New Product BU1506 thru BU1510 Vishay General Semiconductor Enhanced PowerBridge® Rectifiers FEATURES • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PowerBridge® ~ ~ - + Case Style BU + ~ ~ ~ ~ + - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. Epoxy meets UL 94 V-0 flammability rating. MECHANICAL DATA Case: BU Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) PRIMARY CHARACTERISTICS IF(AV) 15 A VRRM 600 V, 800 V, 1000 V IFSM 200 A IR 5 µA VF at IF = 7.5 A 0.87 V TJ max. 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage SYMBOL BU1506 BU1508 BU1510 UNIT VRRM 600 800 1000 V (1) Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range TC = 80 °C TA = 25 °C (2) IO 15 3.4 A IFSM 200 A I2 t 160 A 2s TJ, TSTG - 55 to + 150 °C Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air www.vishay.com For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number: 89297 Revision: 15-Mar-11 New Product BU1506 thru BU1510 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward voltage per diode (1) IF = 7.5 A TA = 25 °C TA = 125 °C VF 0.97 0.87 1.05 0.95 V Maximum reverse current per diode rated VR TA = 25 °C TA = 125 °C IR 90 5.0 250 µA Typical junction capacitance per diode 4.0 V, 1 MHz CJ 70 - pF Note (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BU1506 BU1508 (1) RJC RJA (2) Typical thermal resistance BU1510 UNIT 2.5 20 °C/W Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BU1506-M3/45 4.75 45 20 Tube BU1506-M3/51 4.75 51 250 Paper tray BU15065S-M3/45 4.75 45 20 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 5 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom 15 10 TC TC 5 0 Average Forward Rectified Current (A) Average Forward Output Current (A) 20 4 3 2 Without Heatsink Sine-Wave, R-Load Free Air, TA 1 0 0 25 50 75 100 125 150 0 25 50 75 100 125 Case Temperature (°C) Ambient Temperature (°C) Figure 1. Derating Curve Output Rectified Current Figure 2. Forward Current Derating Curve 150 Document Number: 89297 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 [email protected], [email protected], [email protected] This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 New Product BU1506 thru BU1510 Vishay General Semiconductor 1000 Instantaneous Reverse Current (µA) Forward Power Dissipation (W) 36 32 28 24 20 16 12 8 4 0 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0 2 4 6 8 10 12 14 16 18 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Figure 3. Forward Power Dissipation Figure 5. Typical Reverse Characteristics Per Diode 1000 100 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) TJ = 150 °C 100 10 TJ = 125 °C 1 TJ = 25 °C 0.1 0.01 0.3 100 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode www.vishay.com For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number: 89297 Revision: 15-Mar-11 New Product BU1506 thru BU1510 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type BU 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) View A 0.020R (TYP.) 0.125 (3.2) x 45° Chamfer 0.080 (2.03) 0.060 (1.52) 0.310 (7.9) 0.290 (7.4) 0.160 (4.1) 0.140 (3.5) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R + 9° TYP. ~ ~ 0.085 (2.16) 0.065 (1.65) - 5° TYP. 0.048 (1.23) 0.039 (1.00) 0.710 (18.0) 0.690 (17.5) 0.050 (1.27) 0.040 (1.02) 0.100 (2.54) 0.085 (2.16) 0.190 (4.83) 0.210 (5.33) 0.028 (0.72) 0.020 (0.52) 0.080 (2.03) 0.065 (1.65) Polarity shown on front side of case, positive lead beveled corner 0.055 (1.385) REF. 0.094 (2.39) x 45° REF. R 0.11 (2.78) REF. 0.64 (16.28) REF. 0.62 (15.78) REF. R 0.10 (2.60) REF. 0.055 (1.385) REF. Document Number: 89297 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 [email protected], [email protected], [email protected] This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 4 New Product BU1506 thru BU1510 Vishay General Semiconductor FORMING SPECIFICATION: BU-5S in inches (millimeters) 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) 0.080 (2.03) 0.060 (1.52) 0.050 (1.27) 0.040 (1.02) 0.213 (5.40) 0.173 (4.40) 0.417 (10.60) 0.370 (9.40) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R + 9° TYP. 0.020R (TYP.) ~ ~ - 0.085 (2.16) 0.065 (1.65) 0.100 (2.54) 0.085 (2.16) 5° TYP. 0.219 (5.55) MAX. 0.315 (8.0) 0.276 (7.0) 0.134 (3.40) 0.087 (2.20) 0.080 (2.03) 0.065 (1.65) 0.319 (8.10) 0.272 (6.90) 0.319 (8.10) 0.272 (6.90) 0.028 (0.72) 0.020 (0.52) APPLICATION NOTE (1) Device UL approved for safety use dielectric strength of 1500 V. (2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. (3) Heat sink shape recommendation: (3) 2.5 mm MIN. Heatsink 2.5 mm MIN. By Safety Requirements www.vishay.com For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number: 89297 Revision: 15-Mar-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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