BB 640 Silicon Variable Capacitance Diode ● BB 640 For Hyperband TV/VTR tuners, Bd I Type Ordering Code (tape and reel) Pin Configuration Marking 1 2 Package BB 640 Q62702-B589 C red S SOD-323 A Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30 V Reverse voltage (R ≥ 5 kΩ) VRM 35 Forward current IF 20 Operating temperature range Top – 55 … + 150 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient Semiconductor Group 1 450 K/W 02.96 BB 640 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Reverse current VR = 30 V VR = 30 V, TA = 85 ˚C IR Diode capacitance, f = 1 MHz VR = 1 V VR = 28 V CT Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Values Unit min. typ. max. – – – – 10 200 nA pF 62 2.9 – – 76 3.4 CT1 CT28 19.5 – 25 – Capacitance matching VR = 1 V … 28 V, f = 1 MHz ∆CT – – 2.5 % Series resistance CT = 30 pF, f = 100 MHz rs – 1.15 – Ω Series inductance LS – 2 – nH CT Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2