MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 3 2.6 ± 0.2 2 3 1 • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diode (TYP.) .........100ns • Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 1 GATE 2 DRAIN 3 SOURCE 1 2 TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Conditions VGS = 0V VDS = 0V Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value Ratings Unit –150 ±20 V V –20 –80 –20 –20 –80 30 A A A A A W –55 ~ +150 –55 ~ +150 2000 °C °C V 2.0 g Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-3 P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –150V, VGS = 0V –150 — — — — — — ±0.1 –0.1 V µA mA ID = –1mA, VDS = –10V ID = –10A, VGS = –10V ID = –10A, VGS = –4V ID = –10A, VGS = –10V ID = –10A, VDS = –10V –1.0 — — — –1.5 0.23 0.25 –2.3 –2.0 0.29 0.32 –2.9 V Ω Ω V — — — — 17.5 4470 248 115 — — — — S pF pF pF — — — — 15 42 273 114 — — — — ns ns ns ns — –1.0 –1.5 V — — — 100 4.17 — °C/W ns VDS = –10V, VGS = 0V, f = 1MHz VDD = –80V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω IS = –10A, VGS = 0V Channel to case Thermal resistance Reverse recovery time Unit Min. IS = –20A, dis/dt = 100A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) –102 32 24 16 8 0 0 –20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 50 100 150 –7 –5 –3 –2 tw = 10µs –101 100µs –7 –5 –3 –2 1ms –100 10ms –7 –5 DC TC = 25°C –3 Single Pulse –2 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = –10V –8V –6V –4V –16 –10 TC = 25°C Pulse Test –12 –3V –8 –2.5V –4 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 40 VGS = –10V –8V –8 TC = 25°C –6V –4V –3V Pulse Test –6 PD = 30W –2.5V –4 –2 PD = 30W 0 0 –2 –4 –6 –8 –10 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-3 P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ID = –30A –8 –6 –20A –4 –10A –2 0 0 –50 –2 –4 –6 –8 0.4 VGS = –4V –10V 0.3 0.2 0.1 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 TC = 25°C VDS = –10V Pulse Test –40 TC = 25°C Pulse Test 0 0 –10 –10 VDS = –10V 7 Pulse Test 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 0.5 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –10 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) –30 –20 –10 TC = 25°C 75°C 125°C 3 2 101 7 5 3 2 0 0 –2 –4 –6 –8 100 0 –10 –10 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 103 7 5 3 2 103 7 5 3 2 Coss 102 7 5 Crss 3 TCh = 25°C 2 f = 1MHZ VGS = 0V 101 0 –10 –2 –3 TCh = 25°C VDD = –80V VGS = –10V RGEN = RGS = 50Ω 7 5 Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) –2 –3 3 td(off) 2 tf 102 7 5 tr 3 td(on) 2 –5 –7 –101 –2 –3 –5 –7 –102 DRAIN-SOURCE VOLTAGE VDS (V) 101 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 DRAIN CURRENT ID (A) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-3 P HIGH-SPEED SWITCHING USE –10 SOURCE CURRENT IS (A) VDS = –50V –80V –100V –6 –4 –2 0 20 40 60 80 –8 –4 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 3 2 100 7 5 3 2 –50 0 50 100 –2.4 –1.6 –0.8 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = –10V ID = –1mA –3.2 CHANNEL TEMPERATURE Tch (°C) 0.4 0 GATE CHARGE Qg (nC) VGS = –10V 7 ID = 1/2ID 5 Pulse Test 1.4 TC = 125°C 75°C 25°C –12 0 101 10–1 TC = 25°C Pulse Test –16 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) –20 TCh = 25°C ID = –20A –8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 0 0.2 10 7 0.1 5 3 2 10–1 7 5 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 3 2 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999