise Time
tR
Input Signal Rise Time
tF
Input Signal Fall Time
Notes
Min.
Max.
Unit
1
20
500000
us/V
1,2
20
us/V
1,2
20
us/V
Notes :
1. Sampled, not 100% tested.
2. This specification is applied for not only the device power-up but also the normal operations.
P/N:PM1183
REV. 1.4, APR. 24, 2006
55
MX29LV800C T/B
ERASE AND PROGRAMMING PERFORMANCE (1)
LIMITS
TYP.(2)
MAX.(3)
UNITS
Sector Erase Time
0.7
15
sec
Chip Erase Time
14
Byte Programming Time
9
300
us
Word Programming Time
11
360
us
Byte Mode
9
27
sec
Word Mode
5.8
17
sec
PARAMETER
Chip Programming Time
MIN.
Erase/Program Cycles
Note:
sec
100,000
Cycles
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25°C, 3V.
3. Maximum values measured at 25°C, 2.7V.
LATCH-UP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on OE#, RESET#, A9
-1.0V
12.5V
Input Voltage with respect to GND on all power pins, Address pins, CE# and WE#
-1.0V
VCC + 1.0V
Input Voltage with respect to GND on all I/O pins
-1.0V
VCC + 1.0V
-100mA
+100mA
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N:PM1183
REV. 1.4, APR. 24, 2006
56
MX29LV800C T/B
ORDERING INFORMATION
PART NO.
ACCESS
TIME (ns)
MX29LV800CTMC-55R
55
MX29LV800CBMC-55R
55
MX29LV800CTMC-70
70
MX29LV800CBMC-70
70
MX29LV800CTMC-90
90
MX29LV800CBMC-90
90
MX29LV800CTTC-55R
55
OPERATING
Current MAX. (mA)
30
30
30
30
30
30
30
STANDBY
Current MAX. (uA)
5
5
5
5
5
5
5
MX29LV800CBTC-55R
55
30
5
MX29LV800CTTC-70
70
30
5
MX29LV800CBTC-70
70
30
5
MX29LV800CTTC-90
90
30
5
MX29LV800CBTC-90
90
30
5
MX29LV800CTXBC-55R
55
30
5
MX29LV800CBXBC-55R
55
30
5
MX29LV800CTXBC-70
70
30
5
MX29LV800CBXBC-70
70
30
5
MX29LV800CTXBC-90
90
30
5
MX29LV800CBXBC-90
90
30
5
MX29LV800CTMI-55R
MX29LV800CBMI-55R
MX29LV800CTMI-70
MX29LV800CBMI-70
MX29LV800CTMI-90
MX29LV800CBMI-90
MX29LV800CTTI-55R
55
55
70
70
90
90
55
30
30
30
30
30
30
30
5
5
5
5
5
5
5
MX29LV800CBTI-55R
55
30
5
MX29LV800CTTI-70
70
30
5
MX29LV800CBTI-70
70
30
5
P/N:PM1183
PACKAGE
Remark
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
REV. 1.4, APR. 24, 2006
57
MX29LV800C T/B
PART NO.
MX29LV800CTTI-90
ACCESS
TIME (ns)
90
OPERATING
Current MAX. (mA)
30
STANDBY
Current MAX. (uA)
5
MX29LV800CBTI-90
90
30
5
MX29LV800CTXBI-55R
55
30
5
MX29LV800CBXBI-55R
55
30
5
MX29LV800CTXBI-70
70
30
5
MX29LV800CBXBI-70
70
30
5
MX29LV800CTXBI-90
90
30
5
MX29LV800CBXBI-90
90
30
5
MX29LV800CTXEC-55R
55
30
5
MX29LV800CBXEC-55R
55
30
5
MX29LV800CTXEC-70
70
30
5
MX29LV800CBXEC-70
70
30
5
MX29LV800CTXEC-90
90
30
5
MX29LV800CBXEC-90
90
30
5
MX29LV800CTXEI-55R
55
30
5
MX29LV800CBXEI-55R
55
30
5
MX29LV800CTXEI-70
70
30
5
MX29LV800CBXEI-70
70
30
5
MX29LV800CTXEI-90
90
30
5
MX29LV800CBXEI-90
90
30
5
MX29LV800CTMC-55Q
MX29LV800CBMC-55Q
MX29LV800CTMC-70G
MX29LV800CBMC-70G
55
55
70
70
30
30
30
30
5
5
5
5
P/N:PM1183
PACKAGE
Remark
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
PB free
PB free
PB free
PB free
REV. 1.4, APR. 24, 2006
58
MX29LV800C T/B
PART NO.
ACCESS
TIME (ns)
MX29LV800CTMC-90G
90
MX29LV800CBMC-90G
90
MX29LV800CTTC-55Q
55
OPERATING
Current MAX. (mA)
30
30
30
STANDBY
Current MAX. (uA)
5
5
5
MX29LV800CBTC-55Q
55
30
5
MX29LV800CTTC-70G
70
30
5
MX29LV800CBTC-70G
70
30
5
MX29LV800CTTC-90G
90
30
5
MX29LV800CBTC-90G
90
30
5
MX29LV800CTXBC-55Q
55
30
5
MX29LV800CBXBC-55Q
55
30
5
MX29LV800CTXBC-70G
70
30
5
MX29LV800CBXBC-70G
70
30
5
MX29LV800CTXBC-90G
90
30
5
MX29LV800CBXBC-90G
90
30
5
MX29LV800CTMI-55Q
MX29LV800CBMI-55Q
MX29LV800CTMI-70G
MX29LV800CBMI-70G
MX29LV800CTMI-90G
MX29LV800CBMI-90G
MX29LV800CTTI-55Q
55
55
70
70
90
90
55
30
30
30
30
30
30
30
5
5
5
5
5
5
5
MX29LV800CBTI-55Q
55
30
5
MX29LV800CTTI-70G
70
30
5
MX29LV800CBTI-70G
70
30
5
MX29LV800CTTI-90G
90
30
5
MX29LV800CBTI-90G
90
30
5
MX29LV800CTXBI-55Q
55
30
5
P/N:PM1183
PACKAGE
Remark
44 Pin SOP
44 Pin SOP
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Ball CSP
(Ball Size:0.3mm)
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
REV. 1.4, APR. 24, 2006
59
MX29LV800C T/B
PART NO.
ACCESS
TIME (ns)
MX29LV800CBXBI-55Q
55
OPERATING
Current MAX. (mA)
30
STANDBY
Current MAX. (uA)
5
MX29LV800CTXBI-70G
70
30
5
MX29LV800CBXBI-70G
70
30
5
MX29LV800CTXBI-90G
90
30
5
MX29LV800CBXBI-90G
90
30
5
MX29LV800CTXEC-55Q
55
30
5
MX29LV800CBXEC-55Q
55
30
5
MX29LV800CTXEC-70G
70
30
5
MX29LV800CBXEC-70G
70
30
5
MX29LV800CTXEC-90G
90
30
5
MX29LV800CBXEC-90G
90
30
5
MX29LV800CTXEI-55Q
55
30
5
MX29LV800CBXEI-55Q
55
30
5
MX29LV800CTXEI-70G
70
30
5
MX29LV800CBXEI-70G
70
30
5
MX29LV800CTXEI-90G
90
30
5
MX29LV800CBXEI-90G
90
30
5
MX29LV800CTTI-45Q
45
30
5
MX29LV800CBTI-45Q
45
30
5
MX29LV800CTXBI-45Q
45
30
5
MX29LV800CBXBI-45Q
45
30
5
MX29LV800CTXEI-45Q
45
30
5
MX29LV800CBXEI-45Q
45
30
5
P/N:PM1183
PACKAGE
Remark
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.3mm)
48 Ball CSP
(Ball Size:0.4mm)
48 Ball CSP
(Ball Size:0.4mm)
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
REV. 1.4, APR. 24, 2006
60
MX29LV800C T/B
PART NO.
ACCESS
TIME (ns)
MX29LV800CTXHC-55R
55
OPERATING
Current MAX. (mA)
30
STANDBY
Current MAX. (uA)
5
MX29LV800CBXHC-55R
55
30
5
MX29LV800CTXHC-70
70
30
5
MX29LV800CBXHC-70
70
30
5
MX29LV800CTXHC-90
90
30
5
MX29LV800CBXHC-90
90
30
5
MX29LV800CTXHI-55R
55
30
5
MX29LV800CBXHI-55R
55
30
5
MX29LV800CTXHI-70
70
30
5
MX29LV800CBXHI-70
70
30
5
MX29LV800CTXHI-90
90
30
5
MX29LV800CBXHI-90
90
30
5
MX29LV800CTXHC-55Q
55
30
5
MX29LV800CBXHC-55Q
55
30
5
MX29LV800CTXHC-70G
70
30
5
MX29LV800CBXHC-70G
70
30
5
MX29LV800CTXHC-90G
90
30
5
MX29LV800CBXHC-90G
90
30
5
MX29LV800CTXHI-55Q
55
30
5
MX29LV800CBXHI-55Q
55
30
5
MX29LV800CTXHI-70G
70
30
5
MX29LV800CBXHI-70G
70
30
5
MX29LV800CTXHI-90G
90
30
5
MX29LV800CBXHI-90G
90
30
5
P/N:PM1183
PACKAGE
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
48 Ball CSP
(4 x 6 mm)
Remark
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
PB free
REV. 1.4, APR. 24, 2006
61
MX29LV800C T/B
PART NAME DESCRIPTION
MX 29
LV 800 C T T C
70 G
OPTION:
G: Lead-free package
R: Restricted VCC (3.0V~3.6V)
Q: Restricted VCC (3.0V~3.6V) with Lead-free package
blank: normal
SPEED:
45: 45ns
55: 55ns
70: 70ns
90: 90ns
TEMPERATURE RANGE:
C: Commercial (0˚C to 70˚C)
I: Industrial (-40˚C to 85˚C)
PACKAGE:
M: SOP
T: TSOP
X: FBGA (CSP)
XB - 0.3mm Ball (6x8mm)
XE - 0.4mm Ball (6x8mm)
XH - 0.32mm Ball (4x6mm)
BOOT BLOCK TYPE:
T: Top Boot
B: Bottom Boot
REVISION:
C
DENSITY & MODE:
800: 8M, x8/x16 Boot Block
TYPE:
L, LV: 3V
DEVICE:
28, 29:Flash
P/N:PM1183
REV. 1.4, APR. 24, 2006
62
MX29LV800C T/B
PACKAGE INFORMATION
P/N:PM1183
REV. 1.4, APR. 24, 2006
63
MX29LV800C T/B
P/N:PM1183
REV. 1.4, APR. 24, 2006
64
MX29LV800C T/B
48-Ball CSP (for MX29LV800CTXBC/BTXBI/BBXBC/BBXBI)
P/N:PM1183
REV. 1.4, APR. 24, 2006
65
MX29LV800C T/B
48-Ball CSP (for MX29LV800CTXEC/BTXEI/BBXEC/BBXEI)
P/N:PM1183
REV. 1.4, APR. 24, 2006
66
MX29LV800C T/B
48-Ball CSP (for MX29LV800CTXHC/BTXHI/BBXHC/BBXHI)
Title: Package Outline for CSP 48BALL(4x6x1.0MM, BALL PITCH 0.5MM, BALL DIAMETER 0.32MM)
TOP VIEW
BOTTOM VIEW
6.00 ± 0.08
5.00
0.50
6
5
4
3
2
1
4.00 ± 0.08
6
5
4
3
2
1
2.50
0.50
A B C D E F G H J K L
0.32 ± 0.05
(48X)
L K J H G F E D C B A
4
A1 CORNER
A1 INDICATOR
DETAIL
0.63 ± 0.10
SIDE VIEW
0.08
SEATING PLANE
0.20 ± 0.06
Note:
1. Although many dimensions are similar to those of JEDEC Publication 95, MO-225, this specific package is not registered.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.08 mm
P/N:PM1183
REV. 1.4, APR. 24, 2006
67
MX29LV800C T/B
REVISION HISTORY
Revision No. Description
1.0
1. Removed "Preliminary"
1.1
1. Added Pb-free package information for 44-SOP
2. Added "Recommended Operating Conditions"
1.2
1. Modified Erase Resume from delay 10ms to delay 400us
2. Added tCWC in table 12
1.3
1. Added access time:45Rns
1.4
1. Added 48-CSP(4x6mm) package
2. Added VLKO description
P/N:PM1183
Page
P1
P57
P54
P16,37
P28
All
P1,3,61,67
P20,23
Date
MAY/12/2005
JUL/22/2005
JAN/12/2006
MAR/03/2006
APR/24/2006
REV. 1.4, APR. 24, 2006
68
MX29LV800C T/B
MACRONIX INTERNATIONAL CO., LTD.
Headquarters:
TEL:+886-3-578-6688
FAX:+886-3-563-2888
Europe Office :
TEL:+32-2-456-8020
FAX:+32-2-456-8021
Hong Kong Office :
TEL:+86-755-834-335-79
FAX:+86-755-834-380-78
Japan Office :
Kawasaki Office :
TEL:+81-44-246-9100
FAX:+81-44-246-9105
Osaka Office :
TEL:+81-6-4807-5460
FAX:+81-6-4807-5461
Singapore Office :
TEL:+65-6346-5505
FAX:+65-6348-8096
Taipei Office :
TEL:+886-2-2509-3300
FAX:+886-2-2509-2200
MACRONIX AMERICA, INC.
TEL:+1-408-262-8887
FAX:+1-408-262-8810
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.